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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061107 (2012); http://dx.doi.org/10.1063/1.3683484 (5 pages)

ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes

Jung Min Lee1, Jaeseok Yi1, Won Woo Lee1, Hae Yong Jeong1, Taeil Jung2, Youngchae Kim2, and Won Il Park1

1Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
2Optical Technology (R&D Center, LG Display Co., Ltd.), Gyeonggi-do 413-811, Korea

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(Received 30 November 2011; accepted 18 January 2012; published online 7 February 2012)

One-dimensional and two-dimensional hybrid structures, composed of vertical ZnO nanorods grown on large-area graphene, are successfully integrated onto the GaN/InGaN light emitting diodes (LEDs). Compared with GaN LED without transparent conducting electrode, current injection and light emission increased almost 2–3 times, respectively, by the introduction of graphene based conducting electrode. Additional ∼66% increase in light emission was achieved by growing the ZnO nanorods on the graphene, which is consistent with the finite difference time domain modeling result. Furthermore, electroluminescence intensity profiles confirm the uniform light emission with high brightness in GaN LED with the ZnO nanorods-graphene hybrid electrode.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

brightness, electroluminescence, finite difference time-domain analysis, gallium compounds, graphene, II-VI semiconductors, indium compounds, light emitting diodes, nanorods, wide band gap semiconductors, zinc compounds

PACS

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • H01L27/15

    Including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

  • H01L33/00

    Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission, e.g. infra-red; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3683484

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Huh, K.-S. Lee, E.-J. Kang, and S.-J. Park, J. Appl. Phys. 93, 9383 (2003)JAPIAU000093000011009383000001.

    T. S. Kim, S.-M. Kim, Y. H. Jang, and G. Y. Jung, Appl. Phys. Lett. 91, 171114 (2007)APPLAB000091000017171114000001.

    J. M. Lee, H. Y. Jeong, K. J. Choi, and W. I. Park, Appl. Phys. Lett. 99, 041115 (2011)APPLAB000099000004041115000001.

    S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, Appl. Phys. Lett. 92, 121108 (2008)APPLAB000092000012121108000001.

    K. Dai, C. B. Soh, S. J. Chua, L. Wang, and D. Huang, J. Appl. Phys. 109, 083110 (2011)JAPIAU000109000008083110000001.

    K.-K. Kim, S.-D. Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W Kim, Appl. Phys. Lett. 94, 071118 (2009)APPLAB000094000007071118000001.

    M. Bruna and S. Borini, Appl. Phys. Lett. 94, 031901 (2009)APPLAB000094000003031901000001.


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