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9 Jan 2012

Volume 100, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 023701 (2012); http://dx.doi.org/10.1063/1.3673335 (3 pages)

Biswarup Pathak, Henrik Löfås, Jariyanee Prasongkit, Anton Grigoriev, Rajeev Ahuja, and Ralph H. Scheicher
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Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition

Rafik Addou, Arjun Dahal, Peter Sutter, and Matthias Batzill

Appl. Phys. Lett. 100, 021601 (2012); http://dx.doi.org/10.1063/1.3675481 (3 pages) | Cited 12 times

Online Publication Date: 9 January 2012

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In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 °C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at ∼550 °C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below ∼500 °C a competing surface carbide phase impedes graphene formation.
Show PACS
81.05.ue Graphene
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Fx Diffusion; interface formation
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