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Applied Physics Letters / Volume 100 / Issue 5 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 053114 (2012); http://dx.doi.org/10.1063/1.3681375 (4 pages)

Mapping the electronic properties of individual graphene grain boundaries

Levente Tapasztó1,2, Péter Nemes-Incze1,2, Gergely Dobrik1,2, Kwon Jae Yoo2,3, Chanyong Hwang2,3, and László P Biró1,2

1Research Institute for Technical Physics and Materials Science, P.O. Box 49, 1525 Budapest, Hungary
2Korea-Hungary Joint Laboratory for Nanosciences, P.O. Box 49, 1525 Budapest, Hungary
3Center for Advanced Instrumentation, Division of Industrial Metrology, Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340, South Korea

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(Received 9 November 2011; accepted 12 January 2012; published online 1 February 2012)

Grain boundaries, the characteristic topological defects of chemical vapor deposition grown graphene samples, are expected to substantially alter the electronic properties of the unperturbed graphene lattice. However, there is very little experimental insight into the underlying mechanisms. Here, we systematically map the electronic properties of individual graphene grain boundaries by scanning tunneling microscopy and spatially resolved tunneling spectroscopy measurements. The tunneling spectroscopy data reveal that the conductivity inside the boundaries is markedly suppressed for both electron and hole-type charge carriers. Furthermore, graphene grain boundaries can give rise to n-type inversion channels within the p-doped graphene sheets, forming p-n junctions with sharp interfaces on the nanometer scale. These properties persist for grain boundaries of various configurations and are robust against structural disorder.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

carrier mobility, chemical vapour deposition, electrical conductivity, grain boundaries, graphene, nanofabrication, nanostructured materials, p-n junctions, scanning tunnelling microscopy, two-dimensional hole gas

PACS

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 61.48.Gh

    Structure of graphene

  • 73.22.Pr

    Electronic structure of graphene

  • 61.72.Mm

    Grain and twin boundaries

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C23C16/00

    Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3681375

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. Nemes-Incze, K. J. Yoo, L. Tapaszto, G. Dobrik, J. Labar, Z. E. Horvath, C. Hwang, and L. P. Biro, Appl. Phys. Lett. 99, 023104 (2011)APPLAB000099000002023104000001.

    L. Tapaszto, G. Dobrik, P. Nemes-Incze, G. Vertesy, P. Lambin, and L. P. Biro, Phys. Rev. B 78, 233407 (2008).

    J. Cervenka and C. F. J. Flipse, Phys. Rev. B 79, 195429 (2009).

    W. H. Brito, R. Kagimura, and R. H. Miwa, Appl. Phys. Lett. 98, 213107 (2011)APPLAB000098000021213107000001.

    G. Li, A. Luican, and E. Y. Andrei, Phys. Rev. Lett. 102, 176804 (2009).

    A. Deshpadne, W. Bao, F. Miao, C. N. Lau, and B. J. LeRoy, Phys. Rev. B 79, 205411 (2009).

    H. Cao, Y. Qingkai, L. A. Jauregui, J. Tian, W. Wu, Z. Liu, R. Jalilian, D. K. Benjamin, Z. Jiang, J. Bao et al., Appl. Phys. Lett. 96, 122106 (2010)APPLAB000096000012122106000001.

    Z. Wu, Appl. Phys. Lett. 98, 082117 (2011)APPLAB000098000008082117000001.


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