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16 Jan 2012

Volume 100, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages)

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros
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Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

Julien Vidal, Stephan Lany, Mayeul d’Avezac, Alex Zunger, Andriy Zakutayev, Jason Francis, and Janet Tate

Appl. Phys. Lett. 100, 032104 (2012); http://dx.doi.org/10.1063/1.3675880 (4 pages) | Cited 11 times

Online Publication Date: 17 January 2012

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SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.
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71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Pz Photoconduction and photovoltaic effects
61.72.J- Point defects and defect clusters
61.72.jd Vacancies

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Hongtao He, Baikui Li, Hongchao Liu, Xin Guo, Ziyan Wang, Maohai Xie, and Jiannong Wang

Appl. Phys. Lett. 100, 032105 (2012); http://dx.doi.org/10.1063/1.3677669 (3 pages) | Cited 14 times

Online Publication Date: 17 January 2012

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Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films.
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73.61.Ng Insulators
72.20.My Galvanomagnetic and other magnetotransport effects
73.20.At Surface states, band structure, electron density of states

Inelastic carrier lifetime in bilayer graphene

Cheol-Hwan Park, Feliciano Giustino, Catalin D. Spataru, Marvin L. Cohen, and Steven G. Louie

Appl. Phys. Lett. 100, 032106 (2012); http://dx.doi.org/10.1063/1.3675877 (3 pages)

Online Publication Date: 19 January 2012

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We present a first-principles calculation of the inelastic carrier lifetimes in pristine and doped bilayer graphene. The scattering rate arising from electron-electron interactions is smaller than that in graphene by 20–40% on average, and is highly anisotropic. On the other hand, the scattering rate arising from electron-phonon interactions is similar in magnitude to that in graphene and is isotropic.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.15.-m Methods of electronic structure calculations
71.38.-k Polarons and electron-phonon interactions

A tunable, dual mode field-effect or single electron transistor

B. Roche, B. Voisin, X. Jehl, R. Wacquez, M. Sanquer, M. Vinet, V. Deshpande, and B. Previtali

Appl. Phys. Lett. 100, 032107 (2012); http://dx.doi.org/10.1063/1.3678042 (3 pages) | Cited 4 times

Online Publication Date: 20 January 2012

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A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
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85.35.Gv Single electron devices
85.30.Tv Field effect devices

Growth orientation dependent photoluminescence of GaAsN alloys

Xiuxun Han, Tomohiro Tanaka, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi, and Shinichiro Sato

Appl. Phys. Lett. 100, 032108 (2012); http://dx.doi.org/10.1063/1.3679079 (4 pages)

Online Publication Date: 20 January 2012

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We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.
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78.55.Cr III-V semiconductors
61.72.jd Vacancies
68.55.ag Semiconductors
61.80.Fe Electron and positron radiation effects
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Temperature-induced martensite in magnetic shape memory Fe2MnGa observed by photoemission electron microscopy

C. A. Jenkins, A. Scholl, R. Kainuma, H. J. Elmers, and T. Omori

Appl. Phys. Lett. 100, 032401 (2012); http://dx.doi.org/10.1063/1.3677939 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2012

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The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe2MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni2MnGa, although the pinning in the recent work is an epitaxial interface and in this work the effective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.
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75.60.Ch Domain walls and domain structure
81.30.Kf Martensitic transformations
81.40.Lm Deformation, plasticity, and creep
62.20.fg Shape-memory effect; yield stress; superelasticity
64.70.K- Solid-solid transitions
75.50.Bb Fe and its alloys

Frequency-selective control of ferromagnetic resonance linewidth in magnetic multilayers

S. Schäfer, N. Pachauri, C. K. A. Mewes, T. Mewes, C. Kaiser, Q. Leng, and M. Pakala

Appl. Phys. Lett. 100, 032402 (2012); http://dx.doi.org/10.1063/1.3678025 (3 pages) | Cited 1 time

Online Publication Date: 18 January 2012

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We report on a frequency-specific linewidth broadening of the ferromagnetic resonance (FMR) mode of a NiFe free layer within a magnetic multilayer stack. The FMR studies reveal a significant broadening of the FMR linewidth of the free layer at frequencies where this resonance is degenerate with FMR modes stemming from other layers within the multilayer stack. By pinning part of the magnetic multilayer to an antiferromagnet, we tailor a ferromagnetic linewidth behavior that is anisotropic for a specific frequency.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Bb Fe and its alloys
75.50.Ee Antiferromagnetics

Half-metallicity, magnetic moments, and gap states in oxygen-deficient magnetite for spintronic applications

R. Arras, L. Calmels, and B. Warot-Fonrose

Appl. Phys. Lett. 100, 032403 (2012); http://dx.doi.org/10.1063/1.3678028 (3 pages) | Cited 3 times

Online Publication Date: 18 January 2012

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The electronic structure near oxygen vacancies in half-metallic magnetite has been calculated using first principles methods. Oxygen vacancies are responsible for the existence of gap states occupied by majority and minority spin electrons. We discuss whether these defects modify the spin magnetic moments, the magnetization, the magnetic coupling between Fe ions, and the half-metallic behaviour of magnetite. These results, which contribute to remove stumbling blocks to magnetite-based spintronic devices, could be useful to analyze the conductivity, the magnetotransport and magnetic properties, the electron and optical spectra of actual magnetite electrodes.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.jd Vacancies
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Sk Insulators

Room temperature ferromagnetism in transparent Fe-doped In2O3 films

H. Kim, M. Osofsky, M. M. Miller, S. B. Qadri, R. C. Y. Auyeung, and A. Piqué

Appl. Phys. Lett. 100, 032404 (2012); http://dx.doi.org/10.1063/1.3678038 (3 pages) | Cited 9 times

Online Publication Date: 18 January 2012

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Fe-doped In2O3 thin films were deposited on MgO substrates by pulsed laser deposition (PLD). The linear decrease in lattice constant with increasing Fe concentration of up to 18% suggests the incorporation of Fe atoms into In2O3 lattice matrix. The PLD grown films exhibited ferromagnetism at room temperature with a strong magnetic anisotropy. The observed anomalous Hall effect (AHE) indicates that spin polarized charge carriers play an important role in the origin of ferromagnetism in these oxides. Our observations, including AHE, magnetic anisotropy, and structural analysis provide strong evidence of intrinsic ferromagnetism at room temperature in these materials.
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75.70.Ak Magnetic properties of monolayers and thin films
78.66.Li Other semiconductors
81.05.Hd Other semiconductors
73.61.Le Other inorganic semiconductors
75.30.Gw Magnetic anisotropy
75.50.Dd Nonmetallic ferromagnetic materials

High power and low critical current spin torque oscillation from a magnetic tunnel junction with a built-in hard axis polarizer

Yisong Zhang, Hui Zhao, Andrew Lyle, Paul A. Crowell, and Jian-Ping Wang

Appl. Phys. Lett. 100, 032405 (2012); http://dx.doi.org/10.1063/1.3679082 (4 pages) | Cited 2 times

Online Publication Date: 19 January 2012

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The microwave power and the critical current of spin torque oscillator (STO) devices with a built-in hard axis polarizer have been studied. This design allows for an external-field-free STO. The time domain oscillation signals give direct evidence of higher output from the hard axis polarizer STO, which agrees with spectroscopic results. The hard axis polarizer STO generates a higher power because of the larger slope of the magnetoresistance-angle curve at the lowest energy potential. Furthermore, the hard axis polarizer STO shows a low critical current indicating the large spin torque effect when two magnetic layers are in the 90° configuration.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
84.30.Ng Oscillators, pulse generators, and function generators
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Magnetodielectric effect in Z-type hexaferrite

X. Zhang, Y. G. Zhao, Y. F. Cui, L. D. Ye, J. W. Wang, S. Zhang, H. Y. Zhang, and M. H. Zhu

Appl. Phys. Lett. 100, 032901 (2012); http://dx.doi.org/10.1063/1.3677672 (3 pages) | Cited 1 time

Online Publication Date: 17 January 2012

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The authors report on the magnetodielectric (MD) effect of Z-type hexaferrite Sr3Co2Fe24O41 at various temperatures and frequencies. A fairly large negative MD effect was observed with a peak near room temperature and a maximum at low frequencies. Analysis suggests that the MD effect shows a quadratic dependence on magnetization. The results were discussed by considering the magnetic field induced change of transverse conical spin structure and spin-phonon coupling. This work is helpful for understanding the MD effect in materials with complicated spin structures.
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75.85.+t Magnetoelectric effects, multiferroics
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Coherent in-plane tensile strain in perovskite Ba0.8Sr0.2TiO3 films on spinel MgAl2O4 substrates

Xiaolan Zhou, Ilan Stern, Punam Silwal, Ludi Miao, and Dae Ho Kim

Appl. Phys. Lett. 100, 032902 (2012); http://dx.doi.org/10.1063/1.3677938 (4 pages)

Online Publication Date: 18 January 2012

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A coherent in-plain tensile strain was achieved in epitaxial films of perovskite Ba0.8Sr0.2TiO3 grown on spinel MgAl2O4 (001) substrates by inserting Ni0.6Al0.4O1 + δ buffer layers. The epitaxial buffer layer exhibits high crystalline quality with a tetragonal symmetry due to the pseudomorphic strain from the spinel substrate and allows coherent growth of the perovskite film. In contrast to the typical ferroelectric hysteresis loops measured along an in-plane direction from strain-relaxed Ba0.8Sr0.2TiO3 films grown directly on the spinel substrate, similar measurements from the buffered films show double hysteretic behavior, indicating the significant influence of isotropic tensile strain on the ferroelectricity.
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77.84.Cg PZT ceramics and other titanates
77.55.Px Epitaxial and superlattice films
68.60.Bs Mechanical and acoustical properties
77.80.Dj Domain structure; hysteresis

Frequency multiplying behavior in a magnetoelectric unimorph

Wenhui Zhang, Ge Yin, Jiangwei Cao, Jianmin Bai, and Fulin Wei

Appl. Phys. Lett. 100, 032903 (2012); http://dx.doi.org/10.1063/1.3678635 (3 pages) | Cited 4 times

Online Publication Date: 19 January 2012

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We observe frequency multiplying behavior in a magnetoelectric (ME) unimorph: such a frequency-multiplied signal is generated when the input frequency (fin) of an alternating current magnetic field (Hac) is around 1/n (n denotes integer) of the mechanical resonance frequency (fr) of the device. We observe both odd and even harmonic signals when a direct current magnetic field (Hdc) is applied, whereas only even harmonic signals arise for Hdc = 0. This behavior results from the combined effect of the nonlinear character of the Metglas magnetostriction and a mechanical resonance phenomenon in the magnetoelectric unimorph.
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85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
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Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles

Norio Okabayashi, Kosuke Maeda, Taro Muraki, Daisuke Tanaka, Masanori Sakamoto, Toshiharu Teranishi, and Yutaka Majima

Appl. Phys. Lett. 100, 033101 (2012); http://dx.doi.org/10.1063/1.3676191 (3 pages) | Cited 6 times

Online Publication Date: 17 January 2012

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Single-electron transistors have the potential to become next-generation nanodevices and sensors owing to their small size, low power consumption, and high charge sensitivity, where the charging energy of the devices is the most important parameter determining the operational temperature. Here, we have demonstrated that the charging energy of single-electron transistors can be controlled (48 ± 4 meV) by adopting electroless gold plating to make separation-defined nanogap electrodes and employing size-controlled chemically synthesized Au nanoparticles (5.2 ± 0.5 nm) as a Coulomb island. At this charging energy, the devices can be operated up to 160 K with on/off current ratio of 60%.
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85.35.Gv Single electron devices

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

Yu. I. Mazur, V. G. Dorogan, G. J. Salamo, G. G. Tarasov, B. L. Liang, C. J. Reyner, K. Nunna, and D. L. Huffaker

Appl. Phys. Lett. 100, 033102 (2012); http://dx.doi.org/10.1063/1.3676274 (4 pages) | Cited 5 times

Online Publication Date: 17 January 2012

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Antimony-incorporated InAsSb quantum dots (QDs) are grown by molecular beam epitaxy on GaAs(001) substrates. The QD density increases ∼7 times while the QD height decreases ∼50% due to the increase of QD nucleation sites after Sb incorporation into the GaAs buffer layer and into the InAs QDs. These Sb-incorporated InAsSb QDs show red-shift in the photoluminescence (PL) spectrum and large energy separation between confined energy levels. More interestingly, besides the typical type-I QD transition, an additional peak from the recombination at wetting layer interface develops as the excitation laser intensity increases. This peak clearly exhibits type-II characteristics from the measurement of a large blue-shift of the PL peak and a long PL decay time. Finally, the mechanism of the coexistence of type-I and type-II band alignments is discussed.
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71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Graphene thickness-graded transistors with reduced electronic noise

Guanxiong Liu, Sergey Rumyantsev, Michael Shur, and Alexander A. Balandin

Appl. Phys. Lett. 100, 033103 (2012); http://dx.doi.org/10.1063/1.3676277 (3 pages) | Cited 8 times

Online Publication Date: 17 January 2012

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The authors demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene.
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85.30.Tv Field effect devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.48.Gh Structure of graphene
68.65.Pq Graphene films
81.05.ue Graphene
07.50.Hp Electrical noise and shielding equipment

Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

K. M. Gambaryan, V. M. Aroutiounian, V. G. Harutyunyan, O. Marquardt, and P. G. Soukiassian

Appl. Phys. Lett. 100, 033104 (2012); http://dx.doi.org/10.1063/1.3676437 (4 pages) | Cited 3 times

Online Publication Date: 17 January 2012

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Quaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample.
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81.16.-c Methods of micro- and nanofabrication and processing
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mm Fracture
75.85.+t Magnetoelectric effects, multiferroics
61.46.-w Structure of nanoscale materials
68.65.Hb Quantum dots (patterned in quantum wells)

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O2−δ thin films

K. Mohan Kant, V. Esposito, and N. Pryds

Appl. Phys. Lett. 100, 033105 (2012); http://dx.doi.org/10.1063/1.3676659 (3 pages) | Cited 3 times

Online Publication Date: 17 January 2012

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Strained epitaxial Ce0.9Gd0.1O2−δ (CGO) thin films are deposited on MgO(001) substrates with SrTiO3 (STO) buffer layers. The strain in CGO epitaxial thin films is induced and controlled by varying the thickness of STO buffer layers. The induced strain is found to significantly enhance the in-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity.
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66.30.hd Ionic crystals
68.55.-a Thin film structure and morphology

Composition dependent nanocolumn tilting angle during the oblique angle co-deposition

Yiping Zhao, Yuping He, and Cameron Brown

Appl. Phys. Lett. 100, 033106 (2012); http://dx.doi.org/10.1063/1.3676665 (3 pages) | Cited 2 times

Online Publication Date: 17 January 2012

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During the oblique angle co-deposition of Si and Cu, the nanoculumn tilting angle β changes systematically with the relative composition of Si and Cu when the vapor incident angle θ is fixed. This result demonstrates that the β-θ relationship does depend closely on the material property and composition, which is very different from the predictions of the well-known “universal” models, such as tangent or cosine rules. A statistic model based on the size, spacing, and stacking of Si and Cu atoms has been proposed and the predicted result agrees well with the experimental data.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Aa Theory and models of film growth
81.16.-c Methods of micro- and nanofabrication and processing
68.55.-a Thin film structure and morphology

Near-field optical imaging with a nanotip grown on fibered polymer microlens

Zohreh Sedaghat, Anna Rumyantseva, Aurélien Bruyant, Sergei Kostcheev, Sylvain Blaize, Safi Jradi, Renaud Bachelot, and Antoine Monmayrant

Appl. Phys. Lett. 100, 033107 (2012); http://dx.doi.org/10.1063/1.3676669 (3 pages) | Cited 1 time

Online Publication Date: 17 January 2012

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Pointed carbon nanotips have been deposited on polymer microlensed optical fibers and used as highly resolving scattering nanoprobes. Optical characterizations supported by simulations demonstrate an efficient spatial filtering where the light scattered by the carbon tip is selectively coupled into the fiber core. As an application, a channel surface waveguide was characterized in collection mode. A special attention was given to the polarization response, and the s-polarized field is found to be slightly favored due to the detection direction. The proposed hybrid probe’s robustness, the symmetric detection and design flexibility it offers, makes it an attractive tool for nano-optics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Role of RuO3 for the formation of RuO2 nanorods

Denis Music, Johannes Breunung, Stanislav Mráz, and Jochen M. Schneider

Appl. Phys. Lett. 100, 033108 (2012); http://dx.doi.org/10.1063/1.3677665 (4 pages) | Cited 1 time

Online Publication Date: 17 January 2012

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We have observed Ru hyperoxides (RuO3 and RuO4) in Ru–O2–Ar plasmas using mass-energy analysis. Based on ab initio adsorption data, a nanorod formation model is presented. RuO3 exhibits the strongest adsorption on RuO2(001). Adatoms impinging on these RuO3 islands are likely to contribute towards three-dimensional growth due to Ehrlich-Schwoebel barriers. We propose that RuO3 islands act as nucleation sites for the nanorod formation. Our model is consistent with available experimental data.
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81.16.-c Methods of micro- and nanofabrication and processing
68.35.B- Structure of clean surfaces (and surface reconstruction)
52.77.-j Plasma applications
68.43.Mn Adsorption kinetics
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Multifunctional silicon inspired by a wing of male Papilio ulysse

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages) | Cited 2 times

Online Publication Date: 17 January 2012

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Effective entrapment of air and light is a key element for maintaining stable superhydrophobicity and enhancing anti-reflection or absorption. Inspired by a wing of male Papilio ulysse having a unique structure for enabling effective trapping of air and light, we demonstrate that the structure consisting of well-defined multilayer decorated by nanostructures can be obtained on a silicon wafer by a simple microelectromechanical process, consequently resulted in stable superhydrophobocity under static and dynamic conditions, and strong wideband optical absorption.
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81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
68.08.Bc Wetting
42.79.Wc Optical coatings
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Graphene-protein bioelectronic devices with wavelength-dependent photoresponse

Ye Lu, Mitchell B. Lerner, Zhengqing John Qi, Joseph J. Mitala, Jr., Jong Hsien Lim, Bohdana M. Discher, and A. T. Charlie Johnson

Appl. Phys. Lett. 100, 033110 (2012); http://dx.doi.org/10.1063/1.3678024 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2012

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We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The method serves to link polyhistidine-tagged proteins to graphene FETs using the tag itself. Atomic force microscopy and Raman spectroscopy provide structural understanding of the bio/nano hybrid; current-gate voltage measurements are used to elucidate the electronic properties. As an example application, we functionalize graphene FETs with fluorescent proteins to yield hybrids that respond to light at wavelengths defined by the optical absorption spectrum of the protein.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
36.20.Ng Vibrational and rotational structure, infrared and Raman spectra
87.15.mq Luminescence
87.14.E- Proteins

Chemical sensors based on randomly stacked graphene flakes

Amin Salehi-Khojin, David Estrada, Kevin Y. Lin, Ke Ran, Richard T. Haasch, Jian-Min Zuo, Eric Pop, and Richard I. Masel

Appl. Phys. Lett. 100, 033111 (2012); http://dx.doi.org/10.1063/1.3676276 (4 pages) | Cited 3 times

Online Publication Date: 18 January 2012

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We demonstrate a simple fabrication method to produce randomly stacked graphene chemiresistors using surfactant-assisted exfoliation of graphite. We analyze the sensitivity of such chemiresistors as a function of vacuum filtration volume and temperature. At low vacuum filtration volumes (<∼5 mL) the sensors exhibit superior sensitivity towards target molecules compared to previously developed polycrystalline graphene, polycrystalline graphene microribbon, and carbon nanotube chemical sensors. Temperature dependent measurements, transmission electron microscopy and scanning electron microscopy suggest the improved sensitivity in the randomly stacked graphene chemiresistors is due to 2-dimensional charge carrier hopping through edge defects.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Modulation and cancellation of the Casimir force by using radiation pressure

A. A. Banishev, C.-C. Chang, R. Zandi, and U. Mohideen

Appl. Phys. Lett. 100, 033112 (2012); http://dx.doi.org/10.1063/1.3678189 (3 pages)

Online Publication Date: 18 January 2012

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We demonstrate the cancellation and dynamic modulation of the Casimir force by using transparent electrodes and radiation pressure. The attractive Casimir force between the two surfaces is balanced by radiation pressure on the first surface from light transmitted through the second transparent surface. The cancellation and dynamic modulation of dispersion forces will find applications in the design and enhanced performance of micro- and nanoelectro mechanical systems.
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07.10.Cm Micromechanical devices and systems
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