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Appl. Phys. Lett. 100, 031111 (2012); http://dx.doi.org/10.1063/1.3678031 (4 pages)

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes

M. Munsch1, J. Claudon1, N. S. Malik1, K. Gilbert2, P. Grosse2, J.-M. Gérard1, F. Albert3, F. Langer3, T. Schlereth3, M. M. Pieczarka3, S. Höfling3, M. Kamp3, A. Forchel3, and S. Reitzenstein3,4

1CEA-CNRS-UJF group “Nanophysique et Semiconducteurs,” CEA, INAC, SP2M, F-38054 Grenoble, France
2CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France
3Technische Physik, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
4Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany

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(Received 9 November 2011; accepted 28 December 2011; published online 20 January 2012)

We demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators (microcylinder and microring) embedding a quantum dot (QD) active layer. Using InGaAlAs QDs, high-Q (>60 000) lasing modes are observed around 910 nm, up to 50 °C. Lasing with similar performance is obtained around 1230 nm, using InAs QDs. Furthermore, we show that the current injection in the active part of the device is improved in ring resonators, leading to threshold currents of approximately 4 mA for a device with 80 μm diameter. This geometry also suppresses WGMs with a high radial order, thus simplifying the lasing spectra. In these conditions, stable single-mode and two-color lasing can be obtained.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

International Patent Classification (IPC)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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