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Applied Physics Letters / Volume 100 / Issue 4 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 043510 (2012); http://dx.doi.org/10.1063/1.3679114 (4 pages)

Spin transport in memristive devices

Hyuk-Jae Jang1,2, Oleg A. Kirillov1, Oana D. Jurchescu2, and Curt A. Richter1

1Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Drive, M.S. 8120, Gaithersburg, Maryland 20899, USA
2Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109, USA

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(Received 18 November 2011; accepted 2 January 2012; published online 26 January 2012)

We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOx memristive devices consisting of Co/TaOx/Cu/Py with crossbar-type electrode geometry. The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magnetoresistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77 K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

cobalt, copper, electrodes, electron spin polarisation, magnetoresistive devices, memristors, nanoelectronics, nanofabrication, tantalum compounds

PACS

  • 84.32.Ff

    Conductors, resistors (including thermistors, varistors, and photoresistors)

  • 85.35.-p

    Nanoelectronic devices

  • 85.70.Kh

    Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • H01C

    Resistors

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

  • H01L27/20

    Including piezo-electric components; Including electrostrictive components; Including magnetostrictive components

  • H01L27/22

    Including components using galvano-magnetic effects, e.g. hall effect; Using similar magnetic field effects

  • H01L41/00

    Piezo-electric elements in general; Electrostrictive elements in general; Magnetostrictive elements in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

  • H01L43/00

    Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof

  • H01L43/08

    Magnetic-field-controlled resistors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679114

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. J. Yang, M.-X Zhang, J. P. Strachan, F. Miao, M. D. Pickett, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, Appl. Phys. Lett. 97, 232102 (2010)APPLAB000097000023232102000001.

    T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, and M. Aono, Appl. Phys. Lett. 91, 092110 (2007)APPLAB000091000009092110000001.

    J. Mathon and A. Umerski, Phys. Rev. B 60, 1117 (1999).

    M. F. Gillies, A. E. T. Kuiper, J. B. A. van Zon, and J. M Sturm, Appl. Phys. Lett. 78, 3496 (2001)APPLAB000078000022003496000001.


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