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25 Jun 2012

Volume 100, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 100, 261104 (2012); http://dx.doi.org/10.1063/1.4711253 (4 pages)

Marcelo Davanço, Jun Rong Ong, Andrea Bahgat Shehata, Alberto Tosi, Imad Agha, Solomon Assefa, Fengnian Xia, William M. J. Green, Shayan Mookherjea, and Kartik Srinivasan
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Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters

J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, and Y. Arakawa

Appl. Phys. Lett. 100, 263101 (2012); http://dx.doi.org/10.1063/1.4731208 (4 pages) | Cited 3 times

Online Publication Date: 25 June 2012

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We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching, along with biexciton-exciton cascaded emission process, which evidences single photon emission from high-quality QD-in-NWs.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors

Three-dimensional photoluminescence mapping and emission anisotropy of single gold nanorods

Frank Wackenhut, Antonio Virgilio Failla, Tina Züchner, Mathias Steiner, and Alfred J. Meixner

Appl. Phys. Lett. 100, 263102 (2012); http://dx.doi.org/10.1063/1.4729152 (4 pages) | Cited 5 times

Online Publication Date: 25 June 2012

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We use raster-scanning confocal microscopy in combination with radially and azimuthally polarized laser excitation for mapping the three-dimensional (3D) orientation of individual spatially isolated gold nanorods (GNRs). The simultaneous acquisition of both the elastic scattering patterns and the one-photon luminescence patterns of the same GNR allows for determining both the particle position and the orientation with high precision. By analyzing experimental patterns and comparing them to theoretical results obtained by computer simulations, we establish a complete 3D photoluminescence map of single GNRs. Both elastic scattering and luminescence patterns of the same particle are found to display modifications of the refractive index of the dielectric environment. The polarization dependence of GNRs photoluminescence suggests a plasmon-mediated process.
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78.67.Qa Nanorods
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Hx Other solid inorganic materials

Kinetics of axial composition evolution in multi-component alloy nanowires

H. Ye, Z. Y. Yu, S. Kodambaka, and V. B. Shenoy

Appl. Phys. Lett. 100, 263103 (2012); http://dx.doi.org/10.1063/1.4731628 (4 pages) | Cited 1 time

Online Publication Date: 25 June 2012

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The axial composition profiles in two-component alloy semiconductor nanowires are theoretically studied based on a comprehensive transient growth model which accounts for both surface diffusion and direct impingement of atoms to catalyst. The composition variation derives from the different growth rates contributed by each component. Our simulations reveal that the component with larger (smaller) diffusivity will segregate near the bottom (top) of the nanowire. In the presence (absence) of direct deposition on nanowire sidewalls, the steady state alloy composition is determined by the ratio of effective diffusion lengths (impingement rates to the catalyst).
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81.16.-c Methods of micro- and nanofabrication and processing
68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
66.30.Pa Diffusion in nanoscale solids
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Spontaneous formation of double helical structure due to interfacial adhesion

Xiang-Ying Ji, Meng-Qiang Zhao, Fei Wei, and Xi-Qiao Feng

Appl. Phys. Lett. 100, 263104 (2012); http://dx.doi.org/10.1063/1.4731199 (5 pages) | Cited 2 times

Online Publication Date: 26 June 2012

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Many quasi-one-dimensional micro/nanomaterials assume double or multi-stranded helical conformations, but the reasons are still unclear. On the basis of continuum mechanics analysis, we demonstrate that interfacial adhesion is a significant physical mechanism responsible for the formation of some double helices, especially at micro and nano scales and for soft materials. With the formation of a double helical structure by two nanowires, surface energy decreases while elastic strain energy increases. Their competition dictates the global morphology of adhered micro/nanowires or tubes. The theoretical model agrees well with relevant experiments.
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68.35.Np Adhesion
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
61.46.Np Structure of nanotubes (hollow nanowires)
62.23.Hj Nanowires
65.40.gp Surface energy

Gas field ion source current stability for trimer and single atom terminated W(111) tips

Radovan Urban, Jason L. Pitters, and Robert A. Wolkow

Appl. Phys. Lett. 100, 263105 (2012); http://dx.doi.org/10.1063/1.4726112 (4 pages) | Cited 1 time

Online Publication Date: 26 June 2012

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Tungsten W(111) oriented trimer-terminated tips as well as single atom tips, fabricated by a gas and field assisted etching and evaporation process, were investigated with a view to scanning ion microscopy and ion beam writing applications. In particular, ion current stability was studied for helium and neon imaging gases. Large ion current fluctuations from individual atomic sites were observed when a trimer-terminated tip was used for the creation of neon ion beam. However, neon ion current was stable when a single atom tip was employed. No such current oscillations were observed for either a trimer or a single atom tip when imaged with helium.
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81.65.Cf Surface cleaning, etching, patterning
68.43.Mn Adsorption kinetics
61.80.Jh Ion radiation effects
07.77.Ka Charged-particle beam sources and detectors
07.79.-v Scanning probe microscopes and components

Effect of oxygen deficiency on SrTiO3(001) surface reconstructions

Ryota Shimizu, Katsuya Iwaya, Takeo Ohsawa, Susumu Shiraki, Tetsuya Hasegawa, Tomihiro Hashizume, and Taro Hitosugi

Appl. Phys. Lett. 100, 263106 (2012); http://dx.doi.org/10.1063/1.4730409 (4 pages) | Cited 1 time

Online Publication Date: 26 June 2012

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The contribution of oxygen deficiencies to SrTiO3(001) surface reconstructions is studied using low-energy electron diffraction and scanning tunneling microscopy. We have prepared a SrTiO3 sample with spatially graded oxygen deficiencies, in which R33.7°-(math×math), (2×1), and R26.6°-(math×math) surface reconstructions are observed while increasing the amount of oxygen deficiencies. This indicates that oxygen nonstoichiometry has an influence on the formation of various surface reconstructions as one of the important factors. This concept is also applicable to other transition metal oxides to prepare atomically ordered surfaces in a reproducible manner.
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68.35.bt Other materials
61.66.Bi Elemental solids
61.66.Dk Alloys
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Synchrotron x-ray nano-tomography characterization of the sintering of multilayered systems

Zilin Yan, Olivier Guillon, Steve Wang, Christophe L. Martin, Chul-Seung Lee, and Didier Bouvard

Appl. Phys. Lett. 100, 263107 (2012); http://dx.doi.org/10.1063/1.4730625 (4 pages)

Online Publication Date: 26 June 2012

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Synchrotron x-ray nano-tomography was used to characterize the microstructures of multi-layer ceramic capacitors before and after sintering. 3D microstructures of the same sample were reconstructed and quantitatively analyzed. The discontinuities observed in inner electrodes were found to originate from initial heterogeneities of nickel powders in the electrodes. They are supposed to grow due to the constraint of adjacent dielectric layers. Dielectric layers show anisotropic shrinkage with a decrease in density as function of layer position in the multilayer.
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84.32.Tt Capacitors

Nanoparticle free polymer blends for light scattering films in liquid crystal displays

Satoshi Takei, Kazuhide Mochiduki, Naoya Kubo, and Yoshiyuki Yokoyama

Appl. Phys. Lett. 100, 263108 (2012); http://dx.doi.org/10.1063/1.4732092 (4 pages)

Online Publication Date: 27 June 2012

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This paper reports an approach using nanoparticle free polymer blends for light scattering films in liquid crystal displays. The ability to create the regularly structured circle of approximately 200 nm diameter in the light scattering film by blending two specified polymers with carboxylic acid groups and epoxy groups was demonstrated. The developed light scattering film based on thermosetting system indicated regularly structured nanomorphology, high light scattering rates of more than 3.9% at 300–600 nm of wavelength, and fast thermal cross-linking reaction at 150 °C and 60 s in thermosetting conditions for high productivity.
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85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Fabrication and characterization of a silicon metal-oxide-semiconductor based triple quantum dot

H. Pan, M. G. House, X. Hao, and H. W. Jiang

Appl. Phys. Lett. 100, 263109 (2012); http://dx.doi.org/10.1063/1.4731275 (5 pages)

Online Publication Date: 27 June 2012

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We fabricate electrostatically defined, few-electron triple quantum dot (TQD) devices in a silicon metal-oxide-semiconductor structure and obtain stability diagrams in the few-electron regime through charge detection by a nearby quantum point contact. We demonstrate the tunability of the TQD by achieving the quadruple points where all three dots are on resonance. The tuning evolutions are shown to be consistent with a constant interaction model. We identify quantum cellular automata phenomena near the quadruple point.
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85.35.Ds Quantum interference devices
85.30.Tv Field effect devices

Intense white luminescence in ZnTe embedded porous silicon

O. de Melo, C. de Melo, G. Santana, J. Santoyo, O. Zelaya-Angel, J. G. Mendoza-Álvarez, and V. Torres-Costa

Appl. Phys. Lett. 100, 263110 (2012); http://dx.doi.org/10.1063/1.4731276 (3 pages)

Online Publication Date: 27 June 2012

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Porous silicon layers were embedded with ZnTe using the isothermal close space sublimation technique. The presence of ZnTe was demonstrated using cross-sectional energy dispersive spectroscopy maps. ZnTe embedded samples present intense room temperature photoluminescence along the whole visible range. We ascribe this PL to ZnTe nanocrystals of different sizes grown on the internal pore surface. Such crystals, with different orientations and sizes, were observed in transmission electron microscopy images, while transmission electron diffraction images of the same regions reveal ZnTe characteristic patterns.
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78.55.Hx Other solid inorganic materials
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Understanding of the retarded oxidation effects in silicon nanostructures

C. D. Krzeminski, X.-L. Han (韩相磊), and G. Larrieu

Appl. Phys. Lett. 100, 263111 (2012); http://dx.doi.org/10.1063/1.4729410 (4 pages) | Cited 1 time

Online Publication Date: 27 June 2012

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In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings, and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires while predicting reasonable and physical stress levels at the silicon/silicon dioxide interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow.
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81.65.Mq Oxidation
62.20.fq Plasticity and superplasticity
68.35.Gy Mechanical properties; surface strains
68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
81.40.Lm Deformation, plasticity, and creep

Size dependent surface dissipation in thick nanowires

Behnam Gheshlaghi and Seyyed M. Hasheminejad

Appl. Phys. Lett. 100, 263112 (2012); http://dx.doi.org/10.1063/1.4732090 (4 pages) | Cited 3 times

Online Publication Date: 28 June 2012

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The Timoshenko [S. S. Rao, Vibration of Continuous Systems (Wiley, New York, 2007)] beam model is used to derive the differential equations governing the free vibrations of thick nanowires (NWs) with dissipative surface stress effects. The natural frequencies are calculated as functions of NW length as well as thickness-to-length ratio, with the effects of dissipation, transverse shear deformation, and rotary inertia being included. The effects of latter two parameters are significant especially for higher modes of vibration and shorter NWs and are different from what is naively expected based on elementary mechanics for some specific dimensions. The results are also compared with the previous study using Euler-Bernoulli beam theory.
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63.22.Gh Nanotubes and nanowires
81.07.Gf Nanowires
81.40.Lm Deformation, plasticity, and creep
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
62.20.F- Deformation and plasticity

Three-dimensional fabrication and characterisation of core-shell nano-columns using electron beam patterning of Ge-doped SiO2

Lionel C. Gontard, Joerg R. Jinschek, Haiyan Ou, Jo Verbeeck, and Rafal E. Dunin-Borkowski

Appl. Phys. Lett. 100, 263113 (2012); http://dx.doi.org/10.1063/1.4731765 (4 pages) | Cited 1 time

Online Publication Date: 28 June 2012

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A focused electron beam in a scanning transmission electron microscope (STEM) is used to create arrays of core-shell structures in a specimen of amorphous SiO2 doped with Ge. The same electron microscope is then used to measure the changes that occurred in the specimen in three dimensions using electron tomography. The results show that transformations in insulators that have been subjected to intense irradiation using charged particles can be studied directly in three dimensions. The fabricated structures include core-shell nano-columns, sputtered regions, voids, and clusters.
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81.16.Rf Micro- and nanoscale pattern formation
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
61.80.Fe Electron and positron radiation effects
61.43.Er Other amorphous solids
61.82.Rx Nanocrystalline materials
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Carrier localization in ZnO quantum wires

Philipp Kröger, Marcel Ruth, Nils Weber, and Cedrik Meier

Appl. Phys. Lett. 100, 263114 (2012); http://dx.doi.org/10.1063/1.4731767 (4 pages) | Cited 1 time

Online Publication Date: 28 June 2012

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ZnO quantum wires are grown on patterned silicon substrates using plasma-assisted molecular beam epitaxy. A crystallographic etch process exposes the Si(111) planes from Si(001) substrates so that V-grooves are formed. The large misfit between the Si(111) and ZnO(0001) lattice constants leads to low ZnO film quality after growth. Subsequent thermal annealing improves the electronic and structural quality of the film substantially. In the center region of the wire we find a strong photoluminescence intensity enhancement, which arises from carrier localization in the ZnO quantum wire. Two-dimensional self-consistent calculations of the electronic structure show excellent agreement with the experimental results.
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81.05.Dz II-VI semiconductors
81.65.Cf Surface cleaning, etching, patterning
78.67.Lt Quantum wires
78.55.Et II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.La Quantum wires (patterned in quantum wells)

Tuning electronic and magnetic properties of zigzag graphene nanoribbons by large-scale bending

Xiaohui Hu, Litao Sun, and Arkady V. Krasheninnikov

Appl. Phys. Lett. 100, 263115 (2012); http://dx.doi.org/10.1063/1.4731624 (4 pages) | Cited 1 time

Online Publication Date: 29 June 2012

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Using density-functional theory calculations, we show that the electronic and magnetic properties of zigzag graphene nanoribbons (ZGNRs) are highly sensitive to large scale curvature. As the curvature increases, the system experiences a transformation from the antiferromagnetic state to a nonmagnetic state and then back to the antiferromagnetic state. The energy gap first remains almost invariant and then decreases monotonically. The results demonstrate a facile strategy to tune the electronic and magnetic properties of ZGNRs, and furthermore provide an avenue to design versatile electronic and spin devices.
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75.75.-c Magnetic properties of nanostructures
75.50.Ee Antiferromagnetics
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
73.22.Pr Electronic structure of graphene
75.50.Tt Fine-particle systems; nanocrystalline materials
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
FREE

Carbon nanotube based ultra-low voltage integrated circuits: Scaling down to 0.4 V

Li Ding, Shibo Liang, Tian Pei, Zhiyong Zhang, Sheng Wang, Weiwei Zhou, Jie Liu, and Lian-Mao Peng

Appl. Phys. Lett. 100, 263116 (2012); http://dx.doi.org/10.1063/1.4731776 (5 pages) | Cited 4 times

Online Publication Date: 29 June 2012

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Carbon nanotube (CNT) based integrated circuits (ICs) including basic logic and arithmetic circuits were demonstrated working under a supply voltage low as 0.4 V, which is much lower than that used in conventional silicon ICs. The low limit of supply voltage of the CNT circuits is determined by the degraded noise margin originated from the process inducing threshold voltage fluctuation. The power dissipation of CNT ICs can be remarkably reduced by scaling down the supply voltage, and it is of crucial importance for the further developments of nanoelectronics ICs with higher integration density.
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85.35.Kt Nanotube devices
84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices

Nanodot to nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si(100)

J. C. Mahato, Debolina Das, R. R. Juluri, R. Batabyal, Anupam Roy, P. V. Satyam, and B. N. Dev

Appl. Phys. Lett. 100, 263117 (2012); http://dx.doi.org/10.1063/1.4731777 (5 pages) | Cited 2 times

Online Publication Date: 29 June 2012

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We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si(100) substrates. Nanodots of CoSi2 grow in the square shape following the four fold symmetry of the Si(100) substrate, up to a critical size of 67 × 67 nm2, where a shape transition takes place. Larger islands grow as nanowires with ever increasing length and the width decreasing to an asymptotic value of ∼25 nm. This produces long nanowires of nearly constant width. The endotaxial nanostructures grow into the Si substrate with a small extension above the surface.
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81.07.Gf Nanowires
68.55.A- Nucleation and growth
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
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