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Appl. Phys. Lett. 100, 043106 (2012); http://dx.doi.org/10.1063/1.3679621 (4 pages)

High magnetic field annealing effect on visible photoluminescence enhancement of TiO2 nanotube arrays

Mingjie Yang1,2, Wei Liu1, Jia-Lin Sun2, and Jia-Lin Zhu2

1Laboratory of Advanced Materials, Department of Material Science and Engineering, Tsinghua University, Beijing 100084, China
2State Key Lab of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

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(Received 22 November 2011; accepted 6 January 2012; published online 25 January 2012)

TiO2 nanotube arrays with remarkable visible photoluminescence were prepared by high magnetic field annealing in air at 450 °C due to the involvement of oxygen vacancies (OVs). A field with the intensities of 0, 2, 4, 6, and 8 T were applied in the annealing processing, along the directions set at 0°, 50°, and 90° from the surface normal of the substrate. The results demonstrated that the density of oxygen vacancies in TiO2 nanotubes can be controlled by varying the intensity and direction of the magnetic field. The mechanism for the effect of the high magnetic field has been investigated. This study opens an effective way to control the oxygen vacancies in nanomaterials to improve their performance.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

PACS

  • 75.60.Nt

    Magnetic annealing and temperature-hysteresis effects

  • 78.20.Ls

    Magneto-optical effects

  • 78.55.Hx

    Other solid inorganic materials

  • 78.67.Ch

    Nanotubes

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C21D1/04

    With simultaneous application of supersonic waves, magnetic or electric fields

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    B. D. Yao, Y. F. Chan, X. Y. Zhang, W. F. Zhang, Z. Y. Yang, and N. Wang, Appl. Phys. Lett. 82, 281 (2003)APPLAB000082000002000281000001.

    Y. Lei, L. D. Zhang, G. W. Meng, G. H. Li, X. Y. Zhang, C. H. Liang, W. Chen, and S. X. Wang, Appl. Phys. Lett. 78, 1125 (2001)APPLAB000078000008001125000001.

    J. P. Lin and J. M. Wu, Appl. Phys. Lett. 92, 134103 (2008)APPLAB000092000013134103000001.


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