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Applied Physics Letters / Volume 100 / Issue 4 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 041119 (2012); http://dx.doi.org/10.1063/1.3681162 (4 pages)

Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes

Dong-Yul Lee, Sang-Heon Han, Dong-Ju Lee, Jeong Wook Lee, Dong-Joon Kim, Young Sun Kim, and Sung-Tae Kim

Samsung LED Co. Ltd., Suwon 443-743, South Korea

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(Received 7 October 2011; accepted 12 January 2012; published online 27 January 2012)

We report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). Electric-field-dependent ER measurements showed an enhanced piezoelectric field in LEDs with a p-AlGaN EBL compared with LEDs without EBL. In contrast, LEDs with a p-AlGaN EBL exhibited reduced blueshift and a sublinear increase of full width at half maximum in EL spectra at low current densities. These behaviors can be explained by the strong localization of injected carriers in dominant InGaN regions due to an increase of the piezoelectric field by subsequent growing EBL.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

current density, electroluminescence, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, quantum well devices, semiconductor quantum wells, wide band gap semiconductors

PACS

  • 85.60.Jb

    Light-emitting devices

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

International Patent Classification (IPC)

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3681162

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    S.-H. Park and S.-L. Chuang, Appl. Phys. Lett. 72, 3103 (1998)APPLAB000072000024003103000001.

    T. M. Hsu, C. Y. Lai, W.-H. Chang, C.-C. Pan, C.-C. Chuo, and J.-I. Chyi, Appl. Phys. Lett. 84, 1114 (2004)APPLAB000084000007001114000001.

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