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Applied Physics Letters / Volume 100 / Issue 5 / SEMICONDUCTORS

Appl. Phys. Lett. 100, 052109 (2012); http://dx.doi.org/10.1063/1.3681373 (3 pages)

Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN

N. Ma1, B. Shen1, L. W. Lu1, F. J. Xu1, L. Guo1, X. Q. Wang1, F. Lin1, Z. H. Feng2, S. B. Dun2, and B. Liu2

1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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(Received 30 September 2011; accepted 12 January 2012; published online 1 February 2012)

The influence of the channel geometry on the high-field electron transport properties has been investigated in n-type GaN at room temperature. It is found that electrons in narrow channels drift much faster than those in wide channels. This discrepancy is attributed to the boundary-enhanced momentum relaxation of longitudinal optical (LO) phonons, which increases the electron drift velocity through enhancing the electron energy dissipation while weakening the momentum relaxation. In narrow channels, the effective LO-phonon momentum relaxation time is about ∼0.67 ps. The suggested theoretical analysis coincides well with the important features of the experimental results.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

Boltzmann equation, gallium compounds, III-V semiconductors, MOCVD, phonons, semiconductor epitaxial layers, wide band gap semiconductors

PACS

  • 63.20.D-

    Phonon states and bands, normal modes, and phonon dispersion

  • 68.55.ag

    Semiconductors

  • 73.61.Ey

    III-V semiconductors

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

International Patent Classification (IPC)

  • C23C16/18

    From metallo-organic compounds

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3681373

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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