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Applied Physics Letters / Volume 100 / Issue 5 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 053107 (2012); http://dx.doi.org/10.1063/1.3679136 (3 pages)

Position-controlled [100] InP nanowire arrays

Jia Wang1, Sébastien Plissard1, Moïra Hocevar2, Thuy T. T. Vu1, Tilman Zehender1, George G. W. Immink3, Marcel A. Verheijen1,3, Jos Haverkort1, and Erik P. A. M. Bakkers1,2

1Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
3Philips Innovation Services Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands

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(Received 25 November 2011; accepted 4 January 2012; published online 30 January 2012)

We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

arrays, electron beam lithography, etching, III-V semiconductors, indium compounds, micro-optics, MOCVD, nanofabrication, nanowires, photoluminescence, scanning electron microscopy, semiconductor growth, transmission electron microscopy, vapour phase epitaxial growth

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 61.46.Km

    Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

  • 78.67.Uh

    Nanowires

  • 78.55.Cr

    III-V semiconductors

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C09K11/00

    Luminescent, e.g. electroluminescent, chemiluminescent, materials

  • C23C16/18

    From metallo-organic compounds

  • C30B23/02

    Epitaxial-layer growth

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

  • C30B25/02

    Epitaxial-layer growth

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3679136

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    Z. Ikonic, G. P. Srivastava, and J. C. Inkson, Phys. Rev. B 52, 14078 (1995).

    U. Krishnamachari, M. Borgstrom, B. J. Ohlsson, N. Panev, L. Samuelson, W. Seifert, M. W. Larsson, and L. R. Wallenberg, Appl. Phys. Lett. 85, 2077 (2004)APPLAB000085000011002077000001.

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