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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061104 (2012); http://dx.doi.org/10.1063/1.3682307 (3 pages)

Ultraviolet electroluminescence from colloidal ZnO quantum dots in an all-inorganic multilayer light-emitting device

T. Omata1, Y. Tani2, S. Kobayashi2, K. Takahashi1, A. Miyanaga1, Y. Maeda1, and S. Otsuka-Yao-Matsuo1

1Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita 565-0871, Japan
2R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan

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(Received 16 October 2011; accepted 15 January 2012; published online 6 February 2012)

We report ultraviolet (UV) electroluminescence (EL) at 3.30 eV of colloidal ZnO quantum dots (QDs) in an inorganic multilayer thin-film EL device. The EL spectrum was identical to the photoluminescence spectrum of the source solution of ZnO QDs, and the emission is attributable to quantum confined electron hole pair recombination. The UV emission was successful when the ZnO QD layer was sandwiched by thin MgO layers, while only a defect-related visible emission appeared without MgO layers. The type-I quantum well structure of MgO/ZnO/MgO and surface passivation of ZnO QDs by MgO must be important for the UV EL emission.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

colloids, electroluminescence, electron-hole recombination, II-VI semiconductors, light emitting diodes, multilayers, passivation, photoluminescence, sandwich structures, semiconductor quantum dots, semiconductor quantum wells, semiconductor thin films, thin film devices, ultraviolet spectra, wide band gap semiconductors

PACS

International Patent Classification (IPC)

  • B32B

    Layered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3682307

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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