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16 Jan 2012

Volume 100, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages)

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros
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Gate tunable non-linear currents in bilayer graphene diodes

Hiroki Shioya, Michihisa Yamamoto, Saverio Russo, Monica F. Craciun, and Seigo Tarucha

Appl. Phys. Lett. 100, 033113 (2012); http://dx.doi.org/10.1063/1.3676441 (4 pages) | Cited 4 times

Online Publication Date: 18 January 2012

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Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top-gated electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show that the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 to 130 meV.
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73.61.Wp Fullerenes and related materials
72.80.Vp Electronic transport in graphene
73.40.Ei Rectification

Nanosized precipitates in half-Heusler TiNiSn alloy

Yaw Wang Chai and Yoshisato Kimura

Appl. Phys. Lett. 100, 033114 (2012); http://dx.doi.org/10.1063/1.3679377 (3 pages) | Cited 5 times

Online Publication Date: 19 January 2012

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The microstructure of half-Heusler TiNiSn alloy has been investigated in this study. A high density of coherent nanosized Heusler precipitates was found within the half-Heusler matrix. Formation of these Heusler precipitates occurs by a phase separation process, where a single phase solid solution (half-Heusler-Heusler) decomposes into an equilibrium two-phase mixture of half-Heusler and Heusler regions. These Heusler nanoprecipitates improve the thermoelectric properties of the alloy.
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81.30.Mh Solid-phase precipitation
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.15.Jf Thermoelectric and thermomagnetic effects
72.20.Pa Thermoelectric and thermomagnetic effects
75.50.Cc Other ferromagnetic metals and alloys
75.50.Pp Magnetic semiconductors

Probing transconductance spatial variations in graphene nanoribbon field-effect transistors using scanning gate microscopy

A. Soudi, G. Aivazian, S.-F. Shi, X. D. Xu, and Y. Gu

Appl. Phys. Lett. 100, 033115 (2012); http://dx.doi.org/10.1063/1.3678034 (4 pages) | Cited 2 times

Online Publication Date: 19 January 2012

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We have used scanning gate microscopy to probe local transconductance in graphene nanoribbon (GNR) field-effect transistors (FETs) fabricated from chemical vapor deposition-grown graphene. Particularly, nanometer-scale (≤100 nm, resolution limited) areas characterized by significant transconductance spatial variations were observed along the FET channel. These were attributed to the impurities at or close to the edges of the GNRs. Our results further show that a single such impurity site in a long-channel (∼2 μm) GNR FET can essentially control the global device characteristics. This finding demonstrates the importance of controlling the spatial inhomogeneity of electronic properties in graphene and related nanostructures in order to realize their envisioned applications in new electronics.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices

Mode tuning of photonic crystal nanocavities by photoinduced non-thermal oxidation

Francesca Intonti, Niccolò Caselli, Silvia Vignolini, Francesco Riboli, Santosh Kumar, Armando Rastelli, Oliver G. Schmidt, Marco Francardi, Annamaria Gerardino, Laurent Balet, Lianhe H. Li, Andrea Fiore, and Massimo Gurioli

Appl. Phys. Lett. 100, 033116 (2012); http://dx.doi.org/10.1063/1.3678036 (4 pages) | Cited 4 times

Online Publication Date: 20 January 2012

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A method to achieve photoinduced tuning of PhC nanocavity modes is discussed and implemented. It is based on light induced oxidation in air atmosphere with very low thermal budget which produces a local reduction of the GaAs membrane effective thickness and a large blueshift of the nanocavity modes. It is also shown that green light is much more efficient in inducing the micro-oxidation with respect to near infrared light. The observed behaviour is attributed to oxide growth promoted by photoenhanced reactivity.
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42.70.Qs Photonic bandgap materials
42.79.-e Optical elements, devices, and systems
81.65.Mq Oxidation

Gallium-droplet behaviors of self-catalyzed GaAs nanowires: A transmission electron microscopy study

Young Heon Kim, Dong Woo Park, and Sang Jun Lee

Appl. Phys. Lett. 100, 033117 (2012); http://dx.doi.org/10.1063/1.3678185 (4 pages) | Cited 3 times

Online Publication Date: 20 January 2012

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When the arsenic (As) precursor was supplied during cool down, the gallium (Ga) droplets on top of GaAs nanowires (NWs) were extinct on the final products. The Ga droplets were conserved, and their behaviors depended on the size of the NWs when the As supply was cut off during the cooling: The contact angles of the droplets on the NWs with diameters larger than 60 nm were fixed to approximately 113°. However, they were decreased and fluctuated on the NWs less than 60 nm in diameter. Finally, the NWs less than 46 nm were free from the Ga droplet.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
47.55.D- Drops and bubbles
68.03.Cd Surface tension and related phenomena
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Enhancing interwall load transfer by vacancy defects in carbon nanotubes

David Santo Pietro, Chun Tang, and Changfeng Chen

Appl. Phys. Lett. 100, 033118 (2012); http://dx.doi.org/10.1063/1.3678342 (4 pages) | Cited 3 times

Online Publication Date: 20 January 2012

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Structural defects usually reduce the load carrying capacity of materials. Here, we show by molecular dynamics simulations an anomalous vacancy-defect-induced enhancement of interwall load transfer in annealed carbon nanotubes (CNTs). The large increase of load transfer mainly stems from the hybrid sp2-sp3 interwall bonds at the vacancy edges, which are stronger than the sp3 interwall bonds in pristine CNTs. This finding offers insights for better understanding and designing CNT-based high-performance nanocomposites.
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61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
61.72.jd Vacancies
61.46.Fg Nanotubes
81.07.De Nanotubes
81.40.Gh Other heat and thermomechanical treatments

Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

Ting-Wei Yeh, Yen-Ting Lin, Byungmin Ahn, Lawrence S. Stewart, P. Daniel Dapkus, and Steven R. Nutt

Appl. Phys. Lett. 100, 033119 (2012); http://dx.doi.org/10.1063/1.3671182 (3 pages) | Cited 6 times

Online Publication Date: 20 January 2012

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We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.
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85.60.Jb Light-emitting devices
68.65.Fg Quantum wells
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The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors

Jinhua Li, Jun Du, Jianbin Xu, Helen L. W. Chan, and Feng Yan

Appl. Phys. Lett. 100, 033301 (2012); http://dx.doi.org/10.1063/1.3678196 (4 pages) | Cited 7 times

Online Publication Date: 18 January 2012

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Organic thin-film transistors based on a high mobility n-type semiconductor poly{[n,n9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)} P(NDI2OD-T2) and different polymer gate dielectrics are fabricated. The average electron mobility decreases from 0.76 to 0.08 cm2/Vs with the increase of the gate dielectric constant from 2.6 to 7.8. The P(NDI2OD-T2) film shows unconventional face-on molecular packing, which results in short distances and pronounced interactions between electrons and gate dielectric. Therefore, the decrease of the electron mobility with the increasing dielectric constant is attributed to the Fröhlich polaron effect for the interaction between electrons in the channel and ionic polarization cloud in the gate dielectric.
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85.30.Tv Field effect devices
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Morphological control of hybrid polymer-quantum dot solar cells with electron acceptor ligands

Mathieu Boivin, Sébastien Lamarre, Jonathan Tessier, Marie-Ève Lecavalier, Ahmed Najari, Sophie Dufour-Beauséjour, Evelyne Brown Dussault, Pierre Collin, and Claudine Nì. Allen

Appl. Phys. Lett. 100, 033302 (2012); http://dx.doi.org/10.1063/1.3678603 (3 pages) | Cited 1 time

Online Publication Date: 20 January 2012

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We integrate the electro-attractive conjugated molecule tetrafluoro-tetracyano-quinodimethane (F4TCNQ) in the active layer of polymer-CdSe colloidal quantum dot (cQD) solar cells. The addition of this molecule enhances cQD dispersion inside the polymer. In tuning its concentration, we can optimize the active layer morphology for charge separation and transport. A smoother morphology is likely the result of polymer chain adsorption on cQDs via F4TCNQ which increases the steric barrier between cQDs. Our most optimized device has a F4TCNQ:cQDs weight ratio of 0.5% improving the power conversion efficiency by a factor ∼2.3.
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88.40.H- Solar cells (photovoltaics)
88.40.J- Types of solar cells
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Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

Ju-Wan Lee and Jong-Ho Lee

Appl. Phys. Lett. 100, 033501 (2012); http://dx.doi.org/10.1063/1.3678023 (3 pages)

Online Publication Date: 18 January 2012

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Model of random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current was proposed and explained together with that of gate edge tunneling (ET) current. A trap inside the gate dielectric between the drain and the gate of a metal-oxide-semiconductor field-effect transistor can affect theoretically both GIDL and gate ET currents at the same time. However, the RTNs for both currents were mostly uncorrelated and its cause was clarified. The RTN in GIDL current has a strong relation with a localized defect region in the drain overlapped by the gate. In the RTN of GIDL current, the shallower trap depth can show the larger amplitude of a RTN but sometimes show unexpectedly small amplitude if a trap is misaligned with the defect region.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Double-waveguide quantum cascade laser

Romain Blanchard, Cécile Grezes, Stefan Menzel, Christian Pflügl, Laurent Diehl, Yong Huang, Jae-Hyun Ryou, Russell D. Dupuis, and Federico Capasso

Appl. Phys. Lett. 100, 033502 (2012); http://dx.doi.org/10.1063/1.3678033 (4 pages)

Online Publication Date: 18 January 2012

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We demonstrate 1.1 W peak power at room-temperature from a double-waveguide quantum cascade laser (QCL) grown by metal-organic chemical vapor deposition. Two full broadband QCL active regions were grown on top of each other separated by thick cladding layers to reduce gain competition. Simultaneous lasing on Fabry-Perot modes separated by as much as 360 cm−1 is obtained. This design paves the way for high-brightness broadband mid-infrared sources, as well as more complex three-terminal devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Surface acoustic wave solid-state rotational micromotor

Richie J. Shilton, Sean M. Langelier, James R. Friend, and Leslie Y. Yeo

Appl. Phys. Lett. 100, 033503 (2012); http://dx.doi.org/10.1063/1.3676660 (3 pages)

Online Publication Date: 18 January 2012

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Surface acoustic waves (SAWs) are used to drive a 1 mm diameter rotor at speeds exceeding 9000 rpm and torque of nearly 5 nNm. Unlike recent high-speed SAW rotary motors, however, the present design does not require a fluid coupling layer but interestingly exploits adhesive stiction as an internal preload, a force usually undesirable at these scales; with additional preloads, smaller rotors can be propelled to 15 000 rpm. This solid-state motor has no moving parts except for the rotor and is sufficiently simple to allow integration into miniaturized drive systems for potential use in microfluidic diagnostics, optical switching and microrobotics.
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43.38.-p Transduction; acoustical devices for the generation and reproduction of sound
43.58.-e Acoustical measurements and instrumentation

Low noise MgB2 terahertz hot-electron bolometer mixers

S. Bevilacqua, S. Cherednichenko, V. Drakinskiy, J. Stake, H. Shibata, and Y. Tokura

Appl. Phys. Lett. 100, 033504 (2012); http://dx.doi.org/10.1063/1.3678027 (3 pages) | Cited 2 times

Online Publication Date: 19 January 2012

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We report on low noise terahertz bolometric mixers made of MgB2 superconducting thin films. For a 10-nm-thick MgB2 film, the lowest mixer noise temperature was 600 K at 600 GHz. For 30 to 10-nm-thick films, the mixer gain bandwidth is an inverse function of the film thickness, reaching 3.4 GHz for the 10-nm film. As the critical temperature of the film decreases, the gain bandwidth also decreases, indicating the importance of high quality thin films for large gain bandwidth mixers. The results indicate the prospect of achieving a mixer gain bandwidth as large as 10-8 GHz for 3 to 5-nm-thick MgB2 films.
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84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Matteo Meneghini, Antonio Stocco, Marco Bertin, Denis Marcon, Alessandro Chini, Gaudenzio Meneghesso, and Enrico Zanoni

Appl. Phys. Lett. 100, 033505 (2012); http://dx.doi.org/10.1063/1.3678041 (3 pages) | Cited 6 times

Online Publication Date: 20 January 2012

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This paper describes a detailed analysis of the time-dependent degradation kinetics of GaN-based high electron mobility transistors submitted to reverse-bias stress. We show that: (1) exposure to reverse-bias may induce recoverable changes in gate leakage and threshold voltage, due to the accumulation of negative charge within the AlGaN layer, and of positive charge at the AlGaN/GaN interface. (2) Permanent degradation consists in the generation of parasitic leakage paths. Several findings support the hypothesis that permanent degradation is due to a defect percolation process: (2(a)) for sufficiently long stress times, degradation occurs even below the “critical voltage” estimated by step stress experiments; (2(b)) before permanent degradation, gate current becomes noisy, indicating an increase in defect concentration; and (2(c)) time to breakdown strongly depends on the initial defectiveness of the samples.
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85.30.Tv Field effect devices

Hybrid inertial method for broadband scattering reduction

Theodore P. Martin and Gregory J. Orris

Appl. Phys. Lett. 100, 033506 (2012); http://dx.doi.org/10.1063/1.3678633 (3 pages) | Cited 3 times

Online Publication Date: 20 January 2012

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We combine a transformational acoustic (TA) conformal map with a scattering cancellation (SC) layer to produce a hybrid design that reduces the scattering cross-section of an object in an aqueous environment. Our method is an inertial design that does not rely on negative-valued media. Using multiple scattering theory for cylindrical shells, our calculations demonstrate that the hybrid design outperforms both a discretized transformational acoustic superlattice and a scattering cancellation layer over a broad frequency bandwidth. The hybrid method can be utilized to optimize performance over targeted frequency bands.
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43.40.-r Structural acoustics and vibration
43.20.Fn Scattering of acoustic waves
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Microwave-induced thermoacoustic computed tomography with a clinical contrast agent of NMG2[Gd(DTPA)]

Huan Qin, Sihua Yang, and Da Xing

Appl. Phys. Lett. 100, 033701 (2012); http://dx.doi.org/10.1063/1.3678022 (3 pages)

Online Publication Date: 18 January 2012

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NMG2[Gd(DTPA)], a clinical contrast agent, was investigated for microwave-induced thermoacoustic computed tomography (CT). Due to ionic conduction and magnetic dipole rotation in the presence of microwave field, microwave energy absorbed by NMG2[Gd(DTPA)] would be transformed to thermoacoustic signals based on the thermoelastic effect. The experimental results demonstrated that NMG2[Gd(DTPA)] at a concentration of 10 mM provided effective enhancement compared with water. The enhancement of NMG2[Gd(DTPA)] for thermoacoustic CT was further demonstrated in invivo tumor-bearing mouse. The theory and experimental results indicate that the clinically available NMG2[Gd(DTPA)] will promote the medical applications of thermoacoustic CT.
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87.57.Q- Computed tomography
87.63.D- Ultrasonography
87.19.Pp Biothermics and thermal processes in biology
87.19.xj Cancer
87.57.cj Contrast

Centering of organic-inorganic hybrid liposomal cerasomes in electrospun gelatin nanofibers

Zhengbao Zha, Siu Ling Leung, Zhifei Dai, and Xiaoyi Wu

Appl. Phys. Lett. 100, 033702 (2012); http://dx.doi.org/10.1063/1.3678040 (3 pages) | Cited 1 time

Online Publication Date: 18 January 2012

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A study investigating the embedding of stabilized organic-inorganic liposomal cerasomes in gelatin nanofibers through the electrospinning of cerasome-dispersed gelatin aqueous solution is presented. Fluorescent and transmission electron microscopy confirm the embedding and centering of cerasomes in the electrospun nanofibers. A simple mechanism is proposed for the centering of cerasomes in gelatin nanofibers. The ability to incorporate cerasomes capable of encapsulating a variety of bioactive molecules provides a promising method to functionalize polymer nanofibers.
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87.80.-y Biophysical techniques (research methods)
87.16.D- Membranes, bilayers, and vesicles
81.07.Pr Organic-inorganic hybrid nanostructures
82.70.Gg Gels and sols
87.14.Cc Lipids
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Investigation of atypical molten pool dynamics in tungsten carbide-cobalt during laser deposition using in-situ thermal imaging

Yuhong Xiong, William H. Hofmeister, John E. Smugeresky, Jean-Pierre Delplanque, and Julie M. Schoenung

Appl. Phys. Lett. 100, 034101 (2012); http://dx.doi.org/10.1063/1.3676420 (4 pages) | Cited 1 time

Online Publication Date: 18 January 2012

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An atypical “swirling” phenomenon observed during the laser deposition of tungsten carbide-cobalt cermets by laser engineered net shaping (LENS®) was studied using in-situ high-speed thermal imaging. To provide fundamental insight into this phenomenon, the thermal behavior of pure cobalt during LENS was also investigated for comparison. Several factors were considered as the possible source of the observed differences. Of those, phase difference, material emissivity, momentum transfer, and free surface disruption from the powder jets, and, to a lesser extent, Marangoni convection were identified as the relevant mechanisms.
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66.25.+g Thermal conduction in nonmetallic liquids
81.05.Mh Cermets, ceramic and refractory composites

Modeling the quantum efficiency of controlled porosity dispenser photocathodes

Z. Pan, K. Jensen, and P. O’Shea

Appl. Phys. Lett. 100, 034102 (2012); http://dx.doi.org/10.1063/1.3678035 (3 pages)

Online Publication Date: 20 January 2012

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A theoretical model of diffusion, evaporation, and rejuvenation of cesium on the surface of a controlled porosity dispenser photocathode is developed. The model applies a novel hexagonal meshgrid for increased numerical accuracy. For activation temperatures within the range of 400 K–1000 K, simulation found differences of less than 5% between the quantum efficiency (QE) maximum and minimum over ideal homogenous surfaces. Simulations suggest more variation for real cases to include real surface non uniformity. Changes in the QE map across the surface suggest that the emittance can change depending on temperature. Extensions to the model as well as connections to experiment are discussed.
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85.60.Ha Photomultipliers; phototubes and photocathodes
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Erratum: “Reduction of magnetostatic interactions in self-organized arrays of nickel nanowires using atomic layer deposition” [Appl. Phys. Lett. 98, 112501 (2011)]

S. Da Col, M. Darques, O. Fruchart, and L. Cagnon

Appl. Phys. Lett. 100, 039901 (2012); http://dx.doi.org/10.1063/1.3678018 (1 page)

Online Publication Date: 18 January 2012

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Abstract Unavailable
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99.10.Cd Errata
81.07.Gf Nanowires
75.75.Cd Fabrication of magnetic nanostructures
75.50.Tt Fine-particle systems; nanocrystalline materials
FREE

Publisher’s Note: “Quantitative analysis of the guest-concentration dependence of the mobility in a disordered fluorene-arylamine host-guest system in the guest-to-guest regime” [Appl. Phys. Lett. 99, 203303 (2011)]

H. T. Nicolai, A. J. Hof, M. Lu, P. W. M. Blom, R. J. de Vries, and R. Coehoorn

Appl. Phys. Lett. 100, 039902 (2012); http://dx.doi.org/10.1063/1.3679550 (1 page)

Online Publication Date: 19 January 2012

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Abstract Unavailable
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99.10.Fg Publisher's note
82.80.-d Chemical analysis and related physical methods of analysis
FREE

Publisher’s Note: “Mechanical stability of ordered droplet packings in microfluidic channels” [Appl. Phys. Lett. 99, 244104 (2011)]

Jean-Baptiste Fleury, Ohle Claussen, Stephan Herminghaus, Martin Brinkmann, and Ralf Seemann

Appl. Phys. Lett. 100, 039903 (2012); http://dx.doi.org/10.1063/1.3679559 (1 page)

Online Publication Date: 19 January 2012

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Abstract Unavailable
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99.10.Fg Publisher's note
47.60.Dx Flows in ducts and channels
47.61.Jd Multiphase flows
FREE

Publisher’s Note: “Tunable and absolute electromagnetic vacuum in two-dimensional photonic-band-gap Based on multiferroic materials” [Appl. Phys. Lett. 99, 132903 (2011)]

Kai Chen, Wei Jia, Yanbin Chen, Minghui Lu, Xirui Zhang, Wei Yang, Yong Wu, Chenxi Huang, Xiangyin Li, Jie Su, Junming Liu, Xiaomei Lu, Jinsong Zhu, and Yun Liu

Appl. Phys. Lett. 100, 039904 (2012); http://dx.doi.org/10.1063/1.3679424 (1 page)

Online Publication Date: 19 January 2012

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Abstract Unavailable
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99.10.Fg Publisher's note
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
75.85.+t Magnetoelectric effects, multiferroics
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