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9 Jan 2012

Volume 100, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 023701 (2012); http://dx.doi.org/10.1063/1.3673335 (3 pages)

Biswarup Pathak, Henrik Löfås, Jariyanee Prasongkit, Anton Grigoriev, Rajeev Ahuja, and Ralph H. Scheicher
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Electric field induced magnetization rotation in patterned Ni ring/Pb(Mg1/3Nb2/3)O3](1−0.32)-[PbTiO3]0.32 heterostructures

Joshua L. Hockel, Alexandre Bur, Tao Wu, Kyle P. Wetzlar, and Gregory P. Carman

Appl. Phys. Lett. 100, 022401 (2012); http://dx.doi.org/10.1063/1.3675458 (3 pages) | Cited 3 times

Online Publication Date: 9 January 2012

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Electric field induced magnetoelastic anisotropy is shown to rotate the magnetization of a ring-shaped magnet by 90° in a Ni ring/(011) Pb(Mg1/3Nb2/3)O3](1−0.32)-[PbTiO3]0.32 heterostructure. The 2000 nm diameter ring is initially field annealed forming the “onion” magnetization state. A 0.8 MV/m electric field is applied to the substrate creating anisotropic piezostrain and a perpendicular in-plane easy axis. Magnetic force microscopy confirms the 90° rotation of the vortex-type domain walls from the field annealing direction. Rotations are stable without electric field due to remnant strains induced during the poling process, supporting the viability of strain-based magnetic recording methods.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ch Domain walls and domain structure
77.22.Ej Polarization and depolarization

All-oxide system for spin pumping

Z. Qiu, Y. Kajiwara, K. Ando, Y. Fujikawa, K. Uchida, T. Tashiro, K. Harii, T. Yoshino, and E. Saitoh

Appl. Phys. Lett. 100, 022402 (2012); http://dx.doi.org/10.1063/1.3675463 (3 pages) | Cited 2 times

Online Publication Date: 9 January 2012

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In a simple all-oxide system, spin pumping driven by spin wave resonances have been investigated by using the inverse spin-Hall effect (ISHE). In a lanthanum doped yttrium iron garnet (La:YIG)/indium tin oxide (ITO) bilayer film, the spin pumping generates and injects a spin current into the ITO layer, and an electromotive force signal is observed via the ISHE. The electromotive forces were measured depend on the out-of-plane magnetic-field-angle and the microwave excitation power, which were consistent with the theoretical prediction of the ISHE. The realization of the all-oxide spin pumping system extends possibilities for the oxide spintronics.
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72.25.Dc Spin polarized transport in semiconductors
72.25.-b Spin polarized transport
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
68.65.Ac Multilayers
73.21.Ac Multilayers
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Tuning of magnetization relaxation in ferromagnetic thin films through seed layers

Lei Lu, Jared Young, Mingzhong Wu, Christoph Mathieu, Matthew Hadley, Pavol Krivosik, and Nan Mo

Appl. Phys. Lett. 100, 022403 (2012); http://dx.doi.org/10.1063/1.3675614 (3 pages) | Cited 3 times

Online Publication Date: 9 January 2012

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Tuning of the magnetization relaxation in Fe65Co35 thin films via seed layers was demonstrated. Through the use of different types of seed layers, one can tune substantially both the magnitude and frequency dependence of the relaxation rate η of the film. This tuning relies on the change of the film grain properties with the seed layer and the correlation between grain properties and two-magnon scattering processes. In spite of a significant change of η with the seed layer, the film static magnetic properties remain relatively constant.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.30.Ds Spin waves
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.50.Bb Fe and its alloys

Ultrasensitive anomalous Hall effect in SiO2/Fe-Pt/SiO2 sandwich structure films

Y. M. Lu, J. W. Cai, H. Y. Pan, and Li Sun

Appl. Phys. Lett. 100, 022404 (2012); http://dx.doi.org/10.1063/1.3672046 (4 pages) | Cited 2 times

Online Publication Date: 10 January 2012

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Ultrasensitive anomalous Hall effect has been demonstrated in a SiO2/Fe-Pt/SiO2 sandwich structure. Owing to the interfacial electron scattering, the Hall resistivity is appreciably enhanced for the thin Fe-Pt layers of high quality; meanwhile, a large interfacial anisotropy is formed and further enhanced through annealing, leading to a room temperature Hall slope up to 2160 μΩ cm/T and field sensitivity of 12 000 Ω/T at Fe-Pt thickness ∼1.8 nm. This number is an order magnitude higher than the best semiconductor sensitivity. Other important technical characteristics, such as electrical resistivity and temperature coefficient, are also suitable to practical magnetic Hall sensor development.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Ns Metal-nonmetal contacts
81.40.Gh Other heat and thermomechanical treatments
73.61.-r Electrical properties of specific thin films

Thickness-dependent voltage-modulated magnetism in multiferroic heterostructures

Li Shu, Zheng Li, Jing Ma, Ya Gao, Lin Gu, Yang Shen, Yuanhua Lin, and C. W. Nan

Appl. Phys. Lett. 100, 022405 (2012); http://dx.doi.org/10.1063/1.3675868 (4 pages) | Cited 5 times

Online Publication Date: 10 January 2012

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The voltage-modulated magnetic behavior in multiferroic Ni/BaTiO3 heterostructures grown on SrTiO3 single crystal substrate was observed by the magneto-optical Kerr effect measurement in an AC modulation technique with synchronizing the frequency of the Kerr signal detector to the low-frequency AC actuation voltage. The results showed coexistence at room-temperature of two magnetoelectric (ME) mechanisms, i.e., strain- and interface charge-mediated couplings. The interaction between the different ME couplings leads to a remarkable thickness-dependent voltage modulation of the magnetic behavior.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.20.Ls Magneto-optical effects
75.85.+t Magnetoelectric effects, multiferroics

Antiferromagnetic coupling across silicon regulated by tunneling currents

R. R. Gareev, M. Schmid, J. Vancea, C. H. Back, R. Schreiber, D. Bürgler, C. M. Schneider, F. Stromberg, and H. Wende

Appl. Phys. Lett. 100, 022406 (2012); http://dx.doi.org/10.1063/1.3675872 (3 pages)

Online Publication Date: 10 January 2012

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We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons.
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73.40.Ns Metal-nonmetal contacts
75.50.Ee Antiferromagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.20.Ht High-field and nonlinear effects
72.20.My Galvanomagnetic and other magnetotransport effects
72.25.-b Spin polarized transport

Direct observation of magnetic phase coexistence and magnetization reversal in a Gd0.67Ca0.33MnO3 thin film

Jeehoon Kim, N. Haberkorn, Leonardo Civale, Evgeny Nazaretski, Paul Dowden, Avadh Saxena, J. D. Thompson, and Roman Movshovich

Appl. Phys. Lett. 100, 022407 (2012); http://dx.doi.org/10.1063/1.3676045 (4 pages) | Cited 1 time

Online Publication Date: 11 January 2012

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We have investigated the ferrimagnetic domain structure in a Gd0.67Ca0.33MnO3 thin film using magnetic force microscopy. We observe clear signs of phase separation, with magnetic islands embedded in a non-magnetic matrix. We also directly visualize the reversal of magnetization of ferrimagnetic domains as a function of temperature and attribute it to a change in the balance of magnetization of anti-aligned Mn and Gd sublattices.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Gg Ferrimagnetics
75.60.Jk Magnetization reversal mechanisms
75.70.Ak Magnetic properties of monolayers and thin films

Magnetic and transport properties of Mn3−xGa/MgO/Mn3−xGa magnetic tunnel junctions: A first-principles study

Zhaoqiang Bai, Yongqing Cai, Lei Shen, Ming Yang, Viloane Ko, Guchang Han, and Yuanping Feng

Appl. Phys. Lett. 100, 022408 (2012); http://dx.doi.org/10.1063/1.3676195 (5 pages) | Cited 6 times

Online Publication Date: 11 January 2012

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Magnetic and transport properties of Mn3−xGa/MgO/Mn3−xGa (0 ≤ x ≤ 1) magnetic tunnel junctions are studied using first-principles approach based on density functional theory and non-equilibrium Green’s function. Perpendicular magnetization, of which the magnetic anisotropy energy reaches more than 1 meV/unit-cell, is confirmed to be energetically favoured by both Mn2Ga and Mn3Ga thin films. Furthermore, despite high spin-polarization at the Fermi energy for both these compounds as reported, our transport calculation shows considerable disparity in the transmission behaviour between Mn2Ga/MgO/Mn2Ga(001) and Mn3Ga/MgO/Mn3Ga(001) magnetic tunnel junctions: huge optimistic tunneling magnetoresistance ratio of 103% for the former, and nevertheless, no tunneling magnetoresistance effect absolutely for the latter. This phenomenon is attributed to the symmetry selective filtering effect of the MgO spacer. On this premise, Mn3−xGa compounds with low Mn concentration are predicted to be promising candidate materials to serve as the electrodes of spin-transfer torque devices in the next-generation data storage technique.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.76.+j Spin transport effects
72.25.-b Spin polarized transport
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.30.Gw Magnetic anisotropy

Towards compact three-dimensional magnetoelectronics—Magnetoresistance in rolled-up Co/Cu nanomembranes

C. Müller, C. C. Bof Bufon, M. E. Navarro Fuentes, D. Makarov, D. H. Mosca, and O. G. Schmidt

Appl. Phys. Lett. 100, 022409 (2012); http://dx.doi.org/10.1063/1.3676269 (4 pages) | Cited 3 times

Online Publication Date: 11 January 2012

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Strain engineering combined with standard top-down techniques is shown to be eligible to fabricate compact three dimensional architectures based on rolled-up Co/Cu nanomembranes. The fabrication process is fully integrative and provides rolled-up tubes of high quality and yield (∼95%). Rolled-up tubes with two windings show magnetoresistances (MR) ∼20% higher than those observed in thin films. The enhancement of magnetoresistance is most likely due to the coupling between neighboring windings, variations of the Cu layer thickness, and increased effective area crossed by current lines in the film plane. Present results inhere new potential for magnetic sensing and electronic components.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Ak Magnetic properties of monolayers and thin films
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.75.Cd Fabrication of magnetic nanostructures
68.65.Ac Multilayers
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