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Appl. Phys. Lett. 100, 053301 (2012); http://dx.doi.org/10.1063/1.3680253 (3 pages)

Short circuit current improvement in planar heterojunction organic solar cells by multijunction charge transfer

J. C. Wang1, S. Q. Shi1, C. W. Leung2, S. P. Lau2, K. Y. Wong3, and P. K. L. Chan1,4

1Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong
2Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
3Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong
4Department of Mechanical Engineering, The University of Hong Kong, Hong Kong

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(Received 5 November 2011; accepted 4 January 2012; published online 30 January 2012)

A multijunction structure was applied on an organic photovoltaic (OPV) device for broadening the absorption spectrum and enhancing the power conversion efficiency through charge transfer process. By inserting the tris[4-(2-thienyl)]amine (TTPA) into a boron subphthalocyanine chloride (SubPc)/C60 OPV device, the short circuit current density (Jsc) showed a 47.5% increases from 3.05 to 4.50 mA/cm2 in the bilayer planar heterojunction device, while the open circuit voltage (Voc) remained constant. Based on the single junction (TTPA/SubPc) device and photoluminescence absorption results, we confirmed both TTPA/SubPc and SubPc/C60 junctions are contributing to the exciton dissociation process hence the efficiency enhancement.

© 2012 American Institute of Physics

KEYWORDS, PACS, and IPC

PACS

International Patent Classification (IPC)

  • H01L27/142

    Energy conversion devices

  • H01L31/04

    Adapted as conversion devices

  • H02N6/00

    Generators in which light radiation is directly converted into electrical energy

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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Figures (click on thumbnails to view enlargements)

FIG.1
(Color online) (a) The schematic diagram of the multijunction device and the corresponding energy diagram. (b) The J-V curves multijunction device with the TTPA layer: ITO/PEDOT:PSS/TTPA(20 nm)/SubPc(13 nm)/C60(32.5 nm)/BCP(10 nm)/Ag(100 nm) and single junction reference device without the TTPA layer: ITO/PEDOT:PSS/SubPc(13 nm)/C60(32.5 nm)/BCP(10 nm)/Ag(100 nm).

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(Color online) (a) The absorbance profiles of the complete active layers comparing with the reference and the EQE of the multijunction device in comparing with reference device. (b) The PL of the organic semiconductor films for a pump wavelength of 340 nm at room temperature.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(Color online) (a) The performance of TTPA/SubPc bilayer device with inserted a schematic diagram of structure (ITO/PEDOT:PSS/TTPA(20 nm)/SubPc(13 nm)/BCP(10 nm)/Ag(100 nm)). (b) The relative value of the emission of TTPA film and the absorbance of SubPc film. (c) The schematic diagram for improvement of photon response by direct charge transfer.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Supplemental Files (EPAPS)



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