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11 Jun 2012

Volume 100, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 241101 (2012); http://dx.doi.org/10.1063/1.4724309 (3 pages)

Miriam S. Vitiello, Leonardo Viti, Lorenzo Romeo, Daniele Ercolani, G. Scalari, J. Faist, F. Beltram, L. Sorba, and A. Tredicucci
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Analysis of electronic carrier traps in Cr-SrTiO3-based charge trap flash memory devices

Yujeong Seo, Min Yeong Song, Soyun Park, and Tae Geun Kim

Appl. Phys. Lett. 100, 243501 (2012); http://dx.doi.org/10.1063/1.4729127 (4 pages) | Cited 1 time

Online Publication Date: 12 June 2012

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We investigated the deep-level traps formed in Cr-SrTiO3/Si3N4/SiO2 structures deposited on n-type Si by deep-level transient spectroscopy (DLTS). Three electron traps, with averaged activation energies of 0.24, 0.28, and 0.53 eV, were observed below the conduction band minimum of Si. Different behaviors in the dependence of DLTS on both filling bias and pulse confirm that the traps originate as the Si3N4 bulk trap, the Si3N4/SiO2 interfacial trap, and the Si/SiO2 interfacial trap. We also demonstrate that a specific point defect is the source of memory behavior in Cr-SrTiO3-based fusion-type charge trap flash (CTF) memory devices.
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84.30.Sk Pulse and digital circuits

Electromagnetic hydrophone with tomographic system for absolute velocity field mapping

Pol Grasland-Mongrain, Jean-Martial Mari, Bruno Gilles, Jean-Yves Chapelon, and Cyril Lafon

Appl. Phys. Lett. 100, 243502 (2012); http://dx.doi.org/10.1063/1.4726178 (4 pages) | Cited 1 time

Online Publication Date: 12 June 2012

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The velocity and pressure of an ultrasonic wave can be measured by an electromagnetic hydrophone made of a thin wire and a magnet. The ultrasonic wave vibrates the wire inside a magnetic field, inducing an electrical current. Previous articles reported poor spatial resolution of comparable hydrophones along the axis of the wire. In this study, submillimetric spatial resolution has been achieved by using a tomographic method. Moreover, a physical model is presented for obtaining absolute measurements. A pressure differential of 8% has been found between piezoelectric and electromagnetic hydrophone measurements. These characteristics show this technique as an alternative to standard hydrophones.
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43.58.Dj Sound velocity
43.30.Es Velocity, attenuation, refraction, and diffraction in water, Doppler effect
43.30.Yj Transducers and transducer arrays for underwater sound; transducer calibration

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette di Forte-Poisson, Jean-Claude De Jaeger, and Abdallah Ougazzaden

Appl. Phys. Lett. 100, 243503 (2012); http://dx.doi.org/10.1063/1.4729154 (4 pages) | Cited 1 time

Online Publication Date: 13 June 2012

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A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed.
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85.30.Tv Field effect devices

Extremely low-loss acoustic phonons in a quartz bulk acoustic wave resonator at millikelvin temperature

Maxim Goryachev, Daniel L. Creedon, Eugene N. Ivanov, Serge Galliou, Roger Bourquin, and Michael E. Tobar

Appl. Phys. Lett. 100, 243504 (2012); http://dx.doi.org/10.1063/1.4729292 (4 pages) | Cited 2 times

Online Publication Date: 13 June 2012

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Low-loss, high frequency acoustic resonators cooled to millikelvin temperatures are a topic of great interest for application to hybrid quantum systems. When cooled to 20 mK, we show that resonant acoustic phonon modes in a bulk acoustic wave quartz resonator demonstrate exceptionally low loss (with Q-factors of order billions) at frequencies of 15.6 and 65.4 MHz, with a maximum f · Q product of 7.8 × 1016 Hz. Given this result, we show that the Q-factor in such devices near the quantum ground state can be four orders of magnitude better than previously attained. Such resonators possess the low losses crucial for electromagnetic cooling to the phonon ground state, and the possibility of long coherence and interaction times of a few seconds, allowing multiple quantum gate operations.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Qingyu Xu, Huiling Ou, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 100, 243505 (2012); http://dx.doi.org/10.1063/1.4729478 (4 pages) | Cited 2 times

Online Publication Date: 14 June 2012

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The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold swing (SS) is observed when the illumination wavelength is below 625 nm (∼2.0 eV). The SS degradation is accompanied by a simultaneous increase of the field effect mobility (μFE) of the TFT, which then decreases at even shorter wavelength beyond 540 nm (∼2.3 eV). The variation of SS and μFE is explained by a physical model based on generation of singly ionized oxygen vacancies (Vo+) and double ionized oxygen vacancies (Vo2+) within the a-IGZO active layer by high energy photons, which would form trap states near the mid-gap and the conduction band edge, respectively.
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85.30.Tv Field effect devices

Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps

A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, and A. Chin

Appl. Phys. Lett. 100, 243506 (2012); http://dx.doi.org/10.1063/1.4729589 (4 pages) | Cited 2 times

Online Publication Date: 14 June 2012

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Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal α-GeO2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO2-Ni structure with good semi-quantitative agreement with experiment.
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72.60.+g Mixed conductivity and conductivity transitions
73.40.Gk Tunneling
84.30.Sk Pulse and digital circuits
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
63.20.kg Phonon-phonon interactions

Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency

R. Dahal, K. C. Huang, J. Clinton, N. LiCausi, J.-Q. Lu, Y. Danon, and I. Bhat

Appl. Phys. Lett. 100, 243507 (2012); http://dx.doi.org/10.1063/1.4729558 (4 pages) | Cited 3 times

Online Publication Date: 15 June 2012

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We report on the design, fabrication, and performance of solid-state neutron detector based on three-dimensional honeycomb-like silicon micro-structures. The fabricated detectors use boron filled deep holes with aspect ratio of over 12 and showed a very low leakage current density of ∼7 × 10−7 A/cm2 at −1 V for device sizes varying from 2 × 2 to 5 × 5 mm2. A thermal neutron detection efficiency of 4.5% ± 0.5% with discrimination setting of 500 keV and gamma to neutron sensitivity of (1.1 ± 0.1) × 10−5 for single layer was measured without external bias for these devices. Monte-Carlo simulation predicts a maximum efficiency of 45% for such devices filled with 95% enriched 10boron.
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29.40.Wk Solid-state detectors

HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, and Jack C. Lee

Appl. Phys. Lett. 100, 243508 (2012); http://dx.doi.org/10.1063/1.4729606 (4 pages) | Cited 1 time

Online Publication Date: 15 June 2012

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In this work, we demonstrate that device characteristics could be significantly improved by incorporating more fluorine (F) into HfO2 dielectrics layer using low power SF6 plasma treatment at different positions of gate oxide. Fluorine was incorporated in three ways: 4 min treatment from the top of 6 nm HfO2, 4 min treatment in the middle of 6 nm HfO2, or 2 min treatment each in the middle and from the top of HfO2 layer. Drive current (Id) and effective channel mobility could be improved by 70% and 51%, respectively, for devices with treatment both in the middle and from the top of HfO2 high κ layer compared to those of devices without SF6 treatment. The impact of SF6 plasma treatment on devices with HfO2/In0.53Ga0.47As stack is also presented.
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85.30.Tv Field effect devices
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