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16 Jan 2012

Volume 100, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 033109 (2012); http://dx.doi.org/10.1063/1.3664636 (3 pages)

Sang H. Yun, Hyung-Seok Lee, Young Ha Kwon, Mats Göthelid, Sang Mo Koo, Lars Wågberg, Ulf O. Karlsson, and Jan Linnros
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Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Peter G. Muzykov, Ramesh M. Krishna, and Krishna C. Mandal

Appl. Phys. Lett. 100, 032101 (2012); http://dx.doi.org/10.1063/1.3676270 (4 pages) | Cited 2 times

Online Publication Date: 17 January 2012

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We have investigated temperature dependence (94 K–650 K) of current conduction in semi-insulating 4H-SiC epitaxial layer. The epitaxial layer was grown on highly doped n-type (0001) 4H-SiC substrate using chemical vapor deposition with dichlorosilane precursor. The current—voltage (I-V) characteristics exhibited steps at ∼1 V and ∼70 V that were attributed to the filling of deep level centers by injected electrons. Correlation of the I-V characteristics with the results of thermally stimulated current measurements showed that deep centers peaked at 242 K, 285 K, and 500 K, were responsible for the steps in the I-V characteristics. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance.
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73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

Punam Silwal, Ludi Miao, Ilan Stern, Xiaolan Zhou, Jin Hu, and Dae Ho Kim

Appl. Phys. Lett. 100, 032102 (2012); http://dx.doi.org/10.1063/1.3676439 (3 pages)

Online Publication Date: 17 January 2012

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We have grown epitaxial thin films of spinel NiCo2O4 on single crystalline MgAl2O4 (001) substrates by pulsed laser deposition. Magnetization measurement revealed hysteresis loops consistent with the reported ferrimagnetic order. The electrical transport exhibits a metallic behavior with the lowest resistivity of 0.8 mΩ cm and a metal insulator transition around the Néel temperature. The systematic variation in the properties of the films grown at different growth temperatures indicates a close relationship between the magnetic order and electrical transport.
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71.30.+h Metal-insulator transitions and other electronic transitions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
68.55.at Other materials

Surface transfer doping of diamond with a molecular heterojunction

D. P. Langley, Y. Smets, C. B. Stark, M. T. Edmonds, A. Tadich, K. J. Rietwyk, A. Schenk, M. Wanke, Q.-H. Wu, P. J. Barnard, L. Ley, and C. I. Pakes

Appl. Phys. Lett. 100, 032103 (2012); http://dx.doi.org/10.1063/1.3676445 (4 pages) | Cited 3 times

Online Publication Date: 17 January 2012

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Surface conductivity and C1s core level measurements were employed to show that surface transfer doping of hydrogen-terminated diamond C(100) can be achieved with a molecular heterojunction formed with C60F48 and an intralayer of zinc-tetraphenylporphyrin. Measurement of the shift in the diamond Fermi energy shows that the zinc-tetraphenylporphyrin (ZnTPP) layer modifies the C60F48–diamond interaction, modulating the extent of charge transfer between the diamond and the fluorofullerene. In contrast to the case of C60F48 acceptors, the presence of a ZnTPP layer prevents the formation of air-induced surface conductivity, showing that the intralayer acts to selectively separate these two doping channels.
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73.20.At Surface states, band structure, electron density of states
73.25.+i Surface conductivity and carrier phenomena

Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

Julien Vidal, Stephan Lany, Mayeul d’Avezac, Alex Zunger, Andriy Zakutayev, Jason Francis, and Janet Tate

Appl. Phys. Lett. 100, 032104 (2012); http://dx.doi.org/10.1063/1.3675880 (4 pages) | Cited 11 times

Online Publication Date: 17 January 2012

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SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.
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71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Pz Photoconduction and photovoltaic effects
61.72.J- Point defects and defect clusters
61.72.jd Vacancies

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Hongtao He, Baikui Li, Hongchao Liu, Xin Guo, Ziyan Wang, Maohai Xie, and Jiannong Wang

Appl. Phys. Lett. 100, 032105 (2012); http://dx.doi.org/10.1063/1.3677669 (3 pages) | Cited 14 times

Online Publication Date: 17 January 2012

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Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films.
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73.61.Ng Insulators
72.20.My Galvanomagnetic and other magnetotransport effects
73.20.At Surface states, band structure, electron density of states

Inelastic carrier lifetime in bilayer graphene

Cheol-Hwan Park, Feliciano Giustino, Catalin D. Spataru, Marvin L. Cohen, and Steven G. Louie

Appl. Phys. Lett. 100, 032106 (2012); http://dx.doi.org/10.1063/1.3675877 (3 pages)

Online Publication Date: 19 January 2012

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We present a first-principles calculation of the inelastic carrier lifetimes in pristine and doped bilayer graphene. The scattering rate arising from electron-electron interactions is smaller than that in graphene by 20–40% on average, and is highly anisotropic. On the other hand, the scattering rate arising from electron-phonon interactions is similar in magnitude to that in graphene and is isotropic.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.15.-m Methods of electronic structure calculations
71.38.-k Polarons and electron-phonon interactions

A tunable, dual mode field-effect or single electron transistor

B. Roche, B. Voisin, X. Jehl, R. Wacquez, M. Sanquer, M. Vinet, V. Deshpande, and B. Previtali

Appl. Phys. Lett. 100, 032107 (2012); http://dx.doi.org/10.1063/1.3678042 (3 pages) | Cited 4 times

Online Publication Date: 20 January 2012

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A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
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85.35.Gv Single electron devices
85.30.Tv Field effect devices

Growth orientation dependent photoluminescence of GaAsN alloys

Xiuxun Han, Tomohiro Tanaka, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi, and Shinichiro Sato

Appl. Phys. Lett. 100, 032108 (2012); http://dx.doi.org/10.1063/1.3679079 (4 pages)

Online Publication Date: 20 January 2012

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We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.
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78.55.Cr III-V semiconductors
61.72.jd Vacancies
68.55.ag Semiconductors
61.80.Fe Electron and positron radiation effects
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