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16 Jan 2012

Volume 100, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages)

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros
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Temperature-induced martensite in magnetic shape memory Fe2MnGa observed by photoemission electron microscopy

C. A. Jenkins, A. Scholl, R. Kainuma, H. J. Elmers, and T. Omori

Appl. Phys. Lett. 100, 032401 (2012); http://dx.doi.org/10.1063/1.3677939 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2012

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The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe2MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni2MnGa, although the pinning in the recent work is an epitaxial interface and in this work the effective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.
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75.60.Ch Domain walls and domain structure
81.30.Kf Martensitic transformations
81.40.Lm Deformation, plasticity, and creep
62.20.fg Shape-memory effect; yield stress; superelasticity
64.70.K- Solid-solid transitions
75.50.Bb Fe and its alloys

Frequency-selective control of ferromagnetic resonance linewidth in magnetic multilayers

S. Schäfer, N. Pachauri, C. K. A. Mewes, T. Mewes, C. Kaiser, Q. Leng, and M. Pakala

Appl. Phys. Lett. 100, 032402 (2012); http://dx.doi.org/10.1063/1.3678025 (3 pages) | Cited 1 time

Online Publication Date: 18 January 2012

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We report on a frequency-specific linewidth broadening of the ferromagnetic resonance (FMR) mode of a NiFe free layer within a magnetic multilayer stack. The FMR studies reveal a significant broadening of the FMR linewidth of the free layer at frequencies where this resonance is degenerate with FMR modes stemming from other layers within the multilayer stack. By pinning part of the magnetic multilayer to an antiferromagnet, we tailor a ferromagnetic linewidth behavior that is anisotropic for a specific frequency.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Bb Fe and its alloys
75.50.Ee Antiferromagnetics

Half-metallicity, magnetic moments, and gap states in oxygen-deficient magnetite for spintronic applications

R. Arras, L. Calmels, and B. Warot-Fonrose

Appl. Phys. Lett. 100, 032403 (2012); http://dx.doi.org/10.1063/1.3678028 (3 pages) | Cited 3 times

Online Publication Date: 18 January 2012

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The electronic structure near oxygen vacancies in half-metallic magnetite has been calculated using first principles methods. Oxygen vacancies are responsible for the existence of gap states occupied by majority and minority spin electrons. We discuss whether these defects modify the spin magnetic moments, the magnetization, the magnetic coupling between Fe ions, and the half-metallic behaviour of magnetite. These results, which contribute to remove stumbling blocks to magnetite-based spintronic devices, could be useful to analyze the conductivity, the magnetotransport and magnetic properties, the electron and optical spectra of actual magnetite electrodes.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.jd Vacancies
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Sk Insulators

Room temperature ferromagnetism in transparent Fe-doped In2O3 films

H. Kim, M. Osofsky, M. M. Miller, S. B. Qadri, R. C. Y. Auyeung, and A. Piqué

Appl. Phys. Lett. 100, 032404 (2012); http://dx.doi.org/10.1063/1.3678038 (3 pages) | Cited 9 times

Online Publication Date: 18 January 2012

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Fe-doped In2O3 thin films were deposited on MgO substrates by pulsed laser deposition (PLD). The linear decrease in lattice constant with increasing Fe concentration of up to 18% suggests the incorporation of Fe atoms into In2O3 lattice matrix. The PLD grown films exhibited ferromagnetism at room temperature with a strong magnetic anisotropy. The observed anomalous Hall effect (AHE) indicates that spin polarized charge carriers play an important role in the origin of ferromagnetism in these oxides. Our observations, including AHE, magnetic anisotropy, and structural analysis provide strong evidence of intrinsic ferromagnetism at room temperature in these materials.
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75.70.Ak Magnetic properties of monolayers and thin films
78.66.Li Other semiconductors
81.05.Hd Other semiconductors
73.61.Le Other inorganic semiconductors
75.30.Gw Magnetic anisotropy
75.50.Dd Nonmetallic ferromagnetic materials

High power and low critical current spin torque oscillation from a magnetic tunnel junction with a built-in hard axis polarizer

Yisong Zhang, Hui Zhao, Andrew Lyle, Paul A. Crowell, and Jian-Ping Wang

Appl. Phys. Lett. 100, 032405 (2012); http://dx.doi.org/10.1063/1.3679082 (4 pages) | Cited 2 times

Online Publication Date: 19 January 2012

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The microwave power and the critical current of spin torque oscillator (STO) devices with a built-in hard axis polarizer have been studied. This design allows for an external-field-free STO. The time domain oscillation signals give direct evidence of higher output from the hard axis polarizer STO, which agrees with spectroscopic results. The hard axis polarizer STO generates a higher power because of the larger slope of the magnetoresistance-angle curve at the lowest energy potential. Furthermore, the hard axis polarizer STO shows a low critical current indicating the large spin torque effect when two magnetic layers are in the 90° configuration.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
84.30.Ng Oscillators, pulse generators, and function generators
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