APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

9 Jan 2012

Volume 100, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 023701 (2012); http://dx.doi.org/10.1063/1.3673335 (3 pages)

Biswarup Pathak, Henrik Löfås, Jariyanee Prasongkit, Anton Grigoriev, Rajeev Ahuja, and Ralph H. Scheicher
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Heng-Sheng Huang, Piyas Samanta, Tsung-Jian Tzeng, Shuang-Yuan Chen, and Chuan-Hsi Liu

Appl. Phys. Lett. 100, 023501 (2012); http://dx.doi.org/10.1063/1.3675454 (4 pages) | Cited 1 time

Online Publication Date: 9 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The kinetics of zero-field and field-induced detrapping of electrons trapped in HfSixOy and HfSiON after positive bias stress on n+-polycrystalline silicon (polySi) gate of n-type metal-oxide-semiconductor (nMOS) capacitors are experimentally investigated. The self detrapping follows a simple logarithmic relation with time while field-induced detrapping upon reversing the stress voltage obeys a simple first-order exponential decay suggesting mono energetic shallow traps associated with tunnel emission of trapped electrons. Finally, our investigation raises questions about the validity of the widely used distributed capture cross section model of electron traps to explain the threshold voltage instability in MOS devices with hafnium silicate gate stacks.
Show PACS
84.32.Tt Capacitors

Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes

S. Chandramohan, Ji Hye Kang, Y. S. Katharria, Nam Han, Yun Seon Beak, Kang Bok Ko, Jong Bae Park, Hyun Kyu Kim, Eun-Kyung Suh, and Chang-Hee Hong

Appl. Phys. Lett. 100, 023502 (2012); http://dx.doi.org/10.1063/1.3675631 (4 pages) | Cited 13 times

Online Publication Date: 9 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports on the implementation of multilayer graphene (MLG) as a current spreading electrode in GaN-based blue light-emitting diodes. We demonstrate two facile strategies to maneuver the electrical coupling between p-GaN layer and MLG. Using a work-function-tuned MLG and a thin gold (Au) metal interlayer, the current spreading and thus the device forward voltage are considerably improved. We attribute these improvements to the diminution in work function difference between p-GaN and MLG, the decrease of specific contact resistance, and the enhancement in the conductivity of MLG film as a result of doping. In addition, rapid thermal annealing at elevated temperature is found to provide additional pathway for enhanced carrier injection.
Show PACS
85.60.Jb Light-emitting devices
61.72.Cc Kinetics of defect formation and annealing
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential

Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

R. M. Jock, S. Shankar, A. M. Tyryshkin, Jianhua He, K. Eng, K. D. Childs, L. A. Tracy, M. P. Lilly, M. S. Carroll, and S. A. Lyon

Appl. Phys. Lett. 100, 023503 (2012); http://dx.doi.org/10.1063/1.3675862 (3 pages) | Cited 2 times

Online Publication Date: 9 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.
Show PACS
85.30.Tv Field effect devices

Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

Masaki Hashimoto, Kensaku Kanomata, Katsuaki Momiyama, Shigeru Kubota, and Fumihiko Hirose

Appl. Phys. Lett. 100, 023504 (2012); http://dx.doi.org/10.1063/1.3675863 (3 pages)

Online Publication Date: 9 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 °C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm2/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.
Show PACS
06.30.Ka Basic electromagnetic quantities
61.72.Mm Grain and twin boundaries
72.20.Fr Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices
88.40.jj Silicon solar cells

Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells

John R. Jameson, Nad Gilbert, Foroozan Koushan, Juan Saenz, Janet Wang, Shane Hollmer, and Michael Kozicki

Appl. Phys. Lett. 100, 023505 (2012); http://dx.doi.org/10.1063/1.3675870 (4 pages) | Cited 2 times

Online Publication Date: 9 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Cooperative ionic motion is identified as a key physical effect influencing the programming kinetics of Ag/GeS2/W conductive-bridge memory cells. Cooperative effects are suggested to cause the time required to program virgin cells to: (i) deviate from the exponential voltage dependence typically observed at high voltage if the GeS2 is very thin and (ii) increase dramatically at low voltage when programmed with a pulse train having a low duty cycle. A previously reported model is shown to account for both phenomena, and a kinetic Monte Carlo algorithm is described for making quantitative calculations.
Show PACS
84.30.Sk Pulse and digital circuits
02.70.Uu Applications of Monte Carlo methods

Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Jaewook Jeong, Joonwoo Kim, Gwang Jun Lee, and Byeong-Dae Choi

Appl. Phys. Lett. 100, 023506 (2012); http://dx.doi.org/10.1063/1.3675876 (4 pages) | Cited 2 times

Online Publication Date: 10 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μFEi) and parasitic resistance in source (Rs) and drain (Rd) electrodes was performed especially for low VGS and VDS conditions. The resulting μFEi showed typical VGS dependency of amorphous semiconductor TFTs. However, Rs and Rd showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.
Show PACS
85.30.Tv Field effect devices

Long-term retention in organic ferroelectric-graphene memories

Santosh Raghavan, Igor Stolichnov, Nava Setter, Jean-Savin Heron, Mahmut Tosun, and Andras Kis

Appl. Phys. Lett. 100, 023507 (2012); http://dx.doi.org/10.1063/1.3676055 (3 pages) | Cited 4 times

Online Publication Date: 11 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Long-term stability of high- and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully saturated time-dependence of the graphene channel resistance. This behavior is in contrast with ferroelectric-polymer-gated silicon field-effect-transistors, where the gap between the two memory states continuously decreases with time. Before reaching saturation, the current decays exponentially as predicted by the retention model based on the charge injection into the interface-adjacent layer. The drain current saturation attests to a high quality of the graphene/ferroelectric interface with low density of charge traps.
Show PACS
84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
85.50.Gk Non-volatile ferroelectric memories

Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3

W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu

Appl. Phys. Lett. 100, 023508 (2012); http://dx.doi.org/10.1063/1.3675849 (3 pages)

Online Publication Date: 11 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
With Al2O3 passivation on the surface of Cu(In,Ga)Se2, the integrated photoluminescence intensity can achieve two orders of magnitude enhancement due to the reduction of surface recombination velocity. The photoluminescence intensity increases with increasing Al2O3 thickness from 5 nm to 50 nm. The capacitance-voltage measurement indicates negative fixed charges in the film. Based on the first principles calculations, the deposition of Al2O3 can only reduce about 35% of interface defect density as compared to the unpassivated Cu(In,Ga)Se2. Therefore, the passivation effect is mainly caused by field effect where the surface carrier concentration is reduced by Coulomb repulsion.
Show PACS
81.65.Rv Passivation
61.72.-y Defects and impurities in crystals; microstructure
68.35.Ct Interface structure and roughness
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
78.55.Hx Other solid inorganic materials

Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination

C. J. Cochrane, P. M. Lenahan, and A. J. Lelis

Appl. Phys. Lett. 100, 023509 (2012); http://dx.doi.org/10.1063/1.3675857 (3 pages) | Cited 5 times

Online Publication Date: 11 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.
Show PACS
85.30.Tv Field effect devices

Solid polyelectrolyte-gated surface conductive diamond field effect transistors

M. Dankerl, M. Tosun, M. Stutzmann, and J. A. Garrido

Appl. Phys. Lett. 100, 023510 (2012); http://dx.doi.org/10.1063/1.3676662 (3 pages) | Cited 2 times

Online Publication Date: 12 January 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Solid polyelectrolytes have been used in transistor devices to achieve gating with high capacitance. We use a solid polyethylene oxide/LiClO4 electrolyte to replace aqueous electrolytes as a gate for surface-conductive diamond field-effect transistors (FET). The resulting transistor shows characteristics comparable to those of aqueous electrolyte-gated diamond FETs. We investigate the polyelectrolyte/diamond interface with impedance spectroscopy and cyclic voltammetry, showing the electrochemical stability of the interface and capacitive gating up to 100 Hz. Hall effect measurements on the polyelectrolyte-gated devices are compared to those with liquid gates. The solid and transparent polyelectrolyte gates promise further applications for surface-conductive diamond FETs.
Show PACS
85.30.Tv Field effect devices
82.45.Gj Electrolytes
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close