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18 Jun 2012

Volume 100, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 252401 (2012); http://dx.doi.org/10.1063/1.4727909 (4 pages)

Ming Yan, Christian Andreas, Attila Kákay, Felipe García-Sánchez, and Riccardo Hertel
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Surface load induced electrical impedance shift in relaxor-PbTiO3 crystal piezoelectric resonators

Kyungrim Kim, Shujun Zhang, and Xiaoning Jiang

Appl. Phys. Lett. 100, 253501 (2012); http://dx.doi.org/10.1063/1.4729766 (4 pages) | Cited 1 time

Online Publication Date: 18 June 2012

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The effect of surface loads on Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal piezoelectric resonators was studied. Electrical impedance shifts at both resonance and anti-resonance frequencies due to surface loads were recorded for comparison among face-shear mode, thickness-shear mode, and thickness mode resonators. It was observed that electrical impedances of face shear mode resonators exhibited significantly higher sensitivity to surface load changes comparing with other resonators with similar dimensions, because of enhanced energy dissipation in face shear mode resonators, indicating a promising innovative face-shear mode single crystal piezoelectric sensing mechanism.
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77.65.Fs Electromechanical resonance; quartz resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Nongalvanic thermometry for ultracold two-dimensional electron domains

S. Gasparinetti, M. J. Martínez-Pérez, S. de Franceschi, J. P. Pekola, and F. Giazotto

Appl. Phys. Lett. 100, 253502 (2012); http://dx.doi.org/10.1063/1.4729388 (4 pages) | Cited 1 time

Online Publication Date: 18 June 2012

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Measuring the temperature of a two-dimensional electron gas at temperatures of a few mK is a challenging issue, which standard thermometry schemes may fail to tackle. We propose and analyze a nongalvanic thermometer, based on a quantum point contact and quantum dot, which delivers virtually no power to the electron system to be measured.
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07.20.Dt Thermometers
85.35.-p Nanoelectronic devices

Controlled promotion of crystallization for application to multilevel phase-change memory

You Yin and Sumio Hosaka

Appl. Phys. Lett. 100, 253503 (2012); http://dx.doi.org/10.1063/1.4730439 (4 pages)

Online Publication Date: 19 June 2012

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In this work, controlled promotion of crystallization was investigated for application to multilevel storage by using a vertical TiSi3/Ge2Sb2Te5/TiN cell with a thin phase-change layer. Finite element analysis exhibits that crystallization gradually proceeds with increasing applied current in the radial direction after a filament forms. Current-voltage (I-V) characteristics show that the device resistance corresponding to the crystallized area drops with increasing sweeping current. Eight resistance levels are demonstrated and their effective crystalline thicknesses are estimated from fitting of I-V curves in the subthreshold regime on the basis of the trap-limited model.
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84.30.Sk Pulse and digital circuits

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, T. Mogami, N. Okada, M. Kato, H. Uchida, K. Kitamoto, T. Miyagi, J. Kato, and Y. Nagai

Appl. Phys. Lett. 100, 253504 (2012); http://dx.doi.org/10.1063/1.4730437 (3 pages) | Cited 1 time

Online Publication Date: 20 June 2012

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The correlation between threshold voltage (VT) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide-semiconductor field-effect transistors was studied by atom probe tomography (APT). VT values were determined for one million transistors in a single chip, and transistors having a ±4σ deviation from the median VT were analyzed using APT. VT and the channel boron concentration were positively correlated. This is consistent with the relationship between the average boron concentration of wafers implanted with different channel doses and the median VT of the million transistors. APT is suitable for the study of dopant-distribution-based device failure mechanisms.
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85.30.Tv Field effect devices

Development of a stable dielectric-barrier discharge enhanced laminar plasma jet generated at atmospheric pressure

Jie Tang, Shibo Li, Wei Zhao, Yishan Wang, and Yixiang Duan

Appl. Phys. Lett. 100, 253505 (2012); http://dx.doi.org/10.1063/1.4729818 (5 pages) | Cited 1 time

Online Publication Date: 21 June 2012

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A stable nonthermal laminar atmospheric-pressure plasma source equipped with dielectric-barrier discharge was developed to realize more efficient plasma generation, with the total energy consumption reduced to nearly 25% of the original. Temperature and emission spectra monitoring indicates that this plasma is uniform in the lateral direction of the jet core region. It is also found that this plasma contains not only abundant excited argon atoms but also sufficient excited N2 and OH. This is mainly resulted from the escape of abundant electrons from the exit, due to the sharp decrease of sustaining voltage and the coupling between ions and electrons.
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52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.Hc Glow; corona
52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.50.Dg Plasma sources

Multiple silicon nanowire complementary tunnel transistors for ultralow-power flexible logic applications

M. Lee, Y. Jeon, J.-C. Jung, S.-M. Koo, and S. Kim

Appl. Phys. Lett. 100, 253506 (2012); http://dx.doi.org/10.1063/1.4729930 (5 pages) | Cited 1 time

Online Publication Date: 21 June 2012

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Based on experimental and simulation studies to gain insight into the suppression of ambipolar conduction in two distinct tunnel field-effect transistor (TFET) devices (that is, an asymmetric source-drain doping or a properly designed gate underlap), here we report on the fabrication and electrical/mechanical characterization of a flexible complementary TFET (c-TFET) inverter on a plastic substrate using multiple silicon nanowires (SiNWs) as the channel material. The static voltage transfer characteristic of the SiNW c-TFET inverter exhibits a full output voltage swing between 0 V and Vdd with a high voltage gain of ∼29 and a sharp transition of 0.28 V at Vdd = 3 V. A leakage power consumption of the SiNW c-TFET inverter in the standby state is as low as 17.1 pW for Vdd = 3 V. Moreover, its mechanical bendability indicates that it has good fatigue properties, providing an important step towards the realization of ultralow-power flexible logic circuits.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.07.Gf Nanowires
84.30.Sk Pulse and digital circuits

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Pradipta K. Nayak, J. A. Caraveo-Frescas, Unnat. S. Bhansali, and H. N. Alshareef

Appl. Phys. Lett. 100, 253507 (2012); http://dx.doi.org/10.1063/1.4729787 (4 pages) | Cited 1 time

Online Publication Date: 22 June 2012

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High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.
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85.30.Tv Field effect devices

Radio frequency charge sensing in InAs nanowire double quantum dots

M. Jung, M. D. Schroer, K. D. Petersson, and J. R. Petta

Appl. Phys. Lett. 100, 253508 (2012); http://dx.doi.org/10.1063/1.4729469 (4 pages) | Cited 1 time

Online Publication Date: 22 June 2012

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We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 μs at interdot charge transitions and 9 μs for charge transitions with the leads.
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85.30.-z Semiconductor devices
84.40.Az Waveguides, transmission lines, striplines
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.60.Hv Refractometers and reflectometers

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

C. Chen, C. Song, J. Yang, F. Zeng, and F. Pan

Appl. Phys. Lett. 100, 253509 (2012); http://dx.doi.org/10.1063/1.4730601 (4 pages) | Cited 1 time

Online Publication Date: 22 June 2012

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We investigate the resistive switching mechanism and the thermal stability in room temperature-fabricated nonvolatile memory consisting of W/TaOx/Pt. By comparing the chemical bonding of Ta 4f between high and low resistance states at W/TaOx and TaOx/Pt interfaces, the switching mechanism is confirmed to be dominated by the oxygen ions drift in the TaOx film. Besides, it is demonstrated that the resistive switching behavior is still dynamic and the resistance can be maintained at temperature as high as 510 K. We found that the resistive switching behavior of TaOx film exhibits little degradation even after annealed at 1273 K.
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84.30.Sk Pulse and digital circuits
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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