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Applied Physics Letters / Volume 100 / Issue 4 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 043107 (2012); http://dx.doi.org/10.1063/1.3679639 (3 pages)

Effective energy gap of the double-walled carbon nanotubes with field effect transistors ambipolar characteristics

Takahiro Morimoto1, Akihiro Kuno1, Shota Yajima1, Koji Ishibashi1, Koji Tsuchiya2, and Hirofumi Yajima2

1Advanced Device Laboratory, Riken, 2-1, Hirosawa, Wako, Saitama 351-0198, Japan
2Department of Applied Chemistry, Tokyo University of Science, 1-3, Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan

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(Received 7 October 2011; accepted 6 January 2012; published online 26 January 2012)

We have investigated the transport property of the double-walled carbon nanotubes (DWCNT)-field effect transistor (FET) devices with HfO2 insulating layers at room temperature and 4.2 K. These devices show the ambipolar FET characteristics after deposition of HfO2 insulating layer. The off-regions of ambipolar behavior have clear dependence on their DWCNT diameter. The conversion factor of gate voltages and bias voltages is estimated from low temperature Coulomb Diamond measurement. Using same device structure and dimensions to all devices, these off-regions of threshold voltage are converted to effective energy gap. These energy gaps are in good agreement with theoretical predictions.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

energy gap

PACS

International Patent Classification (IPC)

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679639

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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