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18 Jun 2012

Volume 100, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 100, 252401 (2012); http://dx.doi.org/10.1063/1.4727909 (4 pages)

Ming Yan, Christian Andreas, Attila Kákay, Felipe García-Sánchez, and Riccardo Hertel
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An empirical quantitative fluorescence resonance energy transfer method for multiple acceptors based on partial acceptor photobleaching

Huaina Yu, Jianwei Zhang, Huali Li, Junle Qu, and Tongsheng Chen

Appl. Phys. Lett. 100, 253701 (2012); http://dx.doi.org/10.1063/1.4729481 (4 pages)

Online Publication Date: 18 June 2012

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We present an empirical quantitative fluorescence resonance energy transfer (FRET) method based on partial acceptor photobleaching, termed emp-PbFRET. This method can be used to determine the FRET efficiency of construct with multiple acceptors by measuring the degree of acceptor photobleaching (x) and the donor intensity before and after photobleaching. We validated the emp-PbFRET method using the constructs consisting one Cerulean and two (VCV) or three (VCVV) Venus. The FRET efficiencies of VCV and VCVV in living cells obtained by emp-PbFRET method under different x (10%-60%) were consistent with those obtained by fluorescence lifetime imaging and spectral imaging methods.
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78.55.-m Photoluminescence, properties and materials
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Memory-like behavior as a feature of electrical signal transmission in melanin-like bio-polymers

M. Ambrico, P. F. Ambrico, T. Ligonzo, A. Cardone, S. R. Cicco, A. Lavizzera, V. Augelli, and G. M. Farinola

Appl. Phys. Lett. 100, 253702 (2012); http://dx.doi.org/10.1063/1.4729754 (5 pages) | Cited 1 time

Online Publication Date: 20 June 2012

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The memory-like behavior of melanin biopolymer under electrical stimuli is shown through electrical transport characterization performed on melanin based metal insulator semiconductor structures on silicon. The presence of a memory window and retention behavior is verified by capacitance-voltage read outs before and after the application of voltage pulses. Interestingly, these phenomena occur without the presence of metallic nanoclusters enclosed in the melanin matrix. Charge trapping is considered the main mechanism responsible for the melanin memory-like character. The inability to erase the memory window has been ascribed to the permanent polarization effect during the application of the voltage pulse.
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84.30.Sk Pulse and digital circuits

Improved sensing performance of polycrystalline-silicon based dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing membrane

Hyun-June Jang, Tae-Eon Bae, and Won-Ju Cho

Appl. Phys. Lett. 100, 253703 (2012); http://dx.doi.org/10.1063/1.4729762 (4 pages)

Online Publication Date: 21 June 2012

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Improved sensing performance, larger pH sensitivity that breaches the Nernst response limit with excellent stability, was realized on polycrystalline silicon based dual-gate (DG) ion-sensitive field-effect transistors. The capacitive coupling between the top and bottom gate oxides for a DG operation amplified its sensitivity to as high as 325.8 mV/pH. In particular, the SiO2/HfO2/Al2O3 (OHA) layer, proposed as an engineered sensing membrane, significantly reinforced the sensing margin of devices as well as the chemical stability for long-term use. The sensing characteristics of the OHA and conventional SiO2 layer were evaluated for single gate and DG operation modes, respectively.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
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