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25 Jun 2012

Volume 100, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 100, 261104 (2012); http://dx.doi.org/10.1063/1.4711253 (4 pages)

Marcelo Davanço, Jun Rong Ong, Andrea Bahgat Shehata, Alberto Tosi, Imad Agha, Solomon Assefa, Fengnian Xia, William M. J. Green, Shayan Mookherjea, and Kartik Srinivasan
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Trench-filled cellular parylene electret for piezoelectric transducer

Yue Feng, Kei Hagiwara, Yoshinori Iguchi, and Yuji Suzuki

Appl. Phys. Lett. 100, 262901 (2012); http://dx.doi.org/10.1063/1.4730952 (4 pages)

Online Publication Date: 25 June 2012

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Cellular ferroelectrets with charged voids are promising for piezoelectric transducers, but the long-term stability or reproducibility due to the conventional “stochastic” fabrication and the corona charging methods is of concern. We microfabricated a high-density cellular piezoelectret with high-aspect-ratio polymer structures based on the trench-filled parylene technology. Vertical walls of the parylene structures are charged using soft x-ray to realize uniform artificial dipoles, of which moments could vary along with parylene structural deformation driven by the inertia of a seismic mass. Charge and voltage sensitivities of 9600 pC/N and 960 V/N with respect to the in-plane resonant oscillation have been achieved at 149 Hz, respectively.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

Dielectric elastomer transducers with enhanced force output and work density

Hristiyan Stoyanov, Paul Brochu, Xiaofan Niu, Enrico Della Gaspera, and Qibing Pei

Appl. Phys. Lett. 100, 262902 (2012); http://dx.doi.org/10.1063/1.4730953 (3 pages) | Cited 2 times

Online Publication Date: 25 June 2012

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We demonstrate that the force output and work density of polydimethylsiloxane (PDMS) based dielectric elastomer transducers can be significantly enhanced by the addition of high permittivity titanium dioxide nanoparticles. The nanocomposites are capable of maintaining the actuation strain performance of the pure PDMS at relatively low electric fields while increasing the force output and work density due to mechanical reinforcement. A model relating the Maxwell stress to the measured force from the actuator was used to determine the dielectric permittivity at high electric fields thus providing results that can be directly correlated to device performance. This approach toward higher work density materials should enable smaller, lighter, and less intrusive actuator systems ideal for biomedical and robotic devices in particular.
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07.07.Mp Transducers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Three-state resistive switching in CoFe2O4/Pb(Zr0.52Ti0.48)O3/ZnO heterostructure

Ziwei Li, Mingxiu Zhou, Wangfeng Ding, Hang Zhou, Bo Chen, Jian-Guo Wan, Jun-Ming Liu, and Guanghou Wang

Appl. Phys. Lett. 100, 262903 (2012); http://dx.doi.org/10.1063/1.4730965 (5 pages) | Cited 1 time

Online Publication Date: 25 June 2012

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The heterostructural film combining multiferroic CoFe2O4/Pb(Zr0.52Ti0.48)O3 bilayer with semiconductor ZnO layer was prepared. Three-state resistive switching was demonstrated by time-dependent current measurements under different stimuli combination of voltage pulse and magnetic bias. The asymmetry diodelike current-voltage, capacitance-voltage, and polarization-voltage loops, which seriously depend on magnetic bias, were observed. We revealed that three-state resistive switching was dominated by the changes in the charge carriers in the heterostructure, which were modulated by the magnetoelectric coupling between ferromagnetic and ferroelectric layers and interface polarization coupling between ferroelectric and semiconductor layers. This work provides promising candidates for developing advanced switchable devices with multifunctional memory.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
77.55.Nv Multiferroic/magnetoelectric films

Reduced leakage currents and possible charge carriers tuning in Mg-doped Ga0.6Fe1.4O3 thin films

C. Lefevre, R. H. Shin, J. H. Lee, S. H. Oh, F. Roulland, A. Thomasson, E. Autissier, C. Meny, W. Jo, and N. Viart

Appl. Phys. Lett. 100, 262904 (2012); http://dx.doi.org/10.1063/1.4729872 (4 pages)

Online Publication Date: 26 June 2012

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Ga0.6Fe1.4O3 is predicted to be magnetoelectric with non zero magnetization at room temperature. However, in thin films, electric properties are overshadowed by strong leakage currents. In this Letter, we show that Mg doping in Ga0.6Fe1.4O3 thin films grown by pulsed laser deposition allows decreasing the leakage current density by four orders of magnitude and might simultaneously allow tuning the carriers’ nature. These results suggest the possibility to develop a new class of material exhibiting room temperature magnetization, tunable transport properties, and magnetoelectric properties.
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77.55.Nv Multiferroic/magnetoelectric films
73.61.Le Other inorganic semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Fg Pulsed laser ablation deposition
68.55.ag Semiconductors
75.85.+t Magnetoelectric effects, multiferroics

Detection of a piezoelectric effect in thin films of thermally grown SiO2 via lock-in ellipsometry

Guy Lazovski, Ellen Wachtel, and Igor Lubomirsky

Appl. Phys. Lett. 100, 262905 (2012); http://dx.doi.org/10.1063/1.4731287 (3 pages)

Online Publication Date: 26 June 2012

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We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This value is consistent with literature descriptions of SiO2 residual ordering based on structural measurements and modeling. Our observation demonstrates that the residual ordering in thermally grown silicon SiO2 is non-centrosymmetric and provides a rare example of diffusion controlled uniaxial growth producing macroscopic piezoelectricity.
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77.55.H- Piezoelectric and electrostrictive films
77.65.-j Piezoelectricity and electromechanical effects
07.60.Fs Polarimeters and ellipsometers

Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

E. Mikheev, I. Stolichnov, Z. Huang, A. W. Rushforth, J. A. Haigh, R. P. Campion, K. W. Edmonds, B. L. Gallagher, and N. Setter

Appl. Phys. Lett. 100, 262906 (2012); http://dx.doi.org/10.1063/1.4731245 (4 pages) | Cited 2 times

Online Publication Date: 27 June 2012

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We demonstrate charge-mediated and non-volatile control of anisotropic magnetoresistance (AMR) in a dilute magnetic semiconductor (Ga,Mn)(As,P) with an integrated polymer ferroelectric gate. The persistent electric field associated with switchable polarization in the ferroelectric layer is shown to be capable of strongly modulating the AMR magnitude. Furthermore, ferroelectric gate switching has a profound impact on the nature of AMR, changing the symmetry of the effect and enhancing/suppressing the crystalline component of AMR. Thus, in addition to a rather weak modulation of the ferromagnetic Curie temperature (4-5 K) reported previously, the ferroelectric gate can induce a strong deterministic switching of the magnetotransport anisotropy.
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72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Gw Magnetic anisotropy
75.50.Pp Magnetic semiconductors
77.80.Fm Switching phenomena
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Magnetoelectric relaxation in rhombohedral LiNbO3-CoFe2O4

Yemei Han, Yueying Liu, Peter Zavalij, Lourdes Salamanca-Riba, Elizabeth Cantando, Richard Bergstrom, Jr., Lingxia Li, and Manfred Wuttig

Appl. Phys. Lett. 100, 262907 (2012); http://dx.doi.org/10.1063/1.4729933 (4 pages)

Online Publication Date: 27 June 2012

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We demonstrate a magnetoelectric nanocomposite, LiNbO3-CoFe2O4 (LNO-CFO), consisting of rhombohedral R3c LNO and R3m CFO phases. It is characterized by a maximum inverse magnetoelectric coefficient of 6.5 Oe cm·V−1 measured in a 106 V/m electric field, and a magnetic field dependent Vogel–Fulcher-like relaxation characterized by a relaxation time τ = τ0exp(−ΔH/k(Tm−TvfH)), τ0 = 29.66 s, ΔH = 1.06 eV, TvfH represents the magnetic field-dependent Vogel-Fulcher temperature. The activation energy equals the activation energy of oxygen vacancy diffusion in niobate-based crystals. The room temperature electric field-induced magnetization change relaxes as τ = 18.05 s.
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75.85.+t Magnetoelectric effects, multiferroics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.jd Vacancies

High-stability oxygen sensor based on amorphous zinc tin oxide thin film transistor

Yu-Chun Chen, Ting-Chang Chang, Hung-Wei Li, Wan-Fang Chung, Chang-Pei Wu, Shih-Ching Chen, Jin Lu, Yi-Hsien Chen, and Ya-Hsiang Tai

Appl. Phys. Lett. 100, 262908 (2012); http://dx.doi.org/10.1063/1.4731773 (3 pages)

Online Publication Date: 27 June 2012

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This research presents a sol-gel derived zinc tin oxide thin film transistor (TFT) as a high-stability oxygen sensor. Due to its high sensitivity, oxygen has been traditionally regarded as having a negative influence on the electrical characteristics of zinc-based TFTs; however, TFTs can also act as an oxygen sensor. After illumination with visible light in oxygen-rich ambient, a significant increase in drain current of nearly 104 times occurs with fixed gate and drain voltages. It is expected that an optimized method of illumination can help to reset the electrical characteristics or distinguish the on/off state of this reliable oxygen sensor.
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85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Stress dependence of thermally driven pyroelectric charge release during FER-FEO phase transformations in [011] cut relaxor ferroelectric crystals

Wen D. Dong, Peter Finkel, Ahmed Amin, and Christopher S. Lynch

Appl. Phys. Lett. 100, 262909 (2012); http://dx.doi.org/10.1063/1.4731791 (4 pages) | Cited 3 times

Online Publication Date: 29 June 2012

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The stress dependence of thermally driven polarization change is reported for a ferroelectric rhombohedral to ferroelectric orthorhombic phase transformation in [011] cut and poled Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT). A jump in polarization and strain is associated with a phase transformation of the ferroelectric material. The phase transformation temperature can be tuned, over a broad temperature range, through the application of bias stress. This phenomenon has applications in the field of energy harvesting and thermal sensing.
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77.70.+a Pyroelectric and electrocaloric effects
77.80.Jk Relaxor ferroelectrics
77.80.bn Strain and interface effects
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