Electrically driven nanopyramid green light emitting diode

Chang, S.-P.; Chen, Y.-C.; Huang, J.-K.; Cheng, Y.-J.; Chang, J.-R.; Sou, K.-P.; Kang, Y.-T.; Yang, H.-C.; Hsu, T.-C.; Kuo, H.-C.; Chang, C.-Y.

doi:doi:10.1063/1.3681363

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Analysis of Gouy phase shift for optimizing terahertz air-biased-coherent-detection

Terahertz (THz) air-biased-coherent-detection (ABCD) uses a local oscillator to enhance THz-wave detection sensitivity by mixing an optical field, a THz field, and a biased electric field (local oscillator) in air. The width of the electrodes providing the local oscillator, the longitudinal distribution of the optical and THz waves, both play important roles in the overall detection sensitivity. By analyzing the effect of the Gouy phase shift on the electric field distribution at the mixing loc...

ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes

One-dimensional and two-dimensional hybrid structures, composed of vertical ZnO nanorods grown on large-area graphene, are successfully integrated onto the GaN/InGaN light emitting diodes (LEDs). Compared with GaN LED without transparent conducting electrode, current injection and light emission increased almost 2–3 times, respectively, by the introduction of graphene based conducting electrode. Additional ∼66% increase in light emission was achieved by growing the ZnO nanorods on the graphene,...

An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells were selectively grown on the facets of the nanopyramids. The fabricated LED emits green wavelength under electrical injection. The emission exhibits a less carrier density dependent wavelength shift and higher internal quantum efficiency as compared with a reference c-plane sample at the same wavelength. It shows a promising potential for using nanopyramid in high In content LED applications.

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KEYWORDS, PACS, and IPC

Keywords

carrier density, gallium compounds, III-V semiconductors, light emitting diodes, MOCVD, nanofabrication, passivation, photoluminescence, semiconductor growth, semiconductor quantum wells, vapour phase epitaxial growth

PACS

85.60.Jb

Light-emitting devices

International Patent Classification (IPC)

B82B3/00
Manufacture or treatment of nano-structures
C23C16/18
From metallo-organic compounds
C30B23/02
Epitaxial-layer growth
C30B25/00
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
C30B25/02
Epitaxial-layer growth
H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
H01L27/15
Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L33/00
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3681363

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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