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Applied Physics Letters / Volume 100 / Issue 5 / ENERGY CONVERSION AND STORAGE

Appl. Phys. Lett. 100, 053901 (2012); http://dx.doi.org/10.1063/1.3681397 (3 pages)

High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

D. Shahrjerdi1, S. W. Bedell1, C. Ebert2, C. Bayram1, B. Hekmatshoar1, K. Fogel1, P. Lauro1, M. Gaynes1, T. Gokmen1, J. A. Ott1, and D. K. Sadana1

1IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
2Veeco Corporation, Somerset, New Jersey 08873, USA

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(Received 14 December 2011; accepted 12 January 2012; published online 2 February 2012)

In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The structural and electrical properties of the thin-film tandem cells were examined and compared against those on the original bulk Ge substrate. The comparison of the electrical data suggests the equivalency in cell parameters for both the thin-film (spalled) and bulk (non-spalled) cells, confirming that the controlled spalling technology does maintain the integrity of all layers in such an elaborate solar cell structure.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

gallium arsenide, gallium compounds, germanium, III-V semiconductors, indium compounds, semiconductor thin films, solar cells

PACS

International Patent Classification (IPC)

  • H01L27/142

    Energy conversion devices

  • H01L31/04

    Adapted as conversion devices

  • H02N6/00

    Generators in which light radiation is directly converted into electrical energy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3681397

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    L. C. Wang, P. H. Hao, and B. J. Wu, Appl. Phys. Lett. 67, 509 (1995)APPLAB000067000004000509000001.


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