APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 3 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 033110 (2012); http://dx.doi.org/10.1063/1.3678024 (3 pages)

Graphene-protein bioelectronic devices with wavelength-dependent photoresponse

Ye Lu1, Mitchell B. Lerner1, Zhengqing John Qi1, Joseph J. Mitala, Jr.2, Jong Hsien Lim1,3, Bohdana M. Discher2, and A. T. Charlie Johnson1

1Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
2Department of Biochemistry and Biophysics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
3Department of Physics, Swarthmore College, Swarthmore, Pennsylvania 19081, USA

View MapView Map

(Received 17 October 2011; accepted 27 December 2011; published online 18 January 2012)

We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The method serves to link polyhistidine-tagged proteins to graphene FETs using the tag itself. Atomic force microscopy and Raman spectroscopy provide structural understanding of the bio/nano hybrid; current-gate voltage measurements are used to elucidate the electronic properties. As an example application, we functionalize graphene FETs with fluorescent proteins to yield hybrids that respond to light at wavelengths defined by the optical absorption spectrum of the protein.

© 2012 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS, PACS, and IPC

Keywords

atomic force microscopy, biomolecular electronics, field effect transistors, fluorescence, graphene, molecular biophysics, nanobiotechnology, proteins, Raman spectra, visible spectra

PACS

International Patent Classification (IPC)

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3678024

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. Lu, B. R. Goldsmith, N. J. Kybert, and A. T. C. Johnson, Appl. Phys. Lett. 97, 083107 (2010)APPLAB000097000008083107000001.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Graphene-protein bioelectronic devices with wavelength-dependent photoresponse
  2. Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
  3. Organic photovoltaic cells based on unconventional electron donor fullerene and electron acceptor copper hexadecafluorophthalocyanine
  4. Laser direct growth of graphene on silicon substrate
  5. Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes
Go to AIP Home
Copyright © American Institute of Physics
close