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Applied Physics Letters / Volume 100 / Issue 5 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 053101 (2012); http://dx.doi.org/10.1063/1.3679127 (3 pages)

Room-temperature single molecular memory

Shinya Kano1,2, Yasuyuki Yamada3,2, Kentaro Tanaka4,2, and Yutaka Majima1,2,5

1Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2CREST, Japan Science and Technology Agency, Yokohama 226-8503, Japan
3Research Center for Materials Science, Nagoya University, Nagoya 464-8602, Japan
4Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya 464-8602, Japan
5Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, South Korea

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(Received 21 October 2011; accepted 7 November 2011; published online 30 January 2012)

Single molecular memory operation was observed on a porphyrin derivative by scanning tunneling microscopy at room temperature. A porphyrin derivative with four disulfide groups was chemically synthesized and chemisorbed on a Au(111) surface. Coulomb blockade behaviors and switching behaviors in current-voltage (I-V) characteristics were observed on a single porphyrin derivative by scanning tunneling spectroscopy. Based on the switching behaviors, the memory operation of electrical conductance in the porphyrin derivative was demonstrated by applying a programmed pulse sequence with an on/off ratio of 2.9 at room temperature.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

chemisorption, Coulomb blockade, electrical conductivity, gold, molecular electronics, organic compounds, scanning tunnelling microscopy

PACS

International Patent Classification (IPC)

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

  • H04N5/907

    Using static stores, e.g. storage tubes, semiconductor memories

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679127

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    Y. Wakayama, T. Kubota, H. Suzuki, T. Kamikado, and S. Mashiko, J. Appl. Phys. 94, 4711 (2003)JAPIAU000094000007004711000001.

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    H. Zhang, Y. Yasutake, Y. Shichibu, T. Teranishi, and Y. Majima, Phys. Rev. B 72, 205441 (2005).


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