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9 Jan 2012

Volume 100, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 100, 023701 (2012); http://dx.doi.org/10.1063/1.3673335 (3 pages)

Biswarup Pathak, Henrik Löfås, Jariyanee Prasongkit, Anton Grigoriev, Rajeev Ahuja, and Ralph H. Scheicher
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Ambient effects on electric-field-induced local charge modification of TiO2

Haeri Kim, Seungbum Hong, and Dong-Wook Kim

Appl. Phys. Lett. 100, 022901 (2012); http://dx.doi.org/10.1063/1.3675630 (4 pages) | Cited 3 times

Online Publication Date: 9 January 2012

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We investigated the surface potential of TiO2 single crystals using scanning probe microscopy (SPM) under different gas environment. The SPM tip-induced electrical stress resulted in reversal in the surface potential, Vsurf, polarity only in H2/Ar (ΔVsurf = 0.30 eV) and not in Ar and O2. Quantitative measurement of the influence of ambient gas on the surface potential led us to develop a model where the adsorbed oxygen molecules and oxygen vacancies interact to change their relative concentration leading to different surface potential in TiO2. These results will give us insights into ambient-dependent physical phenomena in oxide thin film nanostructures.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
61.72.jd Vacancies

Ferroelectric phase transition in strained multiferroic (Bi0.9La0.1)2NiMnO6 thin films

E. Langenberg, I. Fina, P. Gemeiner, B. Dkhil, L. Fàbrega, M. Varela, and J. Fontcuberta

Appl. Phys. Lett. 100, 022902 (2012); http://dx.doi.org/10.1063/1.3675869 (3 pages) | Cited 1 time

Online Publication Date: 9 January 2012

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We report here temperature-dependent x-ray structural and Raman spectroscopy data, on the ferromagnetic double-perovskite (Bi0.9La0.1)2NiMnO6 epitaxial thin films. Results indicate a ferroelectric transition occurring at about 450 °C. Low-temperature polarization loops allow to clearly observing polarization switching, thus confirming the multiferroic character of this oxide, and indicate a lower bound of about 6 μC/cm2.
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77.80.B- Phase transitions and Curie point
77.80.Fm Switching phenomena
78.30.Hv Other nonmetallic inorganics

Ultra-wideband surface acoustic wave resonator employing Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals

Jing Chen, Jiansong Liu, Ken-ya Hashimoto, Tatsuya Omori, Changjun Ahn, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 100, 022903 (2012); http://dx.doi.org/10.1063/1.3675908 (3 pages) | Cited 2 times

Online Publication Date: 9 January 2012

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Theoretical analysis showed that high performance surface acoustic wave (SAW) resonator with an extremely large electromechanical coupling factor K2 could be realized on Y cut X propagating Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (YX-PIN-PMN-PT) substrate. A one-port SAW resonator was designed, fabricated, and characterized on Cu-grating/YX-PIN-PMN-PT substrate structure. The experimental results demonstrate that very large K2 of 57.3% is realizable. Such an extremely large K2 makes PIN-PMN-PT single crystal great potential for realizing wideband SAW filters and tunable SAW filters. The influence of inhomogeneity and instability of the domain structure on the fabricated resonators has been discussed thoroughly for further improvement of the devices.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Silicon introduced effect on resistive switching characteristics of WOX thin films

Yong-En Syu, Ting-Chang Chang, Tsung-Ming Tsai, Geng-Wei Chang, Kuan-Chang Chang, Ya-Hsiang Tai, Ming-Jinn Tsai, Ying-Lang Wang, and Simon M. Sze

Appl. Phys. Lett. 100, 022904 (2012); http://dx.doi.org/10.1063/1.3676194 (4 pages) | Cited 3 times

Online Publication Date: 10 January 2012

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The switching layer with Si interfusion is investigated to improve the electrical characteristics of WOX resistance random access memory (RRAM). The WOX has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WOX-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WOX resistance switching layer because the tungsten filament path is limited by SiOX in the WSiOX film during the forming process.
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84.30.Sk Pulse and digital circuits

Second-harmonic generation in a periodically poled congruent LiTaO3 sample with phase-tuned nonlinear Cherenkov radiation

Huang Huang, Cheng-Ping Huang, Chao Zhang, Ding Zhu, Xu-Hao Hong, Jun Lu, Jian Jiang, Qian-Jin Wang, and Yong-Yuan Zhu

Appl. Phys. Lett. 100, 022905 (2012); http://dx.doi.org/10.1063/1.3676440 (3 pages) | Cited 3 times

Online Publication Date: 10 January 2012

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Second harmonic generation (SHG) in a two-dimensional periodically poled congruent LiTaO3 crystal was investigated experimentally. Multiple conical and dotted SHG have been observed, which features phase-tuned Cherenkov radiation, elastic scattering quasi-phase matching process, and random phase matching process. These results are closely connecting with the domain structure and can be utilized as characterization methods for practical purposes.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Qs Photonic bandgap materials

Reentrant dipole glass properties in (1 − x)BaTiO3 − xBiScO3, 0.1 ≤ x ≤ 0.4

S. S. N. Bharadwaja, S. Trolier-McKinstry, L. E. Cross, and C. A. Randall

Appl. Phys. Lett. 100, 022906 (2012); http://dx.doi.org/10.1063/1.3675861 (3 pages) | Cited 3 times

Online Publication Date: 11 January 2012

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Dielectrics that provide higher electrostatic energy densities are urgently required for power electronic applications; recent observations in the solid solution of (1 − x)BaTiO3 − xBiScO3 show promise, and low temperature re-entrant dipole glass behavior is inferred. Here, direct observations of switchable polarization freezing in the reentrant dipole-glass (1 − x)BaTiO3 − xBiScO3, 0.1 ≤ x ≤ 0.4 are reported. As the temperature is decreased, the switchable polarization increases rapidly, reaches a maximum value at the reentrant temperature (TR) before disappearing at low temperatures. With measurement electric field (E), the TR is found to increase in (1 − x)BaTiO3 − xBiScO3, 0.1 ≤ x ≤ 0.4, as a function of x.
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64.70.ph Nonmetallic glasses (silicates, oxides, selenides, etc.)
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
81.05.Pj Glass-based composites, vitroceramics
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Modified Johnson model for ferroelectric lead lanthanum zirconate titanate at very high fields and below Curie temperature

Manoj Narayanan, Sheng Tong, Beihai Ma, Shanshan Liu, and Uthamalingam Balachandran

Appl. Phys. Lett. 100, 022907 (2012); http://dx.doi.org/10.1063/1.3676668 (3 pages) | Cited 4 times

Online Publication Date: 11 January 2012

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A modified Johnson model is proposed to describe the nonlinear field dependence of the dielectric constant (ɛ-E loop) in ferroelectric materials below the Curie temperature. This model describes the characteristic ferroelectric “butterfly” shape observed in typical ɛ-E loops. The predicted nonlinear behavior agreed well with the measured values in both the low- and high-field regions for lead lanthanum zirconate titanate films. The proposed model was also validated at different temperatures below the ferroelectric-to-paraelectric Curie point. The anharmonic coefficient in the model decreased from 6.142 × 10−19 cm2/V2 to 2.039 × 10−19 cm2/V2 when the temperature increased from 25 °C to 250 °C.
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77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.84.Cg PZT ceramics and other titanates

Temperature-driven evolution of hierarchical nanodomain structure in tetragonal-like BiFeO3 films

Yajun Qi, Zuhuang Chen, Lihua Wang, Xiaodong Han, Junling Wang, Thirumany Sritharan, and Lang Chen

Appl. Phys. Lett. 100, 022908 (2012); http://dx.doi.org/10.1063/1.3676192 (4 pages) | Cited 2 times

Online Publication Date: 12 January 2012

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Transmission electron microscopy study of tetragonal-like BiFeO3 films reveals a hitherto unreported hierarchical nanodomain structure. The 30-50 nm wide stripe domains with {110} domain walls consist of a substructure of lamellar nanodomains of 8-10 nm width in a herringbone-like arrangement. In situ heating and cooling reveal a reversible transition from the hierarchical nanodomain structure to a tweed-like domain structure which is accompanied by a first-order phase transition near 120 °C with a thermal hysteresis.
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68.55.-a Thin film structure and morphology
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
64.70.K- Solid-solid transitions
68.37.Lp Transmission electron microscopy (TEM)

Reduced leakage current, enhanced ferroelectric and dielectric properties in (Ce,Fe)-codoped Na0.5Bi0.5TiO3 film

C. H. Yang, G. D. Hu, W. B. Wu, H. T Wu, F. Yang, Z. Y. Lu, and L. Wang

Appl. Phys. Lett. 100, 022909 (2012); http://dx.doi.org/10.1063/1.3676663 (3 pages) | Cited 4 times

Online Publication Date: 13 January 2012

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Na0.5Bi0.5TiO3 (NBT), Ce-doped NBT (NBTCe), Fe-doped NBT (NBTFe), and (Ce,Fe)-codoped NBT (NBTCeFe) thin films were fabricated on LaNiO3(100)/Si substrates by metal organic decomposition. The leakage current density of NBTCeFe at 500 kV/cm is reduced by approximately two orders of magnitude by reducing the density of oxygen vacancies and forming the defect complexes, compared with NBT film. Enhanced ferroelectricity is achieved in NBTCeFe with a large remanent polarization of 24 μC/cm2 due to the reduced leakage current, extra A-site vacancies, and lattice distortion. The NBTCeFe also exhibits a dielectric constant of 585 and dielectric loss of 0.05 at 10 kHz.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
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