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Applied Physics Letters / Volume 100 / Issue 4 / SURFACES AND INTERFACES

Appl. Phys. Lett. 100, 041601 (2012); http://dx.doi.org/10.1063/1.3679379 (3 pages)

Direct patterning of functional interfaces in oxide heterostructures

N. Banerjee, M. Huijben, G. Koster, and G. Rijnders

Faculty of Science & Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands

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(Received 23 November 2011; accepted 5 January 2012; published online 23 January 2012)

We report on the direct patterning of high-quality structures incorporating the LaAlO3-SrTiO3 interface by an epitaxial-liftoff technique avoiding any reactive ion beam etching. Detailed studies of temperature dependent magnetotransport properties were performed on the patterned heterostructures with variable thickness of the LaAlO3 layer and compared to their unstructured thin film analogues. The results demonstrate the conservation of the high-quality interface properties in the patterned structures enabling future studies of low-dimensional confinement on high mobility interface conductivity as well as interface magnetism.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

galvanomagnetic effects, interface magnetism, interface structure, lanthanum compounds, nanopatterning, sputter etching, strontium compounds

PACS

  • 81.16.Rf

    Micro- and nanoscale pattern formation

  • 68.35.Ct

    Interface structure and roughness

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

International Patent Classification (IPC)

  • B82B3/00

    Manufacture or treatment of nano-structures

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679379

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. W. Schneider, S. Thiel, G. Hammerl, C. Richter, and J. Mannhart, Appl. Phys. Lett. 89, 122101 (2006)APPLAB000089000012122101000001.

    C. Bell, S. Harashima, Y. Kozuka, M. Kim, B. G. Kim, Y. Hikita, and H. Y. Hwang, Phys. Rev. Lett. 103, 226802 (2009).

    C. Bell, S. Harashima, Y. Hikita, and H. Y. Hwang, Appl. Phys. Lett. 94, 222111 (2009)APPLAB000094000022222111000001.

    R. Pentcheva, M. Huijben, K. Otte, W. E. Pickett, J. E. Kleibeuker, J. Huijben, H. Boschker, D. Kockmann, W. Siemons, G. Koster et al., Phys. Rev. Lett. 104, 166804 (2010).


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