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11 Jun 2012

Volume 100, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 241101 (2012); http://dx.doi.org/10.1063/1.4724309 (3 pages)

Miriam S. Vitiello, Leonardo Viti, Lorenzo Romeo, Daniele Ercolani, G. Scalari, J. Faist, F. Beltram, L. Sorba, and A. Tredicucci
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InGaN/GaN single-quantum-well microdisks

Yu-Chi Hsu (徐鈺淇), Ikai Lo (羅奕凱), Cheng-Hung Shih (施政宏), Wen-Yuan Pang (龐文淵), Chia-Hsuan Hu (胡嘉軒), Ying-Chieh Wang (王映傑), and Mitch M. C. Chou (周明奇)

Appl. Phys. Lett. 100, 242101 (2012); http://dx.doi.org/10.1063/1.4729007 (4 pages) | Cited 1 time

Online Publication Date: 11 June 2012

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We have grown InxGa1−xN/GaN quantum wells atop GaN microdisk with γ-LiAlO2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the InxGa1−xN/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk InxGa1−xN: Eg(x) = [3.42 − x * 2.65 − x * (1 − x) * 2.4] eV.
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78.67.De Quantum wells
81.05.Ea III-V semiconductors
81.07.St Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors

Relationship between threading dislocation and leakage current in 4H-SiC diodes

Hirokazu Fujiwara, Hideki Naruoka, Masaki Konishi, Kimimori Hamada, Takashi Katsuno, Tsuyoshi Ishikawa, Yukihiko Watanabe, and Takeshi Endo

Appl. Phys. Lett. 100, 242102 (2012); http://dx.doi.org/10.1063/1.4718527 (4 pages) | Cited 3 times

Online Publication Date: 11 June 2012

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The impact of threading dislocation density on the leakage current of reverse current-voltage (I–V) characteristics in Schottky barrier diodes (SBDs), junction barrier Schottky diodes, and p-n junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. Consequently, the correlation in SBDs is strong but weak in PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. The threading dislocations were found to be in the same location as the current leakage points in the SBDs but not in the PNDs.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices

Influence of linearly polarized radiation on magnetoresistance in irradiated two-dimensional electron systems

Jesús Iñarrea

Appl. Phys. Lett. 100, 242103 (2012); http://dx.doi.org/10.1063/1.4729299 (3 pages) | Cited 1 time

Online Publication Date: 11 June 2012

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We study the influence of the polarization angle of linear radiation on the radiation-induced magnetoresistance oscillations in two-dimensional electron systems and examine the polarization immunity on the temperature and quality of the sample. We have applied the radiation-driven electron orbits model obtaining that the magnetoresistance is affected by the orientation of the electric field of linearly polarized radiation when dealing with high quality samples and low temperatures. Yet, for lower quality samples and higher temperature, we recover polarization immunity in the radiation driven magnetoresistance oscillations. This could be of interest for future photoelectronics in high quality mesoscopic devices.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.63.-b Electronic transport in nanoscale materials and structures
78.20.Ls Magneto-optical effects

Photoexcited carrier dynamics in AlInN/GaN heterostructures

V. Liuolia, S. Marcinkevičius, D. Billingsley, M. Shatalov, J. Yang, R. Gaska, and M. S. Shur

Appl. Phys. Lett. 100, 242104 (2012); http://dx.doi.org/10.1063/1.4729033 (4 pages) | Cited 2 times

Online Publication Date: 12 June 2012

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Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructures have been examined by time-resolved and scanning near-field photoluminescence (PL) spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times indicate efficient photoexcited hole transfer from AlInN to GaN via sub-band-gap states. These states are attributed to extended defects and In clusters. Near-field PL scans show that diameter of the localization sites and the distance between them are below 100 nm. Spatial variations of the GaN PL wavelength have been assigned to the electric field inhomogeneities at the heterostructure interface.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
78.47.da Excited states
61.72.Nn Stacking faults and other planar or extended defects
71.20.Nr Semiconductor compounds
72.20.Fr Low-field transport and mobility; piezoresistance

Damping of optomechanical disks resonators vibrating in air

D. Parrain, C. Baker, T. Verdier, P. Senellart, A. Lemaitre, S. Ducci, G. Leo, and I. Favero

Appl. Phys. Lett. 100, 242105 (2012); http://dx.doi.org/10.1063/1.4729014 (4 pages)

Online Publication Date: 13 June 2012

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We report on miniature GaAs disk optomechanical resonators vibrating in air in the radiofrequency range. The flexural modes of the disks are studied by scanning electron microscopy and optical interferometry, and correctly modeled with the elasticity theory for annular plates. The mechanical damping is systematically measured, and confronted with original analytical models for air damping. Formulas are derived that correctly reproduce both the mechanical modes and the damping behavior, and can serve as design tools for optomechanical applications in fluidic environment.
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42.79.-e Optical elements, devices, and systems
46.40.Ff Resonance, damping, and dynamic stability
46.40.Jj Aeroelasticity and hydroelasticity
07.10.-h Mechanical instruments and equipment

Effect of the energy dependence of the carrier scattering time on the thermoelectric power factor of quantum wells and nanowires

Jane E. Cornett and Oded Rabin

Appl. Phys. Lett. 100, 242106 (2012); http://dx.doi.org/10.1063/1.4729381 (4 pages)

Online Publication Date: 13 June 2012

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The size-dependence of the thermoelectric power factor of thin-films and nanowires is theoretically investigated from the electric quantum limit (EQL) to the bulk-like regime. Different functional forms of the energy-dependent relaxation time τ(E) are incorporated in the model to account for carrier scattering mechanisms typical in semiconductor nanostructures. The calculations show that the steeper the increase in the relaxation time with carrier energy, the higher the power factor-to-average scattering time ratio, PF/〈τ〉, confirming the benefits of the preferential scattering of low-energy carriers to thermoelectric performance. However, outside the EQL, the power factor values are lower in the low-dimensional structures than in their three-dimensional counterparts. Thus, the power factor is more readily improved by modifications of the scattering rates than by quantization of the energy states.
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72.20.Pa Thermoelectric and thermomagnetic effects
73.21.Hb Quantum wires

Intense monochromatic terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells

Hideo Takeuchi, Souta Asai, Syuichi Tsuruta, and Masaaki Nakayama

Appl. Phys. Lett. 100, 242107 (2012); http://dx.doi.org/10.1063/1.4729125 (4 pages)

Online Publication Date: 15 June 2012

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We demonstrate that, in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells, the terahertz electromagnetic wave from the coherent GaAs-like longitudinal optical (LO) phonon is enhanced by a piezoelectric field originating from a tensile strain in the GaAs layer. The presence of the tensile strain is confirmed using Raman scattering spectroscopy. The Fourier power spectrum of the terahertz waveform shows that the intensity of the terahertz band of the coherent GaAs-like LO phonon increases as the index n approaches 1. The amplitude of the GaAs-like LO phonon is proportional to the piezoelectric field in the strained GaAs layer.
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78.67.De Quantum wells
78.70.Gq Microwave and radio-frequency interactions
63.22.Np Layered systems
78.30.Fs III-V and II-VI semiconductors

Tunable device properties of free-standing inorganic/organic flexible hybrid structures obtained by exfoliation

Amitha Shetty and Karuna Kar Nanda

Appl. Phys. Lett. 100, 242108 (2012); http://dx.doi.org/10.1063/1.4729550 (5 pages) | Cited 1 time

Online Publication Date: 15 June 2012

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We report the fabrication of free-standing flexible inorganic/organic hybrid structures by exfoliating ZnO nanostructured films from the flat indium tin oxide (ITO)/silicon/sapphire substrates using poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). Strong interaction between ZnO and PEDOT:PSS and the thermomechanical response of PEDOT:PSS are the key issues for the exfoliation to prevail. The performance of the free-standing hybrid structures as rectifiers and photodetectors is better as compared to ITO supported hybrid structures. It is also shown that device properties of hybrid structures can be tuned by using different electrode materials.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
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