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Applied Physics Letters / Volume 100 / Issue 4 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 043104 (2012); http://dx.doi.org/10.1063/1.3679135 (4 pages)

Improved electron field emission from morphologically disordered monolayer graphene

Srikrishna Pandey1, Padmnabh Rai1,2, Shashikant Patole3, Fethullah Gunes3, Gi-Duk Kwon1, Ji-Beom Yoo3, Pavel Nikolaev1, and Sivaram Arepalli1

1Department of Energy Science, Sungkyunkwan University, Suwon 440746, South Korea
2Laboratoire Interdisciplinaire Carnot de Bourgogne, CNRS-UMR 6303, Université of Bourgogne, Dijon 21078, France
3Sungkyunkwan Advanced Institute of Nanotechnology and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440746, South Korea

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(Received 8 November 2011; accepted 4 January 2012; published online 24 January 2012)

Graphene was synthesized on copper foil by thermal chemical vapor deposition technique. To investigate the field electron emission property, planar graphene (PG) and morphologically disordered graphene (MDG) were fabricated on the doped silicon substrate by transfer of as-grown graphene. Incorporation of morphological disorder in graphene creates more emission sites due to the additional defects, edges, and atomic scale ripples. This resulted in (1) a dramatic increase in the maximum current density by a factor of 500, (2) considerable increase in the enhancement factor, and (3) decrease in the turn-on field of MDG compared to PG.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

chemical vapour deposition, current density, field emission electron microscopy, graphene

PACS

  • 81.05.ue

    Graphene

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 61.48.Gh

    Structure of graphene

International Patent Classification (IPC)

  • C23C16/00

    Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679135

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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