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16 Jan 2012

Volume 100, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages)

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros
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Uniform charging energy of single-electron transistors by using size-controlled Au nanoparticles

Norio Okabayashi, Kosuke Maeda, Taro Muraki, Daisuke Tanaka, Masanori Sakamoto, Toshiharu Teranishi, and Yutaka Majima

Appl. Phys. Lett. 100, 033101 (2012); http://dx.doi.org/10.1063/1.3676191 (3 pages) | Cited 6 times

Online Publication Date: 17 January 2012

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Single-electron transistors have the potential to become next-generation nanodevices and sensors owing to their small size, low power consumption, and high charge sensitivity, where the charging energy of the devices is the most important parameter determining the operational temperature. Here, we have demonstrated that the charging energy of single-electron transistors can be controlled (48 ± 4 meV) by adopting electroless gold plating to make separation-defined nanogap electrodes and employing size-controlled chemically synthesized Au nanoparticles (5.2 ± 0.5 nm) as a Coulomb island. At this charging energy, the devices can be operated up to 160 K with on/off current ratio of 60%.
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85.35.Gv Single electron devices

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

Yu. I. Mazur, V. G. Dorogan, G. J. Salamo, G. G. Tarasov, B. L. Liang, C. J. Reyner, K. Nunna, and D. L. Huffaker

Appl. Phys. Lett. 100, 033102 (2012); http://dx.doi.org/10.1063/1.3676274 (4 pages) | Cited 5 times

Online Publication Date: 17 January 2012

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Antimony-incorporated InAsSb quantum dots (QDs) are grown by molecular beam epitaxy on GaAs(001) substrates. The QD density increases ∼7 times while the QD height decreases ∼50% due to the increase of QD nucleation sites after Sb incorporation into the GaAs buffer layer and into the InAs QDs. These Sb-incorporated InAsSb QDs show red-shift in the photoluminescence (PL) spectrum and large energy separation between confined energy levels. More interestingly, besides the typical type-I QD transition, an additional peak from the recombination at wetting layer interface develops as the excitation laser intensity increases. This peak clearly exhibits type-II characteristics from the measurement of a large blue-shift of the PL peak and a long PL decay time. Finally, the mechanism of the coexistence of type-I and type-II band alignments is discussed.
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71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Graphene thickness-graded transistors with reduced electronic noise

Guanxiong Liu, Sergey Rumyantsev, Michael Shur, and Alexander A. Balandin

Appl. Phys. Lett. 100, 033103 (2012); http://dx.doi.org/10.1063/1.3676277 (3 pages) | Cited 8 times

Online Publication Date: 17 January 2012

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The authors demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene.
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85.30.Tv Field effect devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.48.Gh Structure of graphene
68.65.Pq Graphene films
81.05.ue Graphene
07.50.Hp Electrical noise and shielding equipment

Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

K. M. Gambaryan, V. M. Aroutiounian, V. G. Harutyunyan, O. Marquardt, and P. G. Soukiassian

Appl. Phys. Lett. 100, 033104 (2012); http://dx.doi.org/10.1063/1.3676437 (4 pages) | Cited 3 times

Online Publication Date: 17 January 2012

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Quaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample.
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81.16.-c Methods of micro- and nanofabrication and processing
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mm Fracture
75.85.+t Magnetoelectric effects, multiferroics
61.46.-w Structure of nanoscale materials
68.65.Hb Quantum dots (patterned in quantum wells)

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O2−δ thin films

K. Mohan Kant, V. Esposito, and N. Pryds

Appl. Phys. Lett. 100, 033105 (2012); http://dx.doi.org/10.1063/1.3676659 (3 pages) | Cited 3 times

Online Publication Date: 17 January 2012

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Strained epitaxial Ce0.9Gd0.1O2−δ (CGO) thin films are deposited on MgO(001) substrates with SrTiO3 (STO) buffer layers. The strain in CGO epitaxial thin films is induced and controlled by varying the thickness of STO buffer layers. The induced strain is found to significantly enhance the in-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity.
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66.30.hd Ionic crystals
68.55.-a Thin film structure and morphology

Composition dependent nanocolumn tilting angle during the oblique angle co-deposition

Yiping Zhao, Yuping He, and Cameron Brown

Appl. Phys. Lett. 100, 033106 (2012); http://dx.doi.org/10.1063/1.3676665 (3 pages) | Cited 2 times

Online Publication Date: 17 January 2012

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During the oblique angle co-deposition of Si and Cu, the nanoculumn tilting angle β changes systematically with the relative composition of Si and Cu when the vapor incident angle θ is fixed. This result demonstrates that the β-θ relationship does depend closely on the material property and composition, which is very different from the predictions of the well-known “universal” models, such as tangent or cosine rules. A statistic model based on the size, spacing, and stacking of Si and Cu atoms has been proposed and the predicted result agrees well with the experimental data.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Aa Theory and models of film growth
81.16.-c Methods of micro- and nanofabrication and processing
68.55.-a Thin film structure and morphology

Near-field optical imaging with a nanotip grown on fibered polymer microlens

Zohreh Sedaghat, Anna Rumyantseva, Aurélien Bruyant, Sergei Kostcheev, Sylvain Blaize, Safi Jradi, Renaud Bachelot, and Antoine Monmayrant

Appl. Phys. Lett. 100, 033107 (2012); http://dx.doi.org/10.1063/1.3676669 (3 pages) | Cited 1 time

Online Publication Date: 17 January 2012

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Pointed carbon nanotips have been deposited on polymer microlensed optical fibers and used as highly resolving scattering nanoprobes. Optical characterizations supported by simulations demonstrate an efficient spatial filtering where the light scattered by the carbon tip is selectively coupled into the fiber core. As an application, a channel surface waveguide was characterized in collection mode. A special attention was given to the polarization response, and the s-polarized field is found to be slightly favored due to the detection direction. The proposed hybrid probe’s robustness, the symmetric detection and design flexibility it offers, makes it an attractive tool for nano-optics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Role of RuO3 for the formation of RuO2 nanorods

Denis Music, Johannes Breunung, Stanislav Mráz, and Jochen M. Schneider

Appl. Phys. Lett. 100, 033108 (2012); http://dx.doi.org/10.1063/1.3677665 (4 pages) | Cited 1 time

Online Publication Date: 17 January 2012

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We have observed Ru hyperoxides (RuO3 and RuO4) in Ru–O2–Ar plasmas using mass-energy analysis. Based on ab initio adsorption data, a nanorod formation model is presented. RuO3 exhibits the strongest adsorption on RuO2(001). Adatoms impinging on these RuO3 islands are likely to contribute towards three-dimensional growth due to Ehrlich-Schwoebel barriers. We propose that RuO3 islands act as nucleation sites for the nanorod formation. Our model is consistent with available experimental data.
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81.16.-c Methods of micro- and nanofabrication and processing
68.35.B- Structure of clean surfaces (and surface reconstruction)
52.77.-j Plasma applications
68.43.Mn Adsorption kinetics
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Multifunctional silicon inspired by a wing of male Papilio ulysse

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages) | Cited 2 times

Online Publication Date: 17 January 2012

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Effective entrapment of air and light is a key element for maintaining stable superhydrophobicity and enhancing anti-reflection or absorption. Inspired by a wing of male Papilio ulysse having a unique structure for enabling effective trapping of air and light, we demonstrate that the structure consisting of well-defined multilayer decorated by nanostructures can be obtained on a silicon wafer by a simple microelectromechanical process, consequently resulted in stable superhydrophobocity under static and dynamic conditions, and strong wideband optical absorption.
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81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
68.08.Bc Wetting
42.79.Wc Optical coatings
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Graphene-protein bioelectronic devices with wavelength-dependent photoresponse

Ye Lu, Mitchell B. Lerner, Zhengqing John Qi, Joseph J. Mitala, Jr., Jong Hsien Lim, Bohdana M. Discher, and A. T. Charlie Johnson

Appl. Phys. Lett. 100, 033110 (2012); http://dx.doi.org/10.1063/1.3678024 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2012

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We implemented a nanoelectronic interface between graphene field effect transistors (FETs) and soluble proteins. This enables production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. The method serves to link polyhistidine-tagged proteins to graphene FETs using the tag itself. Atomic force microscopy and Raman spectroscopy provide structural understanding of the bio/nano hybrid; current-gate voltage measurements are used to elucidate the electronic properties. As an example application, we functionalize graphene FETs with fluorescent proteins to yield hybrids that respond to light at wavelengths defined by the optical absorption spectrum of the protein.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
36.20.Ng Vibrational and rotational structure, infrared and Raman spectra
87.15.mq Luminescence
87.14.E- Proteins

Chemical sensors based on randomly stacked graphene flakes

Amin Salehi-Khojin, David Estrada, Kevin Y. Lin, Ke Ran, Richard T. Haasch, Jian-Min Zuo, Eric Pop, and Richard I. Masel

Appl. Phys. Lett. 100, 033111 (2012); http://dx.doi.org/10.1063/1.3676276 (4 pages) | Cited 3 times

Online Publication Date: 18 January 2012

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We demonstrate a simple fabrication method to produce randomly stacked graphene chemiresistors using surfactant-assisted exfoliation of graphite. We analyze the sensitivity of such chemiresistors as a function of vacuum filtration volume and temperature. At low vacuum filtration volumes (<∼5 mL) the sensors exhibit superior sensitivity towards target molecules compared to previously developed polycrystalline graphene, polycrystalline graphene microribbon, and carbon nanotube chemical sensors. Temperature dependent measurements, transmission electron microscopy and scanning electron microscopy suggest the improved sensitivity in the randomly stacked graphene chemiresistors is due to 2-dimensional charge carrier hopping through edge defects.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Modulation and cancellation of the Casimir force by using radiation pressure

A. A. Banishev, C.-C. Chang, R. Zandi, and U. Mohideen

Appl. Phys. Lett. 100, 033112 (2012); http://dx.doi.org/10.1063/1.3678189 (3 pages)

Online Publication Date: 18 January 2012

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We demonstrate the cancellation and dynamic modulation of the Casimir force by using transparent electrodes and radiation pressure. The attractive Casimir force between the two surfaces is balanced by radiation pressure on the first surface from light transmitted through the second transparent surface. The cancellation and dynamic modulation of dispersion forces will find applications in the design and enhanced performance of micro- and nanoelectro mechanical systems.
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07.10.Cm Micromechanical devices and systems

Gate tunable non-linear currents in bilayer graphene diodes

Hiroki Shioya, Michihisa Yamamoto, Saverio Russo, Monica F. Craciun, and Seigo Tarucha

Appl. Phys. Lett. 100, 033113 (2012); http://dx.doi.org/10.1063/1.3676441 (4 pages) | Cited 4 times

Online Publication Date: 18 January 2012

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Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top-gated electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show that the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 to 130 meV.
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73.61.Wp Fullerenes and related materials
72.80.Vp Electronic transport in graphene
73.40.Ei Rectification

Nanosized precipitates in half-Heusler TiNiSn alloy

Yaw Wang Chai and Yoshisato Kimura

Appl. Phys. Lett. 100, 033114 (2012); http://dx.doi.org/10.1063/1.3679377 (3 pages) | Cited 4 times

Online Publication Date: 19 January 2012

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The microstructure of half-Heusler TiNiSn alloy has been investigated in this study. A high density of coherent nanosized Heusler precipitates was found within the half-Heusler matrix. Formation of these Heusler precipitates occurs by a phase separation process, where a single phase solid solution (half-Heusler-Heusler) decomposes into an equilibrium two-phase mixture of half-Heusler and Heusler regions. These Heusler nanoprecipitates improve the thermoelectric properties of the alloy.
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81.30.Mh Solid-phase precipitation
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.15.Jf Thermoelectric and thermomagnetic effects
72.20.Pa Thermoelectric and thermomagnetic effects
75.50.Cc Other ferromagnetic metals and alloys
75.50.Pp Magnetic semiconductors

Probing transconductance spatial variations in graphene nanoribbon field-effect transistors using scanning gate microscopy

A. Soudi, G. Aivazian, S.-F. Shi, X. D. Xu, and Y. Gu

Appl. Phys. Lett. 100, 033115 (2012); http://dx.doi.org/10.1063/1.3678034 (4 pages) | Cited 2 times

Online Publication Date: 19 January 2012

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We have used scanning gate microscopy to probe local transconductance in graphene nanoribbon (GNR) field-effect transistors (FETs) fabricated from chemical vapor deposition-grown graphene. Particularly, nanometer-scale (≤100 nm, resolution limited) areas characterized by significant transconductance spatial variations were observed along the FET channel. These were attributed to the impurities at or close to the edges of the GNRs. Our results further show that a single such impurity site in a long-channel (∼2 μm) GNR FET can essentially control the global device characteristics. This finding demonstrates the importance of controlling the spatial inhomogeneity of electronic properties in graphene and related nanostructures in order to realize their envisioned applications in new electronics.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices

Mode tuning of photonic crystal nanocavities by photoinduced non-thermal oxidation

Francesca Intonti, Niccolò Caselli, Silvia Vignolini, Francesco Riboli, Santosh Kumar, Armando Rastelli, Oliver G. Schmidt, Marco Francardi, Annamaria Gerardino, Laurent Balet, Lianhe H. Li, Andrea Fiore, and Massimo Gurioli

Appl. Phys. Lett. 100, 033116 (2012); http://dx.doi.org/10.1063/1.3678036 (4 pages) | Cited 4 times

Online Publication Date: 20 January 2012

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A method to achieve photoinduced tuning of PhC nanocavity modes is discussed and implemented. It is based on light induced oxidation in air atmosphere with very low thermal budget which produces a local reduction of the GaAs membrane effective thickness and a large blueshift of the nanocavity modes. It is also shown that green light is much more efficient in inducing the micro-oxidation with respect to near infrared light. The observed behaviour is attributed to oxide growth promoted by photoenhanced reactivity.
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42.70.Qs Photonic bandgap materials
42.79.-e Optical elements, devices, and systems
81.65.Mq Oxidation

Gallium-droplet behaviors of self-catalyzed GaAs nanowires: A transmission electron microscopy study

Young Heon Kim, Dong Woo Park, and Sang Jun Lee

Appl. Phys. Lett. 100, 033117 (2012); http://dx.doi.org/10.1063/1.3678185 (4 pages) | Cited 3 times

Online Publication Date: 20 January 2012

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When the arsenic (As) precursor was supplied during cool down, the gallium (Ga) droplets on top of GaAs nanowires (NWs) were extinct on the final products. The Ga droplets were conserved, and their behaviors depended on the size of the NWs when the As supply was cut off during the cooling: The contact angles of the droplets on the NWs with diameters larger than 60 nm were fixed to approximately 113°. However, they were decreased and fluctuated on the NWs less than 60 nm in diameter. Finally, the NWs less than 46 nm were free from the Ga droplet.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
47.55.D- Drops and bubbles
68.03.Cd Surface tension and related phenomena
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Enhancing interwall load transfer by vacancy defects in carbon nanotubes

David Santo Pietro, Chun Tang, and Changfeng Chen

Appl. Phys. Lett. 100, 033118 (2012); http://dx.doi.org/10.1063/1.3678342 (4 pages) | Cited 3 times

Online Publication Date: 20 January 2012

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Structural defects usually reduce the load carrying capacity of materials. Here, we show by molecular dynamics simulations an anomalous vacancy-defect-induced enhancement of interwall load transfer in annealed carbon nanotubes (CNTs). The large increase of load transfer mainly stems from the hybrid sp2-sp3 interwall bonds at the vacancy edges, which are stronger than the sp3 interwall bonds in pristine CNTs. This finding offers insights for better understanding and designing CNT-based high-performance nanocomposites.
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61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
61.72.jd Vacancies
61.46.Fg Nanotubes
81.07.De Nanotubes
81.40.Gh Other heat and thermomechanical treatments

Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

Ting-Wei Yeh, Yen-Ting Lin, Byungmin Ahn, Lawrence S. Stewart, P. Daniel Dapkus, and Steven R. Nutt

Appl. Phys. Lett. 100, 033119 (2012); http://dx.doi.org/10.1063/1.3671182 (3 pages) | Cited 6 times

Online Publication Date: 20 January 2012

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We demonstrate that nonpolar m-plane surfaces can be generated on uniform GaN nanosheet arrays grown vertically from the (0001)-GaN bulk material. InGaN/GaN multiple quantum wells (MQWs) grown on the facets of these nanosheets are demonstrated by cross-sectional transmission electron microscopy. Owing to the high aspect ratio of the GaN nanosheet structure, the MQWs predominantly grow on nonpolar GaN planes. The results suggest that GaN nanosheets provide a conduction path for device fabrication and also a growth template to reduce the piezoelectric field inside the active region of InGaN-based light emitting diodes.
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85.60.Jb Light-emitting devices
68.65.Fg Quantum wells
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