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Applied Physics Letters / Volume 100 / Issue 3 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 033501 (2012); http://dx.doi.org/10.1063/1.3678023 (3 pages)

Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

Ju-Wan Lee and Jong-Ho Lee

School of Electrical Engineering and Computer Science and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Korea

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(Received 8 November 2011; accepted 26 December 2011; published online 18 January 2012)

Model of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current was proposed and explained together with that of gate edge tunneling (ET) current. A trap inside the gate dielectric between the drain and the gate of a metal-oxide-semiconductor field-effect transistor can affect theoretically both GIDL and gate ET currents at the same time. However, the RTNs for both currents were mostly uncorrelated and its cause was clarified. The RTN in GIDL current has a strong relation with a localized defect region in the drain overlapped by the gate. In the RTN of GIDL current, the shallower trap depth can show the larger amplitude of a RTN but sometimes show unexpectedly small amplitude if a trap is misaligned with the defect region.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

high-k dielectric thin films, leakage currents, MOSFET, random noise, semiconductor device models, semiconductor device noise, tunnelling

PACS

  • 85.30.Tv

    Field effect devices

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

International Patent Classification (IPC)

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3678023

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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