APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 5 / SEMICONDUCTORS

Appl. Phys. Lett. 100, 052102 (2012); http://dx.doi.org/10.1063/1.3680564 (4 pages)

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

B. Jouault1, N. Camara1,2, B. Jabakhanji1, A. Caboni3, C. Consejo1, P. Godignon3, D. K. Maude4, and J. Camassel1

1L2C–UMR 5650 Université Montpellier 2/CNRS, 34095 Montpellier cedex 5, France
2GREMAN, UMR 7347, Université de Tours/CNRS, 16 rue Pierre et Marie Curie, 37071 Tours Cedex 2, France
3CNM-IMB-CSIC–Campus UAB 08193 Bellaterra, Barcelona, Spain
4Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 38042 Grenoble, France

View MapView Map

(Received 29 June 2011; accepted 10 January 2012; published online 30 January 2012)

We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal. The charge neutrality point is observed close to gate voltage zero, and graphene can be populated by either holes or electrons down to low temperature (1.5 K). The hole concentration is hardly tuned by the gate voltage, possibly because of interface states below the Dirac point. A remarkably large quantum Hall plateau is observed for electrons.

© 2012 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

graphene, interface states, quantum Hall effect, silicon compounds, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3680564

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    I. Deretzis and A. La Magna, Appl. Phys. Lett. 98(2), 023113 (2011)APPLAB000098000002023113000001.

    N. Camara, J. R. Huntzinger, G. Rius, A. Tiberj, N. Mestres, F. Perez-Murano, P. Godignon, and J. Camassel, Phys. Rev. B 80(12), 125410 (2009).

    N. Camara, B. Jouault, A. Caboni, B. Jabakhanji, W. Desrat, E. Pausas, C. Consejo, N. Mestres, P. Godignon, and J. Camassel, Appl. Phys. Lett. 97(9), 093107 (2010)APPLAB000097000009093107000001.

    N. Camara, J.-R. Huntzinger, G. Rius, A. Tiberj, N. Mestres, F. Perez-Murano, P. Godignon, and J. Camassel, Phys. Rev. B 80(12), 125410 (2009).

    L. Magaud, F. Hiebel, F. Varchon, P. Mallet, and J. Y. Veuillen, Phys. Rev. B 79(16), 161405 (2009).


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC
  2. Beam-scanning planar lens based on graphene
  3. Transmission enhancement in a non-adiabatic tapered nano-aperture waveguide
  4. Spin transport in memristive devices
  5. Temperature dependence of microwave voltage emission associated to spin-transfer induced vortex oscillation in magnetic tunnel junction
Go to AIP Home
Copyright © American Institute of Physics
close