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Applied Physics Letters / Volume 100 / Issue 3 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 031112 (2012); http://dx.doi.org/10.1063/1.3678341 (3 pages)

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Yen-Kuang Kuo, Tsun-Hsin Wang, and Jih-Yuan Chang

Department of Physics, National Changhua University of Education, Changhua 500, Taiwan

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(Received 12 December 2011; accepted 3 January 2012; published online 20 January 2012)

Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN-InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

band structure, carrier density, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well devices, semiconductor quantum wells, wide band gap semiconductors

PACS

International Patent Classification (IPC)

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3678341

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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