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Appl. Phys. Lett. 100, 053116 (2012); http://dx.doi.org/10.1063/1.3681398 (3 pages)

Angular distribution of field emitted electrons from vertically aligned carbon nanotube arrays

S. Iacobucci1, M. Fratini1, A. Rizzo2, F. Scarinci1, Y. Zhang3, M. Mann3, C. Li3,4, W. I. Milne3,5, M. M. El Gomati6, S. Lagomarsino7,8, and G. Stefani2

1CNR - Istituto Fotonica e Nanotecnologie, c/o Dipartimento di Fisica Università RomaTRE, via della Vasca Navale, 84-00146 Roma, Italy
2Dipartimento di Fisica Università RomaTRE, via della Vasca Navale, 84-00146 Roma, Italy
3Department of Engineering, Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom
4Department of Information Display, Kyung Hee University, Seoul 130-701, South Korea
5Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
6York Probe Sources Ltd, 23 Wydale Road, York YO10 3PG, United Kingdom
7CNR-IPCF, UOS di Roma, c/o Dipartimento di Fisica - Università “Sapienza,” P.le Aldo Moro, 2-00185 Roma, Italy
8Dipartimento di Fisica - Università “Sapienza,” P.le Aldo Moro, 2-00185 Roma, Italy

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(Received 28 October 2011; accepted 13 January 2012; published online 2 February 2012; corrected 4 May 2012)

Angular field emission (FE) properties of vertically aligned carbon nanotube arrays have been measured on samples grown by plasma enhanced chemical vapor deposition and characterized by scanning electron microscope and I-V measurements. These properties determine the angular divergence of electron beams, a crucial parameter in order to obtain high brilliance FE based cathodes. From angular distributions of the electron beam transmitted through extraction grids of different mesh size and by using ray-tracing simulations, the maximum emission angle from carbon nanotube tips has been determined to be about ± 30° around the tube main axis.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

PACS

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

  • 81.07.De

    Nanotubes

  • 73.63.Fg

    Nanotubes

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • C23C16/50

    Using electric discharges

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    C. A Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976)JAPIAU000047000012005248000001.

    C. Li, Y. Zhang, M. Mann, D. Hasko, W. Lei, B. Wang, D. Chu, D. Pribat, G. A. J. Amaratunga, and W. I. Milne, Appl. Phys. Lett. 97, 113107 (2010)APPLAB000097000011113107000001.

    N. de Jonge, J. Appl. Phys. 95, 673 (2004)JAPIAU000095000002000673000001.

    J.-M. Bonard, K. A. Dean, B. F. Coll, and C. Klinke, Phys. Rev. Lett. 89, 197602 (2002).


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