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Applied Physics Letters / Volume 100 / Issue 3 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 033117 (2012); http://dx.doi.org/10.1063/1.3678185 (4 pages)

Gallium-droplet behaviors of self-catalyzed GaAs nanowires: A transmission electron microscopy study

Young Heon Kim, Dong Woo Park, and Sang Jun Lee

Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea

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(Received 10 September 2011; accepted 29 December 2011; published online 20 January 2012)

When the arsenic (As) precursor was supplied during cool down, the gallium (Ga) droplets on top of GaAs nanowires (NWs) were extinct on the final products. The Ga droplets were conserved, and their behaviors depended on the size of the NWs when the As supply was cut off during the cooling: The contact angles of the droplets on the NWs with diameters larger than 60 nm were fixed to approximately 113°. However, they were decreased and fluctuated on the NWs less than 60 nm in diameter. Finally, the NWs less than 46 nm were free from the Ga droplet.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

catalysis, contact angle, cooling, drops, gallium arsenide, III-V semiconductors, nanowires, transmission electron microscopy

PACS

  • 61.46.Km

    Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

  • 47.55.D-

    Drops and bubbles

  • 68.03.Cd

    Surface tension and related phenomena

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

International Patent Classification (IPC)

  • B01J

    Chemical or physical processes, e.g. catalysis, colloid chemistry; Their relevant apparatus

  • B82B1/00

    Nano-structures

  • F25

    Refrigeration or cooling; Combined heating and refrigeration systems; Heat pump systems; Manufacture or storage of ice; Liquefaction or solidification of gases

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3678185

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. H. Kim, H. J. Park, K. Kim, C. S. Kim, W. S. Yun, J. W. Lee, and M. D. Kim, Appl. Phys. Lett. 95, 033112 (2009)APPLAB000095000003033112000001.

    G. E. Cirlin, V. G. Dubrovskii, Y. B. Samsonenko, A. D. Bouravleuv, K. Durose, Y. Y. Proskuryakov, B. Mendes, L. Bowen, M. A. Kaliteevski, R. A. Abram, and D. Zeze, Phys. Rev. B 82, 035302 (2010).


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