APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 4 / STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

Appl. Phys. Lett. 100, 041906 (2012); http://dx.doi.org/10.1063/1.3679611 (3 pages)

Growth sector dependence and mechanism of stress formation in epitaxial diamond growth

M. Fischer1, S. Gsell1, M. Schreck1, and A. Bergmaier2

1Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
2Universität der Bundeswehr, Institut für Angewandte Physik und Messtechnik LRT2, D-85577 Neubiberg, Germany

View MapView Map

(Received 14 October 2011; accepted 9 January 2012; published online 26 January 2012)

Stress generation in epitaxial diamond growth was investigated by μ-Raman spectroscopy and high resolution x-ray diffraction. Intrinsic stress could be varied systematically from compressive to tensile covering a huge range of 5 GPa. The temperature-stress curve for growth on {111}-sectors as compared to {001} shows a shift of −200 °C or +2 GPa. A crucial role of hydrogen in the stress formation process is excluded. Due to the absence of grain boundaries, a model is proposed which is based on the “effective climb” of individual dislocations. The controlled generation of stress profiles offers a powerful concept for strengthening diamond mechanical devices.

© 2012 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS, PACS, and IPC

Keywords

chemical vapour deposition, compressive strength, diamond, dislocation climb, epitaxial growth, epitaxial layers, Raman spectra, stress analysis, tensile strength, X-ray diffraction

PACS

  • 68.55.aj

    Insulators

  • 78.30.Na

    Fullerenes and related materials

  • 78.66.Tr

    Fullerenes and related materials

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 81.40.Lm

    Deformation, plasticity, and creep

  • 62.20.fg

    Shape-memory effect; yield stress; superelasticity

International Patent Classification (IPC)

  • C23C16/00

    Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679611

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    X. Xiao, B. W. Sheldon, Y. Qi, and A. K. Kothari, Appl. Phys. Lett. 92, 131908 (2008)APPLAB000092000013131908000001.

    Y. Qi, B. W. Sheldon, H. Guo, X. Xiao, and A. K. Kothari, Phys. Rev. Lett. 102, 056101 (2009).

    M. Mermoux, B. Marcus, A. Crisci, A. Tajani, E. Gheeraert, and E. Bustarret, J. Appl. Phys. 97, 043530 (2005)JAPIAU000097000004043530000001.

    M. Schreck, F. Hörmann, H. Roll, J. K. N. Lindner, and B. Stritzker, Appl. Phys. Lett. 78, 192 (2001)APPLAB000078000002000192000001.

    S. Gsell, T. Bauer, J. Goldfuß, M. Schreck, and B. Stritzker, Appl. Phys. Lett. 84, 4541 (2004)APPLAB000084000022004541000001.

    S. Gsell, M. Fischer, R. Brescia, M. Schreck, P. Huber, F. Bayer, B. Stritzker, and D. G. Schlom, Appl. Phys. Lett. 91, 061501 (2007)APPLAB000091000006061501000001.

    M. Schreck, A. Schury, F. Hörmann, H. Roll, and B. Stritzker, J. Appl. Phys. 91, 676 (2002)JAPIAU000091000002000676000001.

    X. Jiang, W. J. Zhang, M. Paul, and C.-P. Klages, Appl. Phys. Lett. 68, 1927 (1996)APPLAB000068000014001927000001.

    I. Sakaguchi, M. Nishitani-Gamo, K. P. Loh, S. Hishita, H. Haneda, and T. Ando, Appl. Phys. Lett. 73, 2675 (1998)APPLAB000073000018002675000001.

    S. A. Stuart, S. Prawer, and P. S. Weiser, Appl. Phys. Lett. 62, 1227 (1993)APPLAB000062000011001227000001.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Growth sector dependence and mechanism of stress formation in epitaxial diamond growth
  2. Direct patterning of functional interfaces in oxide heterostructures
  3. Evidence of ferroelectricity and phase transition in pressed diphenylalanine peptide nanotubes
  4. Ceasing of voltage switching amongst graphitic shells in multiwalled carbon nanotubes: A route toward stability
  5. Side-dependent electron escape from graphene- and graphane-like SiC layers
Go to AIP Home
Copyright © American Institute of Physics
close