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9 Jan 2012

Volume 100, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 023701 (2012); http://dx.doi.org/10.1063/1.3673335 (3 pages)

Biswarup Pathak, Henrik Löfås, Jariyanee Prasongkit, Anton Grigoriev, Rajeev Ahuja, and Ralph H. Scheicher
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High-performance short channel organic transistors using densely aligned carbon nanotube array electrodes

Biddut K. Sarker and Saiful I. Khondaker

Appl. Phys. Lett. 100, 023301 (2012); http://dx.doi.org/10.1063/1.3675639 (4 pages) | Cited 3 times

Online Publication Date: 9 January 2012

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We report high-performance short channel pentacene field effect transistor (FET) using carbon nanotube aligned array electrodes. The devices show field effect mobility of up to 0.65 cm2/Vs and current on-off ratio of up to 1.7 × 106, which is the best for sub-micron pentacene FETs. The calculated cutoff frequency (fc) of the devices is up to 211 MHz which is among the best reported fc for organic transistors. The high performance of our short channel FET is attributed to improved charge injections from the aligned array carbon nanotube electrodes into the pentacene.
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85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

A. Sleiman, M. C. Rosamond, M. Alba Martin, A. Ayesh, A. Al Ghaferi, A. J. Gallant, M. F. Mabrook, and D. A. Zeze

Appl. Phys. Lett. 100, 023302 (2012); http://dx.doi.org/10.1063/1.3675856 (4 pages) | Cited 2 times

Online Publication Date: 9 January 2012

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A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 1011 cm−2) and demonstrated 94% charge retention due to the superior encapsulation.
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85.30.Tv Field effect devices
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Effect of different electrodes on Fano resonance in molecular devices

Changfeng Fang, Dongmei Li, Bin Cui, Yuqing Xu, Guomin Ji, and Desheng Liu

Appl. Phys. Lett. 100, 023303 (2012); http://dx.doi.org/10.1063/1.3676190 (4 pages)

Online Publication Date: 10 January 2012

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By using nonequilibrium Green’s function in combination with density functional theory, we study the electronic transport properties of two typical π-conjugated molecules (dithiol-benzene and C4S2), sandwiched between two metallic electrodes made of different metals. The presence of two different electrodes leads to Fano resonances at certain energy. As a consequence, electronic transport in future molecular electric circuits can be substantially affected when the molecular devices placed between electrodes with different chemical potentials. The Fano line shapes reveal that there is nonresonant channel when two asymmetric electrodes are employed.
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85.65.+h Molecular electronic devices
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Excellent carrier mobility of 0.24 cm2/Vs in regioregular poly(3-hexylthiophene) based field-effect transistor by employing octadecyltrimethoxysilane treated gate insulator

Yi-Da Jiang, Tzu-Hao Jen, and Show-An Chen

Appl. Phys. Lett. 100, 023304 (2012); http://dx.doi.org/10.1063/1.3676444 (4 pages) | Cited 2 times

Online Publication Date: 11 January 2012

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The polymer field-effect transistor based on regioregular poly(3-hexylthiophene) (rr-P3HT) with excellent field-effect mobility up to 0.24 cm2/V s is demonstrated by spin-coating rr-P3HT onto octadecyltrimethoxysilane treated gate insulator followed by thermal annealing of rr-P3HT at 180 °C. This mobility is practically applicable in driving circuits of liquid crystal displays (greater than 0.1 cm2/V s) and close to the highest reported value (0.28 cm2/V s) for rr-P3HT but there a different coating method or dual dielectric layers was used. This impressive mobility can be attributed to the increase in structural ordering of rr-P3HT molecules as supported by x-ray diffraction measurement.
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85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
81.40.Tv Optical and dielectric properties related to treatment conditions
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Remanent polarization in a cryptand-polyanion bilayer implemented in an organic field effect transistor

Xiaodong Wang, Ari Laiho, Magnus Berggren, and Xavier Crispin

Appl. Phys. Lett. 100, 023305 (2012); http://dx.doi.org/10.1063/1.3677663 (3 pages)

Online Publication Date: 11 January 2012

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We investigate the possibility to maintain an electric polarization in an organic bilayer via ion trapping, i.e., without any external bias. In the cryptand-polyanion bilayer, ions of specific size can be strongly coordinated with organic macrocyclic molecules. Cations move from the polyanion layer to the cryptand layer upon applying a bias and are trapped in this layer. As a result, the voltage dependence of the polarization displays a hysteresis. The bilayer is then advantageously used as an electronic insulating layer in an organic field effect transistor. The ions trapping and de-trapping can be followed by the amplitude of the threshold voltage (Vth) shift as well as its temporal evolution.
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85.30.Tv Field effect devices
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Local charge transfer doping in suspended graphene nanojunctions

Jeffrey H. Worne, Hemtej Gullapalli, Charudatta Galande, Pulickel M. Ajayan, and Douglas Natelson

Appl. Phys. Lett. 100, 023306 (2012); http://dx.doi.org/10.1063/1.3677686 (4 pages) | Cited 1 time

Online Publication Date: 11 January 2012

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We report electronic transport measurements in nanoscale graphene transistors with gold and platinum electrodes whose channel lengths are shorter than 100 nm and compare them with transistors with channel lengths from 1 μm to 50 μm. We find a large positive gate voltage shift in charge neutrality point (NP) for transistors made with platinum electrodes but negligible shift for devices made with gold electrodes. This is consistent with the transfer of electrons from graphene into the platinum electrodes. As the channel length increases, the disparity between the measured NP using gold and platinum electrodes disappears.
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85.65.+h Molecular electronic devices
85.30.-z Semiconductor devices
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Organic photovoltaic cells based on unconventional electron donor fullerene and electron acceptor copper hexadecafluorophthalocyanine

J. L. Yang, P. Sullivan, S. Schumann, I. Hancox, and T. S. Jones

Appl. Phys. Lett. 100, 023307 (2012); http://dx.doi.org/10.1063/1.3671181 (3 pages) | Cited 1 time

Online Publication Date: 12 January 2012

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We demonstrate organic discrete heterojunction photovoltaic cells based on fullerene (C60) and copper hexadecafluorophthalocyanine (F16CuPc), in which the C60 and F16CuPc act as the electron donor and the electron acceptor, respectively. The C60/F16CuPc cells fabricated with conventional and inverted architectures both exhibit comparable power conversion efficiencies. Furthermore, we show that the photocurrent in both cells is generated by a conventional exciton dissociation mechanism rather than the exciton recombination mechanism recently proposed for a similar C60/F16ZnPc system [Song et al., J. Am. Chem. Soc. 132, 4554 (2010)]. These results demonstrate that new unconventional material systems are a potential way to fabricate organic photovoltaic cells with inverted as well as conventional architectures.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena
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Charge transport in dual-gate organic field-effect transistors

J. J. Brondijk, M. Spijkman, F. Torricelli, P. W. M. Blom, and D. M. de Leeuw

Appl. Phys. Lett. 100, 023308 (2012); http://dx.doi.org/10.1063/1.3677676 (4 pages) | Cited 4 times

Online Publication Date: 13 January 2012

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The charge carrier distribution in dual-gate field-effect transistors is investigated as a function of semiconductor thickness. A good agreement with 2-dimensional numerically calculated transfer curves is obtained. For semiconductor thicknesses larger than the accumulation width, two spatially separated channels are formed. The cross-over from accumulation into depletion of the two channels in combination with a carrier density dependent mobility causes a shoulder in the transfer characteristics. A semiconducting monolayer has only a single channel. The charge carrier density, and consequently the mobility, are virtually constant and change monotonically with applied gate biases, leading to transfer curves without a shoulder.
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85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
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