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30 Jan 2012

Volume 100, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 100, 053101 (2012); http://dx.doi.org/10.1063/1.3679127 (3 pages)

Shinya Kano, Yasuyuki Yamada, Kentaro Tanaka, and Yutaka Majima
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High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. A. Ott, and D. K. Sadana

Appl. Phys. Lett. 100, 053901 (2012); http://dx.doi.org/10.1063/1.3681397 (3 pages) | Cited 5 times

Online Publication Date: 2 February 2012

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In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The structural and electrical properties of the thin-film tandem cells were examined and compared against those on the original bulk Ge substrate. The comparison of the electrical data suggests the equivalency in cell parameters for both the thin-film (spalled) and bulk (non-spalled) cells, confirming that the controlled spalling technology does maintain the integrity of all layers in such an elaborate solar cell structure.
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88.40.hj Efficiency and performance of solar cells
88.40.jm Thin film III-V and II-VI based solar cells
68.55.ag Semiconductors
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Suppressed indium diffusion and enhanced absorption in InGaAs/GaAsP stepped quantum well solar cell

Yu Wen, Yunpeng Wang, and Yoshiaki Nakano

Appl. Phys. Lett. 100, 053902 (2012); http://dx.doi.org/10.1063/1.3681785 (3 pages)

Online Publication Date: 3 February 2012

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A multiple stepped quantum well (MSQW) structure, in which GaAs step layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, has been proposed and improvements in sub-GaAs-bandgap QE have been demonstrated. We have studied the effect of indium diffusion on the optical properties in quantum well solar cell by measuring the absorptance and photoluminescence spectra. Theoretical calculations indicate that the transition energy level and the absorption magnitude are sensitive to indium diffusion. The MSQW structure with GaAs step layer is a feasible way to suppress indium diffusion and enhance the absorption.
Show PACS
88.40.jm Thin film III-V and II-VI based solar cells
88.40.hj Efficiency and performance of solar cells
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