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23 Jan 2012

Volume 100, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 041101 (2012); http://dx.doi.org/10.1063/1.3675885 (4 pages)

Seung Ho Choi and Young L. Kim
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Extracting accurate capacitance voltage curves from impedance spectroscopy

Kay-Michael Guenther, Hartmut Witte, Alois Krost, Stefan Kontermann, and Wolfgang Schade

Appl. Phys. Lett. 100, 042101 (2012); http://dx.doi.org/10.1063/1.3679380 (4 pages)

Online Publication Date: 24 January 2012

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We propose a method to obtain accurate capacitance-voltage (C-V) curves in the presence of multiple space charges. This method uses impedance spectroscopy to evaluate individual space charges separately. The advantage is that the knowledge of the exact equivalent circuit is not essentially needed. The comparison with other methods to calculate the doping concentration NA shows that our method is unaffected by series resistances and agrees best with the correct value of NA. The evaluation of the impedance spectra leads to a more thorough understanding of the respective Mott-Schottky plots.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
61.72.U- Doping and impurity implantation
77.22.Jp Dielectric breakdown and space-charge effects
84.30.Bv Circuit theory

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Nadeemullah A. Mahadik, Robert E. Stahlbush, M. G. Ancona, Eugene A. Imhoff, Karl D. Hobart, Rachael L. Myers-Ward, Charles R. Eddy, Jr., D. Kurt Gaskill, and Fritz J. Kub

Appl. Phys. Lett. 100, 042102 (2012); http://dx.doi.org/10.1063/1.3679609 (3 pages) | Cited 2 times

Online Publication Date: 24 January 2012

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Stacking fault (SF) expansion from basal plane dislocations (BPDs) confined in highly doped 4H-SiC buffer layers is observed under high-power ultraviolet illumination (>1000 W/cm2). Once the SFs reach the active drift layers, grown above the buffer layers, they are seen to rapidly expand up to the sample surface where they can cause device degradation. BPD faulting in the buffer appears to have a carrier injection threshold. Carrier density simulations under various injection conditions and carrier lifetimes are used to establish the conditions of BPD faulting within the buffer layer that could prevent SF expansion into the drift layer.
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61.72.Nn Stacking faults and other planar or extended defects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

S. Wirths, M. Mikulics, P. Heintzmann, A. Winden, K. Weis, Ch. Volk, K. Sladek, N. Demarina, H. Hardtdegen, D. Grützmacher, and Th. Schäpers

Appl. Phys. Lett. 100, 042103 (2012); http://dx.doi.org/10.1063/1.3678639 (4 pages) | Cited 2 times

Online Publication Date: 24 January 2012

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Ohmic contacts to GaAs/AlGaAs core/shell nanowires are prepared by using a Ni/AuGe/Ni/Au layer system. In contrast to Ohmic contacts to planar GaAs/AlGaAs layer systems here, relatively low alloying temperatures are used in cylindrical geometry. Lowest resistances are found for annealing temperatures of 320 °C and 340 °C. For annealing temperatures exceeding 360 °C, the nanowires degraded completely. Nanowires annealed under optimized conditions preserved their Ohmic characteristics even down to temperatures of 4 K.
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73.40.Ns Metal-nonmetal contacts
81.40.Gh Other heat and thermomechanical treatments

Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment

Rosa Ruggeri, Fortunato Neri, Antonella Sciuto, Vittorio Privitera, Corrado Spinella, and Giovanni Mannino

Appl. Phys. Lett. 100, 042104 (2012); http://dx.doi.org/10.1063/1.3679395 (3 pages)

Online Publication Date: 25 January 2012

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We investigated optical, structural, and chemical properties of SiOxNy layers irradiated by CW IR laser during a time lapse of few milliseconds. We observed tunable photoluminescence signal at room temperature in the range 750–950 nm, without Si/SiO2 phase separation, depending on the IR laser power irradiation. Furthermore, no photoluminescence signal was recorded when the IR laser power density was high enough to promote phase separation forming Si quantum dots. By chemical analysis the source of the luminescence signal has been identified in a change of silicon chemical environment induced by IR laser annealing inside the amorphous matrix.
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78.55.Qr Amorphous materials; glasses and other disordered solids
81.40.Gh Other heat and thermomechanical treatments
64.75.St Phase separation and segregation in thin films
68.55.aj Insulators
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Recoverable electrical transition in a single graphene sheet for application in nonvolatile memories

Chaoxing Wu, Fushan Li, Yongai Zhang, and Tailiang Guo

Appl. Phys. Lett. 100, 042105 (2012); http://dx.doi.org/10.1063/1.3680093 (4 pages) | Cited 2 times

Online Publication Date: 25 January 2012

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The electrical properties of a resistive-switching memory based on a single graphene sheet suspended on a patterned indium-tin-oxide electrode pair were investigated. Current-voltage measurements on the planar device showed a large ON/OFF ratio (∼106) and excellent retention ability in ambient conditions. Data storage of the device can be realized by applying voltage bias and rewritten after simple heat treatment. Switching mechanisms for the graphene-based memory device were found to be related to the local oxidation of graphene sheet at the graphene/electrode interface.
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73.61.Wp Fullerenes and related materials
81.05.ue Graphene
81.40.Gh Other heat and thermomechanical treatments
72.80.Vp Electronic transport in graphene

Single-photon generation from a nitrogen impurity center in GaAs

Michio Ikezawa, Yoshiki Sakuma, Liao Zhang, Yosinori Sone, Tatsuya Mori, Takenobu Hamano, Masato Watanabe, Kazuaki Sakoda, and Yasuaki Masumoto

Appl. Phys. Lett. 100, 042106 (2012); http://dx.doi.org/10.1063/1.3679181 (3 pages) | Cited 2 times

Online Publication Date: 25 January 2012

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We have demonstrated single-photon emission from a nitrogen luminescence center in GaAs. An inhomogeneously broadened luminescence band formed by localized centers was observed in the spectral range from 1480 meV to 1510 meV at 5 K in nitrogen delta-doped GaAs. Optical properties of the individual centers were investigated by steady-state and time-resolved micro photoluminescence. We have found that a bright luminescence center emits single photons with a radiative lifetime of 650 ps, which is much shorter than the lifetime of NN pairs in previous reports.
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78.55.Cr III-V semiconductors
61.72.S- Impurities in crystals
61.72.U- Doping and impurity implantation
61.72.uj III-V and II-VI semiconductors
78.47.jd Time resolved luminescence
71.55.Eq III-V semiconductors

Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO

Z. Zhang, K. E. Knutsen, T. Merz, A. Yu. Kuznetsov, B. G. Svensson, and L. J. Brillson

Appl. Phys. Lett. 100, 042107 (2012); http://dx.doi.org/10.1063/1.3679708 (3 pages) | Cited 4 times

Online Publication Date: 26 January 2012

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We used depth-resolved cathodoluminescence spectroscopy (DRCLS) to describe the strong dependence of Li acceptor formation on thermal treatment in Li-doped ZnO. Within a 500-600 °C annealing temperature range, subsequent quenching ZnO leaves Li as interstitial donors, resulting in low room temperature resistivity, while slow cooling in air allows these interstitials to fill Zn vacancies forming Li acceptors 3.0 eV below the conduction band edge. DRCLS reveals an inverse relationship between the optical emission densities of lithium on zinc sites versus zinc vacancy sites, demonstrating the time dependence of Li interstitials to combine with zinc vacancies in order to form substitutional Li acceptors.
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72.15.Jf Thermoelectric and thermomagnetic effects
78.60.Hk Cathodoluminescence, ionoluminescence
81.40.Gh Other heat and thermomechanical treatments
61.72.jj Interstitials
61.72.up Other materials

High-temperature thermoelectric properties of Cu1–xInTe2 with a chalcopyrite structure

Atsuko Kosuga, Theerayuth Plirdpring, Ryosuke Higashine, Mie Matsuzawa, Ken Kurosaki, and Shinsuke Yamanaka

Appl. Phys. Lett. 100, 042108 (2012); http://dx.doi.org/10.1063/1.3678044 (3 pages) | Cited 10 times

Online Publication Date: 27 January 2012

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We investigated the high-temperature thermoelectric properties of Cu1–xInTe2 (x = 0, 0.05, 0.1, 0.2) at 310–710 K. The electrical properties of this system were optimized by the presence of substoichiometric amounts of copper and additional phonon scattering by lattice defects and a secondary phase reduced the thermal conductivity of the system. The samples of Cu1–xInTe2 (x = 0, 0.05, 0.1, 0.2) all had dimensionless figures of merit in excess of 0.5 at 710 K with a maximum value of 0.54 for x = 0.1.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.80.Jc Other crystalline inorganic semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
72.20.Fr Low-field transport and mobility; piezoresistance

Lattice locations and properties of Fe in Co/Fe co-implanted ZnO

H. P. Gunnlaugsson, K. Johnston, T. E. Mølholt, G. Weyer, R. Mantovan, H. Masenda, D. Naidoo, S. Ólafsson, K. Bharuth-Ram, H. P. Gíslason, G. Langouche, M. B. Madsen, and the ISOLDE Collaboration

Appl. Phys. Lett. 100, 042109 (2012); http://dx.doi.org/10.1063/1.3679692 (4 pages) | Cited 1 time

Online Publication Date: 27 January 2012

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The lattice locations and electronic configurations of Fe in 57Co/57Fe implanted ZnO (to (5‐6) × 1014 Fe/cm−2) have been studied by 57Fe Mössbauer emission spectroscopy. The spectra acquired upon room temperature implantation show ∼20% of the probe atoms as Fe2+ on perturbed Zn sites and the remaining fraction as Fe2+ in damage sites of interstitial character. After annealing at 773 K, ∼20% remain on crystalline sites, while the damage fraction has partly disappeared and instead a ∼30% fraction occurs as high‐spin Fe3+, presumably in precipitates. This suggests that precipitation of Co/Fe in ZnO likely takes place at relatively low temperatures, thus explaining some of the discrepancies in the literature regarding magnetic properties of 3d metal‐doped ZnO.
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61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.72.jj Interstitials

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

M. Forster, E. Fourmond, F. E. Rougieux, A. Cuevas, R. Gotoh, K. Fujiwara, S. Uda, and M. Lemiti

Appl. Phys. Lett. 100, 042110 (2012); http://dx.doi.org/10.1063/1.3680205 (4 pages) | Cited 2 times

Online Publication Date: 27 January 2012

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We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is proportional to the hole density squared, which gives credit to latent defect models against defect reactions limited by the diffusion and trapping of oxygen dimers by boron atoms.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Cn Elemental semiconductors
81.10.Fq Growth from melts; zone melting and refining
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