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Applied Physics Letters / Volume 100 / Issue 6 / PHOTONICS AND OPTOELECTRONICS

Appl. Phys. Lett. 100, 061109 (2012); http://dx.doi.org/10.1063/1.3683546 (3 pages)

Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction

Shiyang Zhu1, H. S. Chu2, G. Q. Lo1, P. Bai2, and D. L. Kwong1

1Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685
2Advanced Photonics and Plasmonics Group, A*STAR-Institute of High Performance Computing, Singapore 138632

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(Received 8 December 2011; accepted 21 January 2012; published online 7 February 2012)

An all-silicon photodetector integrated in a silicon-on-insulator waveguide for the telecom regime is proposed. The device is based on internal photoemission from electrically floating metal silicide nanoparticles (NPs) embedded in the space charge region of a Si p-n junction. Numerical simulation indicates that the light absorption could be enhanced if localized surface plasmon resonances are excited on the metal silicide nanoparticles, thus enabling to shrink the detector’s footprint to a submicron scale. A proof-of-concept detector fabricated using standard silicon complementary metal-oxide-semiconductor technology exhibits a peak responsivity of ∼30 mA/W at 5-V reverse bias and a 3-dB bandwidth of ∼6 GHz. It is expected that the overall performance would be significantly improved by optimization of both the detector’s configuration and the fabrication parameters.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

infrared detectors, integrated optics, nanoparticles, optical waveguides, p-n junctions

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 42.82.Et

    Waveguides, couplers, and arrays

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • G01J1/00

    Photometry, e.g. photographic exposure meter

  • G02B6/10

    Of the optical waveguide type

  • H01L31/101

    Devices sensitive to infra-red, visible or ultra-violet radiation

  • H04N5/33

    Transforming infra-red radiation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3683546

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Y. Zhu, M. B. Yu, G. Q. Lo, and D. L. Kwong, Appl. Phys. Lett. 92, 081103 (2008)APPLAB000092000008081103000001.

    R. W. Fathauer, J. M. Lannelli, C. W. Nieh, and S. Hashimoto, Appl. Phys. Lett. 57, 1419 (1990)APPLAB000057000014001419000001.

    R. W. Fathauer, S. M. Dejewski, T. George, E. W. Jones, T. N. Krabach, and A. Ksendzov, Appl. Phys. Lett. 62, 1774 (1993)APPLAB000062000015001774000001.

    M. Amiotti, A. Borghesi, G. Guizzetti, and F. Nava, Phys. Rev. B 42, 8939 (1990).

    J. Kim, C. S. Han, Y. C. Park, and W. A. Anderson, Appl. Phys. Lett. 92, 043501 (2008)APPLAB000092000004043501000001.


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