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18 Jun 2012

Volume 100, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 100, 252401 (2012); http://dx.doi.org/10.1063/1.4727909 (4 pages)

Ming Yan, Christian Andreas, Attila Kákay, Felipe García-Sánchez, and Riccardo Hertel
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Ab initio-based study for adatom kinetics on AlN(0001) surfaces during metal-organic vapor-phase epitaxy growth

Toru Akiyama, Kohji Nakamura, and Tomonori Ito

Appl. Phys. Lett. 100, 251601 (2012); http://dx.doi.org/10.1063/1.4729479 (3 pages)

Online Publication Date: 18 June 2012

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The kinetics of Al and N adatoms on reconstructed AlN(0001) surfaces under growth conditions is investigated by performing first-principles pseudopotential calculations. Our calculations reveal that the adsorption of Al adatom strongly depends on the surface reconstruction while its diffusion is not affected by the reconstruction: the adsorption of Al adatom on the surface under N-rich conditions is much easier than that under H-rich conditions. These results indicate that the growth of AlN during metal-organic vapor-phase epitaxy is prominent under N-rich conditions rather than H-rich conditions, consistent with experimentally reported growth rate difference.
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68.43.Mn Adsorption kinetics
68.43.Bc Ab initio calculations of adsorbate structure and reactions
68.35.bg Semiconductors
66.30.-h Diffusion in solids
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Zener tunneling between Landau orbits in two-dimensional electron Corbino rings

A. A. Bykov, D. V. Dmitriev, I. V. Marchishin, S. Byrnes, and S. A. Vitkalov

Appl. Phys. Lett. 100, 251602 (2012); http://dx.doi.org/10.1063/1.4729590 (3 pages) | Cited 3 times

Online Publication Date: 18 June 2012

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Current induced oscillations of differential conductivity of two-dimension electrons, placed in quantizing magnetic fields, are observed in GaAs quantum wells in Corbino geometry. The oscillations are periodic in the square of the inverse magnetic field and occur in Corbino rings with a width which is much lesser than the radius of the rings. The conductance oscillations are described by Zener tunneling between Landau orbits in the absence of the Hall electric field.
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73.40.Gk Tunneling
72.20.My Galvanomagnetic and other magnetotransport effects
73.63.Hs Quantum wells

Characterization of irradiation damage distribution near TiO2/SrTiO3 interfaces using coherent acoustic phonon interferometry

Dmitry Yarotski, Engang Fu, Li Yan, Quanxi Jia, Yongqiang Wang, Antoinette J. Taylor, and Blas P. Uberuaga

Appl. Phys. Lett. 100, 251603 (2012); http://dx.doi.org/10.1063/1.4729621 (3 pages)

Online Publication Date: 18 June 2012

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We apply ultrafast coherent acoustic phonon interferometry to characterize the distribution of the radiation damage near the TiO2/SrTiO3 interfaces. We show that the optical and mechanical properties of anatase TiO2 remain unaffected by the radiation dosages in the 0.1÷5 dpa (displacements per atom) range, while the degraded optical response indicates a significant defect accumulation in the interfacial region of SrTiO3 at 0.1 dpa and subsequent amorphization at 3 dpa. Comparison between the theoretical simulations and the experimental results reveals an almost threefold reduction of the sound velocity in the irradiated SrTiO3 layer with peak damage levels of 3 and 5 dpa.
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61.80.Jh Ion radiation effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
63.20.-e Phonons in crystal lattices
68.60.Bs Mechanical and acoustical properties
78.66.Li Other semiconductors

Few-layer graphene growth on 6H-SiC(0001) surface at low temperature via Ni-silicidation reactions

C. Y. Kang, L. L. Fan, S. Chen, Z. L. Liu, P. S. Xu, and C. W. Zou

Appl. Phys. Lett. 100, 251604 (2012); http://dx.doi.org/10.1063/1.4729876 (5 pages) | Cited 2 times

Online Publication Date: 19 June 2012

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Few-layer graphene (FLG) has been prepared by thermal annealing of SiC crystal via the surface Ni-silicidation reactions. Results reveal that the temperature plays an important role for the final FLG quality and the optimized annealing temperature is about 800 °C. The investigation of surface morphology and microstructure for the FLG sample indicates that after the rapid cooling, the carbon atoms will segregate to form the FLG layer and the NiSix particles will congregate on the top surface. The mechanism of the FLG formation on SiC surface assisted by the Ni ultra-thin layer is briefly discussed based on the experimental results.
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68.55.ag Semiconductors
61.48.Gh Structure of graphene
71.20.Nr Semiconductor compounds
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Gh Other heat and thermomechanical treatments
68.35.bg Semiconductors

Surface metallic states in ultrathin Bi(001) films studied with terahertz time-domain spectroscopy

K. Yokota, J. Takeda, C. Dang, G. Han, D. N. McCarthy, T. Nagao, S. Hishita, M. Kitajima, and I. Katayama

Appl. Phys. Lett. 100, 251605 (2012); http://dx.doi.org/10.1063/1.4729149 (4 pages)

Online Publication Date: 19 June 2012

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Dynamical response of surface metallic states in single crystalline ultrathin Bi(001) films on Si(111) 7 × 7 surface was investigated at a spectral range of 0.1–12 THz by broadband terahertz time-domain spectroscopy. The observed transmittance increased with a decrease in the thickness, without showing a gap structure. The measured complex dielectric dispersion was analyzed using a Drude model, and the plasma frequency (ωp) and damping constant (γ) were found to be inversely proportional to the thickness. The results strongly indicate the existence of surface metallic states, whose carrier density and damping constant are estimated to be 3.08 × 1019 cm−3 and 4.83 × 102 THz, respectively.
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73.20.At Surface states, band structure, electron density of states
73.50.Mx High-frequency effects; plasma effects
73.61.At Metal and metallic alloys
77.22.Ch Permittivity (dielectric function)
78.70.Gq Microwave and radio-frequency interactions
68.55.jd Thickness

Domain epitaxy in TiO2/α-Al2O3 thin film heterostructures with Ti2O3 transient layer

M. R. Bayati, R. Molaei, R. J. Narayan, J. Narayan, H. Zhou, and S. J. Pennycook

Appl. Phys. Lett. 100, 251606 (2012); http://dx.doi.org/10.1063/1.4729937 (3 pages) | Cited 7 times

Online Publication Date: 21 June 2012

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Rutile TiO2 films were grown epitaxially on α-alumina (sapphire(0001)) substrates and characterized by x-ray diffraction and scanning transmission electron microscopy. It was revealed that the rutile film initially grows pseudomorphically on sapphire as Ti2O3 and, after a few monolayers, it grows tetragonally on the Ti2O3/sapphire platform. Formation of the Ti2O3 transient layer was attributed to the symmetry mismatch between tetragonal structure of TiO2 and hexagonal structure of alumina. The separation between the ½[10math](101) misfit dislocations was dictated by Ti2O3 and was determined to be 9.7 Å which is consistent with 4/3 and 3/2 alternating domains across the film/substrate interface.
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81.15.Fg Pulsed laser ablation deposition
68.55.ag Semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
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