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Applied Physics Letters / Volume 100 / Issue 4 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 043109 (2012); http://dx.doi.org/10.1063/1.3679679 (4 pages)

Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels

J. Khan, C. M. Nolen, D. Teweldebrhan, D. Wickramaratne, R. K. Lake, and A. A. Balandin

Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California at Riverside, Riverside, California 92521, USA

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(Received 24 December 2011; accepted 6 January 2012; published online 26 January 2012)

The authors report on “graphene-like” mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

aluminium alloys, electron transport theory, field effect transistors, gold alloys, graphene, semimetallic thin films, titanium alloys, titanium compounds

PACS

  • 85.75.Hh

    Spin polarized field effect transistors

  • 68.55.-a

    Thin film structure and morphology

  • 73.61.-r

    Electrical properties of specific thin films

International Patent Classification (IPC)

  • C22C14/00

    Alloys based on titanium

  • C22C21/00

    Alloys based on aluminium

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679679

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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