APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 4 / SEMICONDUCTORS

Appl. Phys. Lett. 100, 042105 (2012); http://dx.doi.org/10.1063/1.3680093 (4 pages)

Recoverable electrical transition in a single graphene sheet for application in nonvolatile memories

Chaoxing Wu, Fushan Li, Yongai Zhang, and Tailiang Guo

Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002, People’s Republic of China

View MapView Map

(Received 19 August 2011; accepted 9 January 2012; published online 25 January 2012)

The electrical properties of a resistive-switching memory based on a single graphene sheet suspended on a patterned indium-tin-oxide electrode pair were investigated. Current-voltage measurements on the planar device showed a large ON/OFF ratio (∼106) and excellent retention ability in ambient conditions. Data storage of the device can be realized by applying voltage bias and rewritten after simple heat treatment. Switching mechanisms for the graphene-based memory device were found to be related to the local oxidation of graphene sheet at the graphene/electrode interface.

© 2012 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS, PACS, and IPC

Keywords

electrical resistivity, graphene, heat treatment, indium compounds, random-access storage, tin compounds

PACS

International Patent Classification (IPC)

  • C22F1/00

    Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working

  • C21D1/00

    General methods or devices for heat treatment, e.g. annealing, hardening, quenching, tempering

  • H04N5/907

    Using static stores, e.g. storage tubes, semiconductor memories

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3680093

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Moser, A. Barreiro, and A. Bachtold, Appl. Phys. Lett. 91, 163513 (2007)APPLAB000091000016163513000001.

    M. Muller, M. Brauninger, and B. Trauzettel, Phys. Rev. Lett. 103, 196801 (2009).

    G. Liu, X. Zhuang, Y. Chen, B. Zhang, J. Zhu, C. Zhu, K. Neoh, and E. Kang, Appl. Phys. Lett. 95, 253301 (2009)APPLAB000095000025253301000001.

    F. Li, T. Kim, W. Dong, and Y. Kim, Appl. Phys. Lett. 92, 011906 (2008)APPLAB000092000001011906000001.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Recoverable electrical transition in a single graphene sheet for application in nonvolatile memories
  2. Effect of uni-axial strain on THz/far-infrared response of graphene
  3. Synthesis of single-component metallic glasses by thermal spray of nanodroplets on amorphous substrates
  4. Surface modification by subsurface pressure induced diffusion
  5. A mathematical model of mixing enhancement in microfluidic channel with a constriction under periodic electro-osmotic flow
Go to AIP Home
Copyright © American Institute of Physics
close