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Applied Physics Letters / Volume 100 / Issue 4 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 043512 (2012); http://dx.doi.org/10.1063/1.3679132 (4 pages)

Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer

Chia-Tze Huang, Yu-Cheng Chen, and Si-Chen Lee

Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Photonics and Optoelectronics Engineering, National Taiwan University, Taipei 10617, Taiwan

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(Received 22 August 2011; accepted 4 January 2012; published online 27 January 2012)

The effect of a GaAs1−xSbx strain reducing layer on the performance of InAs/GaAs quantum-dot infrared photodetectors was investigated. The results suggest that increasing Sb composition x from 0 to 0.2 leads to an enhanced peak response and a pronounced narrowing of the band width of the spectral response from 3.3 to 1.5 μm. For a photodetector with GaAs0.8Sb0.2 strain reducing layer, the best responsivity obtained is 533 mA/W, which is 380 times higher than that without strain reducing layer. In addition, the operating temperature increases from 50 to 90 K when increasing Sb composition from 0 to 0.2.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

arsenic compounds, gallium arsenide, III-V semiconductors, indium compounds, infrared detectors, photodetectors, semiconductor quantum dots, ternary semiconductors

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 85.30.-z

    Semiconductor devices

International Patent Classification (IPC)

  • G01J1/00

    Photometry, e.g. photographic exposure meter

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

  • H01L31/101

    Devices sensitive to infra-red, visible or ultra-violet radiation

  • H04N5/33

    Transforming infra-red radiation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679132

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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