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25 Jun 2012

Volume 100, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 100, 261104 (2012); http://dx.doi.org/10.1063/1.4711253 (4 pages)

Marcelo Davanço, Jun Rong Ong, Andrea Bahgat Shehata, Alberto Tosi, Imad Agha, Solomon Assefa, Fengnian Xia, William M. J. Green, Shayan Mookherjea, and Kartik Srinivasan
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Intracavity and resonant Raman crystal fiber laser

Chien-Chih Lai, Chih-Peng Ke, Shih-Kun Liu, Chia-Yao Lo, Dong-Yo Jheng, Shih-Chang Wang, Si-Rong Lin, Pinghui S. Yeh, and Sheng-Lung Huang

Appl. Phys. Lett. 100, 261101 (2012); http://dx.doi.org/10.1063/1.4730949 (3 pages) | Cited 2 times

Online Publication Date: 25 June 2012

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We demonstrated an efficient, compact, and continuous-wave Raman crystal fiber laser (RCFL) using an intracavity and resonant χ(3) approach. The gain and nonlinear medium was Cr4+:Y3Al5O12 double-clad crystal fiber grown using the codrawing laser-heated pedestal growth technique. The RCFL threshold was only 50 mW, and the slope efficiency reached 14.3% above a pump power of 350 mW. The result is in good agreement with theory, which indicates a near-100% quantum efficiency of resonant stimulated Raman scattering.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.81.Bm Fabrication, cladding, and splicing

Nanophotonic detection of side-coupled nanomechanical cantilevers

V. T. K. Sauer, Z. Diao, M. R. Freeman, and W. K. Hiebert

Appl. Phys. Lett. 100, 261102 (2012); http://dx.doi.org/10.1063/1.4731210 (4 pages) | Cited 1 time

Online Publication Date: 25 June 2012

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A silicon nanophotonic Mach-Zehnder interferometer (MZI) is used to detect the mechanical resonance of a cantilever external to a nanophotonic waveguide. Small cantilever devices, below the cut-off for waveguide supported modes, are fabricated ∼140 nm away from one MZI arm. Cantilever resonant frequencies up to 60 MHz are measured with mechanical quality factors around 20 000 and signal to noise ratios up to 1000. Phase-locked loop frequency stability measurements indicate a mass sensitivity of 2 zg in an example cantilever of 0.5 pg mass. An interferometric transduction mechanism is confirmed, and the system is shown to work effectively in all-optical operation.
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42.79.-e Optical elements, devices, and systems
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
07.60.Ly Interferometers
06.30.Ft Time and frequency

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

J.-R. Chang, S.-P. Chang, Y.-J. Li, Y.-J. Cheng, K.-P. Sou, J.-K. Huang, H.-C. Kuo, and C.-Y. Chang

Appl. Phys. Lett. 100, 261103 (2012); http://dx.doi.org/10.1063/1.4731629 (4 pages) | Cited 1 time

Online Publication Date: 25 June 2012

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Core-shell InGaN/GaN multiple quantum wells (MQWs) on GaN nanopillars were fabricated by top-down etching followed by epitaxial regrowth. The regrowth formed hexagonal sidewalls and pyramids on the nanopillars. The cathodoluminescence of MQWs blue shifts as the location moves from top to bottom on both the pillar sidewalls and pyramid facets, covering a spectral linewidth of about 100 nm. The MQWs on the pillar sidewalls have a higher InN fraction than those on the pyramid facets. The photoluminescent wavelength is stable over two orders of carrier density change due to the smaller quantum confined Stark effect on the nanopillar facets.
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81.05.Ea III-V semiconductors
78.20.Jq Electro-optical effects
78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
78.67.De Quantum wells
81.07.St Quantum wells

Telecommunications-band heralded single photons from a silicon nanophotonic chip

Marcelo Davanço, Jun Rong Ong, Andrea Bahgat Shehata, Alberto Tosi, Imad Agha, Solomon Assefa, Fengnian Xia, William M. J. Green, Shayan Mookherjea, and Kartik Srinivasan

Appl. Phys. Lett. 100, 261104 (2012); http://dx.doi.org/10.1063/1.4711253 (4 pages) | Cited 7 times

Online Publication Date: 25 June 2012

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We demonstrate room temperature heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide produced a large four-wave-mixing nonlinearity coefficient γeff ≈ 4100 W−1 m−1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g(2)(0) = 0.19±0.03. The demonstration of a single photon source within a silicon platform holds promise for future integrated quantum photonic circuits.
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85.30.Tv Field effect devices
85.35.Ds Quantum interference devices

Effect of proton bombardment on InAs dots and wetting layer in laser structures

I. O’Driscoll, P. Blood, P. M. Smowton, A. Sobiesierski, and R. Gwilliam

Appl. Phys. Lett. 100, 261105 (2012); http://dx.doi.org/10.1063/1.4730964 (4 pages)

Online Publication Date: 26 June 2012

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The effect of proton bombardment on carrier lifetime and photoluminescence of InAs quantum dots was measured. Optical absorption and transmission electron microscopy show the dots retain their integrity under bombardment. A decrease in ground state photoluminescence with increasing dose is not explained by the decrease in dot carrier lifetime alone, but also by bombardment-induced non-radiative recombination in the wetting layer, which reduces the dot electron population at fixed excitation. To exploit the relative radiation immunity of quantum dots, it is necessary to maximise the dot density and capture probability per dot to minimize the effect of wetting layer recombination.
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78.67.Hc Quantum dots
81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
61.80.Jh Ion radiation effects
73.21.La Quantum dots
78.55.Cr III-V semiconductors

Optimal control of coherent anti-Stokes Raman scattering image contrast

Gero Bergner, Sebastian Schlücker, Bernd Kampe, Peter Dittrich, Benjamin Dietzek, and Jürgen Popp

Appl. Phys. Lett. 100, 261106 (2012); http://dx.doi.org/10.1063/1.4731205 (4 pages)

Online Publication Date: 26 June 2012

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Optimal control of coherent anti-Stokes Raman scattering (CARS) image contrast is reported. The setup combines an evolutionary strategy and a closed-loop feedback with a liquid-crystal spatial modulator to control the spectrum of the Stokes pulse within a CARS scheme to optimize the vibrational contrast of CARS images. The CARS excitation spectrum is optimized for image contrast at a pre-determined wavenumber position. The optimization feedback uses an image-contrast parameter generated from the image itself as the experimentally imposed fitness parameter. This strategy allows for enhancing the image contrast by a factor of up to 2.6.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.79.Hp Optical processors, correlators, and modulators
42.30.Va Image forming and processing
02.60.Pn Numerical optimization
07.05.Dz Control systems

In situ optofluidic control of reconfigurable photonic crystal cavities

Noud W. L. Speijcken, Mehmet A. Dündar, Alvaro Casas Bedoya, Christelle Monat, Christian Grillet, Peter Domachuk, Richard Nötzel, Benjamin J. Eggleton, and Rob W. van der Heijden

Appl. Phys. Lett. 100, 261107 (2012); http://dx.doi.org/10.1063/1.4732093 (5 pages) | Cited 3 times

Online Publication Date: 27 June 2012

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The mobile nature of fluids is fully exploited in planar photonic crystals to not only tune and reconfigure in situ optical microcavities, in a continuous and reversible manner, but also to create “a posteriori” spatially programmable cavities. Both the amount of liquid and the location of the selectively infiltrated area can be accurately controlled either mechanically, using a microfiber manipulator, or optically, using a laser-controlled evaporation and recondensation scheme. The wide applicability is illustrated by tuning a cavity resonance over 50 nm, adjusting the frequency splitting of an originally degenerate cavity mode, and by freely moving a liquid-induced cavity through dragging a microdroplet.
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42.70.Qs Photonic bandgap materials
42.79.-e Optical elements, devices, and systems
42.81.-i Fiber optics

Photoluminescence of boron nitride nanosheets exfoliated by ball milling

Lu Hua Li, Ying Chen, Bing-Ming Cheng, Meng-Yeh Lin, Sheng-Long Chou, and Yu-Chain Peng

Appl. Phys. Lett. 100, 261108 (2012); http://dx.doi.org/10.1063/1.4731203 (4 pages) | Cited 4 times

Online Publication Date: 27 June 2012

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The photoluminescence of boron nitride (BN) nanosheets exfoliated by ball milling method has been investigated. At room temperature, the nanosheets have strong deep ultraviolet (DUV) light emission at 224 nm and weak defect-related UV (∼300 nm) emission. The DUV peak profile slightly changes with the increase of milling time due to the increase of stacking faults caused by the shear force during milling. The decreased ∼300 nm emission after milling treatments has been attributed to the preferential orientation of the BN nanosheets on substrate and the strong polarization anisotropy of BN materials in luminescence.
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81.05.Ea III-V semiconductors
81.20.Wk Machining, milling
78.40.Fy Semiconductors
61.72.Nn Stacking faults and other planar or extended defects
78.55.Cr III-V semiconductors
81.16.-c Methods of micro- and nanofabrication and processing

Optically gated tunable terahertz filters

Stefan F. Busch, Steffen Schumann, Christian Jansen, Maik Scheller, Martin Koch, and Bernd M. Fischer

Appl. Phys. Lett. 100, 261109 (2012); http://dx.doi.org/10.1063/1.4729480 (3 pages)

Online Publication Date: 27 June 2012

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We present a fast and flexible terahertz filter based on diffractive gratings combined with an optically gated modulator. The terahertz radiation is diffracted by blazed gratings, and the individual frequency components are focused onto an optically excited semiconductor. Different light patterns are used to create free carriers in the bulk semiconductor material, leading to a spatial modulation of its transmission. This approach enables us to damp arbitrary frequencies and allows us to design and implement filters with almost any frequency response. By using the digital light processing technique, the switching time between different filter settings is as short as 16 ms.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
42.79.Dj Gratings
42.79.Hp Optical processors, correlators, and modulators

Hot electron extraction from CdTe quantum dots via beta carotene molecular energy levels

T. Pazhanivel, D. Nataraj, V. P. Devarajan, K. Senthil, M. Seol, and K. Yong

Appl. Phys. Lett. 100, 261110 (2012); http://dx.doi.org/10.1063/1.4730623 (5 pages)

Online Publication Date: 28 June 2012

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See Also: Publisher's Note

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We report our findings related to hot electron extraction from CdTe quantum dots, and we were able to do this by using beta carotene as an electron acceptor. Transient absorption spectra with two slow recovering negative bleaches at the absorption maximum of the molecule and quantum dot have indicated the slowing down of cooling process and the existence of hot carriers in this hybrid system.
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78.67.Hc Quantum dots
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
72.20.Ht High-field and nonlinear effects
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors

Gain measurements of scattering-assisted terahertz quantum cascade lasers

David Burghoff, Chun Wang Ivan Chan, Qing Hu, and John L. Reno

Appl. Phys. Lett. 100, 261111 (2012); http://dx.doi.org/10.1063/1.4732518 (4 pages) | Cited 4 times

Online Publication Date: 29 June 2012

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Using terahertz time-domain spectroscopy, the gain of scattering-assisted terahertz quantum cascade lasers is measured. By examining the intersubband gain and absorption over a wide range of bias voltages, we experimentally detect energy anticrossings—revealing information about the mechanism of laser action—and compare the resonant-tunneling injection scheme to the scattering-assisted injection scheme. The temperature performance of the gain medium is also measured and discussed, and an additional intersubband transition is identified that contributes to scattering-assisted lasing action at high temperatures.
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42.55.Px Semiconductor lasers; laser diodes
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
42.25.Bs Wave propagation, transmission and absorption
42.25.Fx Diffraction and scattering

Sampled grating, distributed feedback quantum cascade lasers with broad tunability and continuous operation at room temperature

S. Slivken, N. Bandyopadhyay, S. Tsao, S. Nida, Y. Bai, Q. Y. Lu, and M. Razeghi

Appl. Phys. Lett. 100, 261112 (2012); http://dx.doi.org/10.1063/1.4732801 (4 pages) | Cited 3 times

Online Publication Date: 29 June 2012

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A dual-section, single-mode quantum cascade laser is demonstrated in continuous wave at room temperature with up to 114 nm (50 cm−1) of tuning near a wavelength of 4.8 μm. Power above 100 mW is demonstrated, with a mean side mode suppression ratio of 24 dB. By changing the grating period, 270 nm (120 cm−1) of gap-free electrical tuning for a single gain medium has been realized.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.79.Dj Gratings
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