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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061102 (2012); http://dx.doi.org/10.1063/1.3682082 (4 pages)

Terahertz magnetic field induced coherent spin precession in YFeO3

Runze Zhou1, Zuanming Jin1, Gaofang Li1, Guohong Ma1, Zhenxiang Cheng2, and Xiaolin Wang2

1Department of Physics, Shanghai University, 99 Shangda Road, Shanghai 200444, People’s Republic of China
2Institute for Superconductor and Electronic Materials, Faculty of Engineering, University of Wollongong, Squires Way, North Wollongong, New South Wales 2500, Australia

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(Received 2 December 2011; accepted 15 January 2012; published online 6 February 2012)

We present the magnetic dipole transition at 0.299 THz excited by magnetic component of terahertz electromagnetic pulse in an antiferromagnetic YFeO3 crystal. The impulsive magnetic field of the terahertz pulse tilts the macroscopic magnetization, causing deviation from the equilibrium position, which is manifested by a sharp absorption at the frequency of the quasiferromagnetic mode of the crystal. The rotating coherent macroscopic magnetization radiates elliptically polarized emission at the frequency of the quasiferromagnetic resonance due to the dichroic absorption in the crystal.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

antiferromagnetic materials, dichroism, ferromagnetic materials, magnetic moments, magnetic transitions, magnetisation, yttrium compounds

PACS

  • 75.60.Ej

    Magnetization curves, hysteresis, Barkhausen and related effects

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 78.20.Fm

    Birefringence

  • 75.30.Cr

    Saturation moments and magnetic susceptibilities

  • 75.30.Kz

    Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

  • 75.50.Ee

    Antiferromagnetics

International Patent Classification (IPC)

  • H01F1/00

    Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties

  • H01F13/00

    Apparatus or processes for magnetising or demagnetising

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3682082

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. Stanciu, F. Hansteen, A. V. Kimel, A. Kirilyuk, A. Tsukamoto, A. Itoh, and Th. Rasing, Phys. Rev. Lett. 90, 047601 (2007).

    C. Bunce, J. Wu, G. Ju, B. Lu, D. Hinzke, N. Kazantseva, U. Nowak, and R. W. Chantrell, Phys. Rev. B 87, 174428 (2010).

    A. Kirilyuk, A. V. Kimel, and Th. Rasing, Rev. Mod. Phys. 82, 2731 (2010).

    Z. M. Jin, H. Ma, H. Wang, G. H. Ma, F. Y. Guo, and J. Z. Chen, Appl. Phys. Lett. 96, 201108 (2010)APPLAB000096000020201108000001.

    Z. M. Jin, H. Ma, D. Li, G. H. Ma, M. Wang, and C. J. Zhao, J. Appl. Phys. 109, 073109 (2011)JAPIAU000109000007073109000001.

    G. H. Ma, D. Li, H. Ma, J. Ge, S. H. Hu, and N. Dai, Appl. Phys. Lett. 93, 211101 (2008)APPLAB000093000021211101000001.

    A. P. Heberle, J. J. Baumber, and K. Kohler, Phys. Rev. Lett. 75, 2598 (1995).

    T. Satoh, N. P. Duong, and M. Fiebig, Phys. Rev. B 74, 012404 (2006).


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