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25 Jun 2012

Volume 100, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 100, 261104 (2012); http://dx.doi.org/10.1063/1.4711253 (4 pages)

Marcelo Davanço, Jun Rong Ong, Andrea Bahgat Shehata, Alberto Tosi, Imad Agha, Solomon Assefa, Fengnian Xia, William M. J. Green, Shayan Mookherjea, and Kartik Srinivasan
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Field-dependent activation energy of nucleation and switching in phase change memory

J. M. Li, H. X. Yang, and K. G. Lim

Appl. Phys. Lett. 100, 263501 (2012); http://dx.doi.org/10.1063/1.4731289 (4 pages)

Online Publication Date: 25 June 2012

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Exothermal resistance measurement reveals that the phase transition of Ge2Sb2Te5 phase change memory (PCM) can take place far below the traditional crystallization temperature. The activation energy of nucleation is no longer a constant and highly dependent on applied electric fields. The field-dependent activation energy becomes much lower with higher applied field. Further, the field-dependent activation energy can be described by an exponential function of the applied fields. These findings provide physical fundamentals for analysis of nucleation switching mechanism of PCM. A switching model has been developed and the simulated current-voltage curve is in good agreement with the experimental measurement.
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84.30.Sk Pulse and digital circuits

Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

Ling Yan Liang, Hong Tao Cao, Xiao Bo Chen, Zhi Min Liu, Fei Zhuge, Hao Luo, Jun Li, Yi Cheng Lu, and Wei Lu

Appl. Phys. Lett. 100, 263502 (2012); http://dx.doi.org/10.1063/1.4731271 (5 pages)

Online Publication Date: 26 June 2012

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Ambipolar thin film transistors have attracted increasing research interests due to their promising applications in complementary logic circuits and the dissipative charge transporting devices. Here, we report the fabrication of an ambipolar transistor using tin mono-oxide (SnO) as a channel, which possesses balanced electron and hole field-effect mobilities. A complementary metal oxide semiconductor-like inverter using the SnO dual operation transistors is demonstrated with a maximum gain up to 30 and long-term air stability. Such logic device configuration would simplify the circuit design and fabrication process, offering more opportunities for designing and constructing oxide-based logic circuits.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

Lingqin Huang, Bingbing Liu, Qiaozhi Zhu, Suhua Chen, Mingchao Gao, Fuwen Qin, and Dejun Wang

Appl. Phys. Lett. 100, 263503 (2012); http://dx.doi.org/10.1063/1.4730435 (4 pages) | Cited 1 time

Online Publication Date: 26 June 2012

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Ti Ohmic contacts to relatively highly doped (1 × 1018 cm−3) n-type 4H-SiC have been produced, without high temperature annealing, by means of low temperature electronic cyclotron resonance microwave hydrogen plasma pre-treatment (HPT) of the SiC surface. The as-deposited Ti/4H-SiC contacts show Ohmic properties, and the specific contact resistance obtained is as low as 2.07 × 10−4 Ω·cm2 after annealing at low temperatures (400 °C). This is achieved by low barrier height at Ti/SiC interface, which could be attributed to decrease of surface states density by the HPT releasing Fermi level pinning, and to band-gap narrowing, image-force, and thermionic-field emission at high doping.
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73.40.Ns Metal-nonmetal contacts
81.65.Rv Passivation
52.77.-j Plasma applications
61.72.Cc Kinetics of defect formation and annealing
73.20.At Surface states, band structure, electron density of states
73.40.Cg Contact resistance, contact potential

Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes

Chang Sheng Xia, Z. M. Simon Li, Z. Q. Li, Yang Sheng, Zhi Hua Zhang, Wei Lu, and Li Wen Cheng

Appl. Phys. Lett. 100, 263504 (2012); http://dx.doi.org/10.1063/1.4731625 (4 pages)

Online Publication Date: 27 June 2012

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Blue InGaN/GaN light-emitting diodes with different numbers of quantum wells (QWs) are numerically investigated. With increase of QW number, the output power and forward voltage are both increased consistently. In terms of power conversion efficiency, the optimal number of QWs increases with the increase of injection currents and is twelve at experimental current of 42 A/cm2. Simulation results show that the bias voltage in QW plane is reduced with increase of QW number. This effect improves the current spreading and uniformity of carrier distribution in QW plane which results in the reduction of electron leakage and enhancement of emission efficiency.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Antireflective ZnSnO/Ag bilayer-based transparent source and drain electrodes for transparent thin film transistors

Kwang-Hyuk Choi, Hyun-Woo Koo, Tae-Woong Kim, and Han-Ki Kim

Appl. Phys. Lett. 100, 263505 (2012); http://dx.doi.org/10.1063/1.4732091 (5 pages) | Cited 2 times

Online Publication Date: 28 June 2012

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We report on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for highly transparent ZTO channel-based thin film transistors (TFTs). Although both bilayer and trilayer films have a similar sheet resistance (3–5 Ω/sq), the ZTO/Ag bilayer is a more effective transparent S/D electrode for ZTO channel layer than the ZTO/Ag/ZTO trilayer S/D electrode, due to the direct contact of the Ag layer on the ZTO channel layer and a desirable oxide-metal-oxide multilayer structure for antireflection effects. ZTO channel-based all-transparent TFTs with ZTO/Ag bilayer S/D electrodes exhibited a saturation mobility of 4.54 cm2/Vs and a switching value (1.31 = V/decade), comparable to those of a ZTO channel-based TFT with metallic Ag S/D electrodes. This indicates that the antireflective ZTO/Ag bilayer is a promising transparent S/D electrode for use in all-transparent TFTs as a substitute for conventional opaque metal S/D electrodes.
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85.30.Tv Field effect devices
42.79.Wc Optical coatings

Ultra-wideband coaxial hybrid coupler for load resilient ion cyclotron range of frequency heating at fusion plasmas

H. J. Kim, Y. S. Bae, H. L. Yang, J.-G. Kwak, S. J. Wang, B. K. Kim, and J. J. Choi

Appl. Phys. Lett. 100, 263506 (2012); http://dx.doi.org/10.1063/1.4731241 (4 pages)

Online Publication Date: 28 June 2012

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We designed a high power and ultra-wideband two-section 3 dB coaxial hybrid coupler for load resilient ion cyclotron range of frequency heating by configuring asymmetric impedance matching using a three-dimensional simulation code, hfss. By adjusting the characteristic impedances of main and coupled lines of the hybrid coupler, we realized that the bandwidth of the proposed circuit is not only wider than that of a conventional three-section coupler, but also that the bandwidth is almost twice as wide compared to the conventional two-section hybrid coupler while maintaining the identical overall size.
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52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
28.52.Cx Fueling, heating and ignition
84.40.Az Waveguides, transmission lines, striplines
84.30.Bv Circuit theory

A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

N. Janković, D. Pantić, S. Batcup, and P. Igić

Appl. Phys. Lett. 100, 263507 (2012); http://dx.doi.org/10.1063/1.4731630 (4 pages)

Online Publication Date: 29 June 2012

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A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.
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85.30.Tv Field effect devices

Effective light trapping in thin film silicon solar cells from textured Al doped ZnO substrates with broad surface feature distributions

Yanfeng Wang, Xiaodan Zhang, Lisha Bai, Qian Huang, Changchun Wei, and Ying Zhao

Appl. Phys. Lett. 100, 263508 (2012); http://dx.doi.org/10.1063/1.4731775 (4 pages) | Cited 1 time

Online Publication Date: 29 June 2012

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We used a multi-step process to make aluminum-doped ZnO (AZO) films with a wide range distribution of textures for light trapping in thin film silicon solar cells, which includes AZO deposition, HCl etching, AZO re-deposition, and HCl re-etching. The large features created by the first etching provide an effective light trapping for long wavelength light; the small features from the second etching enhances the short wavelength light trapping. Microcrystalline silicon solar cells deposited on the above-mentioned AZO show an improved photocurrent density without loss in the open-circuit voltage and fill factor, resulting in an overall increase in efficiency by 14.64%.
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88.40.jj Silicon solar cells
88.40.hj Efficiency and performance of solar cells

Real time quasiparticle tunneling measurements on an illuminated quantum capacitance detector

K. J. Stone, K. G. Megerian, P. K. Day, P. M. Echternach, J. Bueno, and N. Llombart

Appl. Phys. Lett. 100, 263509 (2012); http://dx.doi.org/10.1063/1.4731880 (4 pages) | Cited 1 time

Online Publication Date: 29 June 2012

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Quasiparticle tunneling events are measured in real time using a quantum capacitance detector (QCD), allowing for the extraction of tunneling rates as a function of temperature and optical loading of radiation coming from a black body source filtered to 200 m. The measurements are used to corroborate the basic operating principles of the QCD. An estimate of the residual quasiparticle density is made, and the noise equivalent power (NEP) is assessed to be 7.2×10−20 W/Hz1/2 at the lowest signal power of 9.2×10−20 W. This NEP was higher than the photon noise by only a factor of 7 over a wide signal power range.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
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