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18 Jun 2012

Volume 100, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 100, 252401 (2012); http://dx.doi.org/10.1063/1.4727909 (4 pages)

Ming Yan, Christian Andreas, Attila Kákay, Felipe García-Sánchez, and Riccardo Hertel
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Electrical transport properties of (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 thin films

Hom Kandel, Tar-Pin Chen, Shawn Bourdo, Milko N. Iliev, Fumiya Watanabe, Hye-Won Seo, and Tito Viswanathan

Appl. Phys. Lett. 100, 252601 (2012); http://dx.doi.org/10.1063/1.4729871 (4 pages)

Online Publication Date: 19 June 2012

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The electrical transport properties of (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 (PBCGO) thin films have been investigated. The electrical resistivity, ρ(T), of (110)-oriented PBCGO thin films is 8.91 × 105 Ω-cm at 77 K, about five orders of magnitude higher than that of the (110)-oriented PrBa2Cu3O7 thin films and follows Mott’s T−1/4 law up to room temperature. Our experimental results suggest filling and localization of holes in Cu-O chains of (110)-oriented PBCGO thin films. We observed very less proximity effect on YBa2Cu3O7 (YBCO)/PBCGO multilayers indicating that the (110)-oriented PBCGO thin films may serve as effective insulators in YBCO SIS tunneling Josephson junction.
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74.25.fc Electric and thermal conductivity
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.72.-h Cuprate superconductors
74.78.Fk Multilayers, superlattices, heterostructures

Etching suspended superconducting tunnel junctions from a multilayer

H. Q. Nguyen, L. M. A. Pascal, Z. H. Peng, O. Buisson, B. Gilles, C. B. Winkelmann, and H. Courtois

Appl. Phys. Lett. 100, 252602 (2012); http://dx.doi.org/10.1063/1.4729779 (4 pages) | Cited 1 time

Online Publication Date: 22 June 2012

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A method to fabricate large-area superconducting hybrid tunnel junctions with a suspended central normal metal part is presented. The samples are fabricated by combining photo-lithography and chemical etch of a superconductor—insulator—normal metal multilayer. The process involves few fabrication steps, is reliable and produces extremely high-quality tunnel junctions. Under an appropriate voltage bias, a significant electronic cooling is demonstrated. We analyze semi-quantitatively the thermal behavior of a typical device.
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85.25.Cp Josephson devices
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